High efficiency, high color purity red micro-light-emitting diodes

Yuanpeng Wu; Yixin Xiao; Maddaka Reddeppa; Yakshita Malhotra; Yifu Guo; Jianyang Xiao; Jiangnan Liu; Danhao Wang; Kai Sun; Zetian Mi

doi:10.1038/s41377-026-02227-3

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High efficiency, high color purity red micro-light-emitting diodes

Original Articles

- High efficiency, high color purity red micro-light-emitting diodes
- Light: Science & Applications Vol. 15, Issue 5, Pages: 1532-1540(2026)
- Affiliations：
  
  1.Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
  2.Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA
- Author bio：
  
  Yuanpeng Wu (ypwu@umich.edu)
  Zetian Mi (ztmi@umich.edu)
- Funds：
- DOI：10.1038/s41377-026-02227-3
  CLC：
- Received：26 May 2025，
  
  Revised：2026-01-23，
  
  Accepted：04 February 2026，
  
  Online First：28 February 2026，
  
  Published：31 May 2026
- Accepted：
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Wu, Y. P. et al. High efficiency, high color purity red micro-light-emitting diodes. Light: Science & Applications, 15, 1532-1540 (2026).
DOI：

Wu, Y. P. et al. High efficiency, high color purity red micro-light-emitting diodes. Light: Science & Applications, 15, 1532-1540 (2026). DOI： 10.1038/s41377-026-02227-3.

摘要

Abstract

InGaN-based micro-light-emitting diodes (micro-LEDs) are emerging to revolutionize the display and lighting technologies

particularly for their excellent robustness

high brightness

high efficiency and small pixel size. Despite the success of blue LEDs

long-wavelength emission

particularly the red emission

has been a challenge for InGaN-based micro-LEDs. Overcoming the low quantum efficiency

color instability

and broad emission in the red wavelength regime are among the most urgent and critical problems that inhibit the commercial implementation of micro-LED technology. In this work

we utilize a nanowire photonic crystal (PhC) structure to reform the radiation behavior of red-emitting InGaN micro-LEDs. Through detailed optimization on the PhC design and device fabrication

we demonstrate red-emitting micro-LEDs with a peak wavelength at 617 nm and a full-width-at-half-maximum (FWHM) of 5 nm

which is about one order of magnitude narrower than previous reported values and is paramount for achieving high color purity. The chromaticity property is highly stable with varying injection currents due to the coupling of emission to photonic band edge mode. A high external quantum efficiency of over 10% was measured from micro-LEDs with a size of 1 µm

. This work provides a vital strategy for high-performance red-emitting micro-LEDs and a potential pathway for full-color micro-LED technology by using all Ⅲ-nitride semiconductors.

关键词

Keywords

references

Lin, C. C. et al. The micro-LED roadmap: status quo and prospects. J. Phys. Photonics 5 , 042502 (2023)..

Behrman, K. & Kymissis, I. Micro light-emitting diodes. Nat. Electron. 5 , 564–573 (2022)..

Chen, Z., Yan, S. K. & Danesh, C. MicroLED technologies and applications: characteristics, fabrication, progress, and challenges. J. Phys. D: Appl. Phys. 54 , 123001 (2021)..

Ryu, J. E. et al. Technological breakthroughs in chip fabrication, transfer, and color conversion for high-performance micro-LED displays. Adv. Mater. 35 , 2204947 (2023)..

Hsiang, E. L. et al. Prospects and challenges of mini-LED, OLED, and micro-LED displays. J. Soc. Inf. Disp. 29 , 446–465 (2021)..

Huang, Y. G. et al. Mini-LED, micro-LED and OLED displays: present status and future perspectives. Light Sci. Appl. 9 , 105 (2020)..

Lin, J. Y. & Jiang, H. X. Development of microLED. Appl. Phys. Lett. 116 , 100502 (2020)..

Rashid i, A. et al. High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth. IEEE Photonics Technol. Lett. 32 , 383–386 (2020)..

Baek, W. J. et al. Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay. Nat. Commun. 14 , 1386 (2023)..

Wang, L. et al. Green InGaNquantum dots breaking through efficiency and bandwidth bottlenecks of micro-LEDs. Laser Photonics Rev. 15 , 2000406 (2021)..

Wu, Y. P. et al. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering. Light Sci. Appl. 11 , 294 (2022)..

Xiao, Y. X. et al. Spectrally pure, high operational dynamic range, deep red micro-LEDs. Nano Lett. 24 , 12900–12906 (2024)..

Chen, Z. Y. et al. High-efficiency InGaN red mini-LEDs on sapphire toward full-color nitride displays: effect of strain modulation. Adv. Funct. Mater. 33 , 2300042 (2023)..

Wang, X. L. et al. 3.5 × 3.5 μm 2 GaN blue m icro-light-emitting diodes with negligible sidewall surface nonradiative recombination. Nat. Commun. 14 , 7569 (2023)..

Li, P. P. et al. Significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes with a peak external quantum efficiency of up to 6%. ACS Photonics 10 , 1899–1905 (2023)..

Wong, M. S. et al. Size-independent peak efficiency of Ⅲ-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation. Appl. Phys. Express 12 , 097004 (2019)..

Pandey, A. et al. A red-emitting micrometer scale LED with external quantum efficiency > 8%. Appl. Phys. Lett. 122 , 151103 (2023)..

Wong, M. S. et al. High efficiency ofⅢ-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Opt. Express 26 , 21324–21331 (2018)..

Wong, M. S. et al. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Opt. Express 28 , 5787–5793 (2020)..

Shin, J. et al. Vertical full-colour micro-LEDs via 2D materials-based layer trans fer. Nature 614 , 81–87 (2023)..

Sheen, M. et al. Highly efficient blue InGaN nanoscale light-emitting diodes. Nature 608 , 56–61 (2022)..

Meng, W. Q. et al. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix. Nat. Nanotechnol. 16 , 1231–1236 (2021)..

Zhao, X. Y. et al. Recent progress in long-wavelength InGaN light-emitting diodes from the perspective of epitaxial structure. Adv. Photonics Res. 4 , 2300061 (2023)..

Armitage, R. et al. True-red InGaN light-emitting diodes for display applications. Phys. Status Solidi RRL 18 , 2400012 (2024)..

Pandey, A. et al. An ultrahigh efficiency excitonic micro-LED. Nano Lett. 23 , 1680–1687 (2023)..

Zheng, X. et al. Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate. Appl. Phys. Lett. 124 , 051103 (2024)..

Wang, Z. et al. Re d, green and blue InGaN micro-LEDs for display application: temperature and current density effects. Opt. Express 30 , 36403–36413 (2022)..

Zhuang, Z., Iida, D. & Ohkawa, K. InGaN-based red light-emitting diodes: from traditional to micro-LEDs. Jpn. J. Appl. Phys. 61 , SA0809 (2022)..

Liang, J. et al. Ultrahigh color rendering in RGB perovskite micro-light-emitting diode arrays with resonance-enhanced photon recycling for next generation displays. Adv. Opt. Mater. 10 , 2101642 (2022)..

Shu, Y. F. et al. Quantum dots for display applications. Angew. Chem. Int. Ed. 59 , 22312–22323 (2020)..

Lu, Z. C. et al. Recent progress of InGaN-based red light emitting diodes. Micro Nanostruct. 183 , 207669 (2023)..

Wong, M. S. et al. Low forward voltage Ⅲ-nitride redmicro-light-emitting diodes on a strain relaxed template with an InGaN decomposition layer. Crystals 12 , 721 (2022)..

Wu, Y. P. et al. Achieving atomically ordered GaN/AlN quantum heterostructures: the role of surface polarity. Proc. Natl. Acad. Sci. USA 120 , e2303473120 (2023)..

Wierer, J. J., David, A. & Megens, M. M. Ⅲ-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat. Photonics 3 , 163–169 (2009)..

Liu, X. H. et al. Micrometer scale InGaN green light emitting diodes with ultra-stable operation. Appl. Phys. Lett. 117 , 011104 (2020)..

Khaidarov, E. et al. Control of LED emission with functional dielectric metasurfaces. Laser Photonics Rev. 14 , 1900235 (2020)..

Wu, Y. P. et al. Ⅲ-nitride nanostructures: emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis. Prog. Quantum Electron. 85 , 100401 (2022)..

Lee, W. et al. Charge-transfer excitons in coupled atomically thin polar nitride quantum wells. Nano Lett. 25 , 3045–3052 (2025)..

Iyer, P. P. et al. Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces. Nat. Photonics 14 , 543–548 (2020)..

Liu, X. H. et al. High efficiency InGaN nanowire tunnel junction green micro-LEDs. Appl. Phys. Lett. 119 , 141110 (2021)..

Pandey, A. et al. Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale. Photonics Res. 10 , 2809–2815 (2022)..

Yeh, Y. W. et al. Advanced atomic layer deposition technologies for micro-LEDs and VCSELs. Nanoscale Res. Lett. 16 , 164 (2021)..

Chen, D. B. et al. Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer. Opt. Express 29 , 36559–36566 (2021)..

Lee, T. Y. et al. Increase in the efficiency of Ⅲ-nitride micro LEDs by atomic layer deposition. Opt. Express 30 , 18552–18561 (2022)..

Martinez de Arriba, G. et al. Simple approach to mitigate the emission wavelength instability of Ⅲ-nitride μLED arrays. ACS Photonics 9 , 2073–2078 (2022)..

Zhuang, Z., Iida, D. & Ohkawa, K. Effects of size on the electrica l and optical properties of InGaN-based red light-emitting diodes. Appl. Phys. Lett. 116 , 173501 (2020)..

Shin, Y. et al. Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes. Opt. Express 30 , 21065–21074 (2022)..

Zhuang, Z. et al. 630-nm red InGaN micro-light-emitting diodes ( < 20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays. Photonics Res. 9 , 1796–1802 (2021)..

Pasayat, S. S. et al. Demonstration of ultra-small ( < 10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency ( > 0.2%) for mini-displays. Appl. Phys. Express 14 , 011004 (2021)..

Yu, L. M. et al. Improving performances of ultra-small size (1-20 μ m) InGaN red micro-LEDs by growing on freestanding GaN substrates. Appl. Phys. Lett. 123 , 232106 (2023)..

Zhuang, Z., Iida, D. & Ohkawa, K. Investigation of InGaN-based red/green micro-light-emitting diodes. Opt. Lett. 46 , 1912–1915 (2021)..

Pandey, A. et al. N-polar InGaN/GaN nano wires: overcoming the efficiency cliff of red-emitting micro-LEDs. Photonics Res. 10 , 1107–1116 (2022)..

Sanyal, S. et al. Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaNmicroLEDs (~625 nm at 1 A cm −2 ) with device sizes down to 3 μm. Jpn. J. Appl. Phys. 63 , 030904 (2024)..

Lim, N. et al. Structural, optical, and electrical characterization of 643 nm red InGaN multiquantum wells grown on strain-relaxed InGaN templates. Adv. Photonics Res. 4 , 2200286 (2023)..

Dussaigne, A. et al. Full InGaN red (625 nm) micro-LED (10 μ m) demonstration on a relaxed pseudo-substrate. Appl. Phys. Express 14 , 092011 (2021)..

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