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1.School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, China
2.Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
3.Key Laboratory of Semiconductor Display Materials and Chips, SINANO, CAS, Suzhou 215123, China
4.Vacuum Interconnected Nanotech Workstation, SINANO, CAS, Suzhou 215123, China
5.Key Laboratory of Intelligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
6.Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
Yukun Zhao (ykzhao2017@sinano.ac.cn)
Jianya Zhang (jyzhang2022@usts.edu.cn)
Lifeng Bian (lfbian@fudan.edu.cn)
Shulong Lu (sllu2008@sinano.ac.cn)
Received:24 January 2025,
Revised:2025-07-17,
Accepted:25 July 2025,
Published Online:12 August 2025,
Published:31 October 2025
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Jiang, M. et al. A dual-mode transparent device for 360° quasi-omnidirectional self-driven photodetection and efficient ultralow-power neuromorphic computing. Light: Science & Applications, 14, 2936-2954 (2025).
Jiang, M. et al. A dual-mode transparent device for 360° quasi-omnidirectional self-driven photodetection and efficient ultralow-power neuromorphic computing. Light: Science & Applications, 14, 2936-2954 (2025). DOI: 10.1038/s41377-025-01991-y.
Due to the extremely high manufacturing standards
the integration of quasi-omnidirectional photodetectors and synaptic devices within a single device remains a long-standing challenge. In this work
we have designed a graphene/(Al
Ga)N nanowire heterojunction
demonstrating the monolithic integration of self-driven 360° photodetectors and artificial synapses in a dual-mode transparent device successfully. By manipulating the carrier transport dynamics through controlling the bias voltage
the degree of oxygen vacancy ionization can be precisely regulated
ultimately realizing the monolithic dual-mode device. At 0 V bias
the device functions as a fast-response self-driven photodetector with
stable optical communication capabilities
achieving 360° quasi-omnidirectional photodetection. Upon applying a bias voltage
the operating mode switches to a synaptic device
which successfully simulates brain-like paired-pulse facilitation
short-/long-term plasticity processes
and learning/forgetting behaviors. The device demonstrates an exceptionally high UV/visible rejection ratio of 1.29 × 10
4
coupled with an ultra-low dark current of less than 1 pA. Furthermore
this device has a low power consumption of 2.5 × 10
−14
J per synaptic event
indicating an energy efficiency comparable to synaptic processes in the human brain. Moreover
nonlinear photoconductivity lets the device become a neuromorphic sensor for preprocessing images
enhancing recognition accuracy. Importantly
by leveraging the long-memory characteristic of the devices in open-circuit voltage mode
the devices have been successfully applied to guide humanoid robots in performing direction distinguishing and motion learning. This work provides new insights into the integrated manufacturing of multifunctional monolithic devices and foresees their immense potential in upcoming advanced
low-power neuromorphic computing systems.
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