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1.Electronic Information School, Wuhan University, Wuhan 430072, China
2.Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
3.Wuhan Institute of Quantum Technology, Wuhan 430206, China
Qinghua Song (song.qinghua@sz.tsinghua.edu.cn)
Zhongyang Li (zhongyangli@whu.edu.cn)
Received:14 February 2025,
Revised:2025-06-15,
Accepted:06 July 2025,
Published Online:05 August 2025,
Published:30 September 2025
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Yi, C. et al. Creating topological exceptional point by on-chip all-dielectric metasurface. Light: Science & Applications, 14, 2764-2771 (2025).
Yi, C. et al. Creating topological exceptional point by on-chip all-dielectric metasurface. Light: Science & Applications, 14, 2764-2771 (2025). DOI: 10.1038/s41377-025-01955-2.
Classified as a non-Hermitian system
topological metasurface is one of the ideal platforms for exploring a striking property
that is
the exceptional point (EP). Recently
creating and encircling EP in metasurfaces has triggered various progressive functionalities
including polarization control and optical holographic encoding. However
existing topological metasurfaces mostly rely on plasmonic materials
which introduce inevitable ohmic losses and limit their compatibility with mainstream all-dielectric meta-devices. Additionally
conventional free-space configurations also hinder the integration of multiple meta-devices in compact platforms. Here
an on-chip topological metasurface is experimentally demonstrated to create and engineer the topological phase encircling the EP in all-dielectric architectur
e. By massively screening the Si meta-atom geometry on the Si
3
N
4
waveguide
a 2π-topological phase shift is obtained by encircling the EP. Through combining with the Pancharatnam-Berry (PB) phase
we decouple the orthogonal circular polarization channels and unfold the independent encoding freedom for different holographic generations. As a proof of concept
the proposed on-chip topological metasurface enables floating holographic visualizations in real-world scenarios
functioning as practical augmented reality (AR) functionalities. Such the all-dielectric on-chip scheme eliminates ohmic losses and enables compatible integration with other on-chip meta-devices
thus suggesting promising applications in next-generation AR devices
multiplexing information storage
and advanced optical displays.
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