Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications

Xingfa Gao; Yuzhen Huang; Rixuan Wang; Yinglun Sun; Lai Wang

doi:10.1038/s41377-025-02052-0

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Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications

Review

- Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications
- Light: Science & Applications Vol. 15, Issue 5, Pages: 1419-1439(2026)
- Affiliations：
  
  1.Institute of Medical Engineering and Interdisciplinary Research, Medical Science and Technology Innovation Center, Shandong First Medical University & Shandong Academy of Medical Sciences, 250117 Jinan, China
  2.Medical Engineering and Technology Research Center, School of Radiology, Shandong First Medical University & Shandong Academy of Medical Sciences, 271016 Taian, China
  3.State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies, and Department of Electronic Engineering, Tsinghua University, 100084 Beijing, China
- Author bio：
  
  Yinglun Sun (sunyinglun@sdfmu.edu.cn)
  Lai Wang (wanglai@tsinghua.edu.cn)
- Funds：
- DOI：10.1038/s41377-025-02052-0
  CLC：
- Received：25 March 2025，
  
  Revised：2025-09-09，
  
  Accepted：15 September 2025，
  
  Online First：03 March 2026，
  
  Published：31 May 2026
- Accepted：
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Gao, X. F. et al. Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications. Light: Science & Applications, 15, 1419-1439 (2026).
DOI：

Gao, X. F. et al. Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications. Light: Science & Applications, 15, 1419-1439 (2026). DOI： 10.1038/s41377-025-02052-0.

摘要

Abstract

The rapid evolution of wearable technology

interconnected devices

and medical devices is driving innovation in advanced materials for flexible optoelectronics. Ⅲ-nitride semiconductors

with their exceptional optoelectronic properties

strong piezotronic and piezo-phototronic effects

biocompatibility

and thermal/chemical/mechanical stability

present a compelling alternative to traditional organic and Si-based inorganic materials. Despite significant research efforts

a systematic review summarizing the advancements and challenges in Ⅲ-nitride flexible optoelectronics is lacking. This article provides a comprehensive overview of recent developments in this field. It begins by highlighting the advantages of Ⅲ-nitride semiconductors for flexible optoelectronics. The article then discusses the fabrication techniques for Ⅲ-nitride flexible devices

covering materials growth

film exfoliation and transfer

as well as functional micro/nanostructures. A wide range of flexible applications of Ⅲ-nitrides are explored

including flexible displays

implantable optogenetic devices

wearable photodetectors

and flexible mechanical sensors. Finally

challenges and potential solutions related to device fabrication

performance enhancement

theoretical modeling

and system integration are discussed. This work serves as a foundational reference and roadmap for further advancements in Ⅲ-nitride flexible optoelectronics.

关键词

Keywords

references

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