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1.École Polytechnique Fédérale de Lausanne, Photonic Systems Laboratory (PHOSL), Lausanne, Switzerland
2.École Polytechnique Fédérale de Lausanne, Laboratory of Photonics and Quantum Measurements (LPQM), Lausanne, Switzerland
3.Dipartimento di Fisica "A. Volta", Universitá di Pavia, Pavia, Italy
Camille-Sophie Brès (camille.bres@epfl.ch)
Received:30 April 2025,
Revised:2026-01-16,
Accepted:01 February 2026,
Online First:28 February 2026,
Published:31 May 2026
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Wang, G. et al. Integrated tunable green light source on silicon nitride. Light: Science & Applications, 15, 1523-1531 (2026).
Wang, G. et al. Integrated tunable green light source on silicon nitride. Light: Science & Applications, 15, 1523-1531 (2026). DOI: 10.1038/s41377-026-02222-8.
Integrated green light sources are essential for telecommunications and quantum applications
while the performance of current on-chip green light generation is still limited in power and tunability. In this work
we demonstrate green light generation in silicon nitride microresonators using photo-induced second-order nonlinearities
achieving up to 3.5 mW green power via second-harmonic generation and densely tunable over a 29 nm range. In addition
we report milliwatt-level all-optical poling (AOP) threshold
allowing for amplifier-free continuous-wave AOP. Furthermore
we demonstrate non-cascaded sum-frequency generation
leveraging the combination of AOP and simultaneous coherent frequency combs generation at 1
μ
m. Such comb-assisted AOP enables switching of the green light generation over an 11 nm range while maintaining the pump within a single resonance. The combination of such highly efficient photo-induced nonlinearity and multi-wavelength AOP enables the realization of low-threshold
high-power
widely-tunable on-chip green sources.
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