Ultra-highly linear Ga<sub>2</sub>O<sub>3</sub>-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system

Peng Li; Xuanyu Shan; Ya Lin; Yi Du; Jiangang Ma; Zhongqiang Wang; Xiaoning Zhao; Ye Tao; Haiyang Xu; Yichun Liu

doi:10.1038/s41377-025-01897-9

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Ultra-highly linear Ga₂O₃-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system

Original Articles

- Ultra-highly linear Ga₂O₃-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system
- Light: Science & Applications Vol. 14, Issue 11, Pages: 3703-3714(2025)
- Affiliations：
  
  Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China
- Author bio：
  
  Ya Lin (liny474@nenu.edu.cn)
  Zhongqiang Wang (wangzq752@nenu.edu.cn)
  Haiyang Xu (hyxu@nenu.edu.cn)
- Funds：
- DOI：10.1038/s41377-025-01897-9
  CLC：
- Received：19 November 2024，
  
  Revised：2025-05-08，
  
  Accepted：21 May 2025，
  
  Published Online：30 September 2025，
  
  Published：30 November 2025
- Accepted：
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Li, P. et al. Ultra-highly linear Ga₂O₃-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system. Light: Science & Applications, 14, 3703-3714 (2025).
DOI：

Li, P. et al. Ultra-highly linear Ga₂O₃-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system. Light: Science & Applications, 14, 3703-3714 (2025). DOI： 10.1038/s41377-025-01897-9.

摘要

Abstract

Ultrawide bandgap semiconductor optoelectronic synapses can perform high-parallel computing with a low false alarm rate

making them ideal for building deep-ultraviolet (DUV) neuromorphic visual system (NVS). However

the rapid carrier recombination in these optoelectronic synapses results in a poor number of conductance states and a low linear weight update protocol

consequently degrading the image recognition accuracy of DUV NVSs. This work proposes a type of cascade heterojunctions capable of finely tuning the dynamics of photogenerated carriers

utilizing aluminum interdigital electrodes sandwiched between tin-doped Ga

and oxygen-deficient hafnium oxide (GTO/Al/HfO

) films. The built-in fields at the GTO/HfO

heterojunction and the Al/HfO

hole Schottky junction interfaces facilitate the separation of photogenerated carriers and the subsequent trapping of holes by the oxygen defects in the HfO

respectively. The GTO/Al/HfO

optoelectronic synapses exhibit an ultrahigh responsivity of over 10

A/W and a large photo-to-dark current ratio of 6 × 10

which results in exceptional synaptic plasticity with unprecedented 4096 conductance states and excellent linearity with a fitting coefficient of 0.992. These attributes enable the GTO/Al/HfO

optoelectronic synapses to execute logical operations with fault-tolerance capability and to achieve high-accuracy fingerprint classification. The innovative cascade heterojunctions design

along with the elucidated carrier dynamics modulation mechanism

facilitates the development of DUV NVSs.

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references

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Ultra-highly linear Ga2O3-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system

DOI：10.1038/s41377-025-01897-9

摘要

Abstract

关键词

Keywords

references

Ultra-highly linear Ga₂O₃-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system