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1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
2.Photonics Information Innovation Center and Hebei Provincial Center for Optical Sensing Innovations, College of Physics Science and Technology, Hebei University, Baoding 071002, China
3.NuVison Photonics, Inc., Las Vegas, NV 89109, USA
4.Hefei National Laboratory, Hefei 230088, China
X. Steve Yao (syao@ieee.org)
Peng Hao (haopeng@hbu.edu.cn)
Xinlun Cai (caixlun5@mail.sysu.edu.cn)
Received:06 December 2024,
Revised:2025-06-25,
Accepted:25 July 2025,
Published Online:11 December 2025,
Published:31 December 2025
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Ma, R. et al. V-band ultra-fast tunable thin-film lithium niobate Fourier-domain mode-locked optoelectronic oscillator. Light: Science & Applications, 14, 4204-4213 (2025).
Ma, R. et al. V-band ultra-fast tunable thin-film lithium niobate Fourier-domain mode-locked optoelectronic oscillator. Light: Science & Applications, 14, 4204-4213 (2025). DOI: 10.1038/s41377-025-01988-7.
We demonstrate the first Fourier-domain mode-locked optoelectronic oscillator (FDML OEO) fabricated on the thin-film lithium niobate (TFLN) platform
deploying an electrically tuned ultra-fast frequency-scanning filter
thanks to the high-speed Pockels effect in TFLN. Record-breaking high radiofrequency oscillations up to 65 GHz are achieved
with a phase noise more than 14 dB less at 50 GHz than that of a high-performance commercial signal source at an offset frequency of 10 kHz away from the carrier. A linearly chirped microwave waveform with an unprecedented scanning bandwidth of 30 GHz
corresponding to an impressive chirp rate of 5.7 GHz/μs and a large time-bandwidth product of 159054
is successfully generated by the FDML OEO. These results validate the feasibility of utilizing TFLN to fabricate integrated FDML OEOs capable of delivering ultra-wide scanning bandwidth at chirp rates and frequencies not attainable with any other approaches to date.
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