Over 1.65 GW cm<sup>−2</sup> sr<sup>−1</sup> brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL

Zhicheng Zhang; Wenbo Zhan; Yao Xiao; Chen Luo; Hao Zhou; Wenfan Yang; Yang Cheng; Hao Yu; Quanling Li; Xiao Li; Chaofan Zhang; Jun Wang

doi:10.1038/s41377-026-02230-8

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Over 1.65 GW cm⁻² sr⁻¹ brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL

Original Articles

- Over 1.65 GW cm⁻² sr⁻¹ brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL
- Light: Science & Applications Vol. 15, Issue 6, Pages: 1814-1826(2026)
- Affiliations：
  
  1.College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
  2.Suzhou Everbright Photonics Co., Ltd, Suzhou 215163, China
  3.College of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China
- Author bio：
  
  Zhicheng Zhang (zhicheng_laser@outlook.com)
  Chaofan Zhang (c.zhang@nudt.edu.cn)
  Jun Wang (wjdz@scu.edu.cn)
- Funds：
- DOI：10.1038/s41377-026-02230-8
  CLC：
- Received：17 September 2025，
  
  Revised：2026-01-21，
  
  Accepted：04 February 2026，
  
  Online First：10 March 2026，
  
  Published：30 June 2026
- Accepted：
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Zhang, Z. C. et al. Over 1.65 GW cm⁻² sr⁻¹ brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL. Light: Science & Applications, 15, 1814-1826 (2026). DOI: 10.1038/s41377-026-02230-8.
DOI：

Zhang, Z. C. et al. Over 1.65 GW cm⁻² sr⁻¹ brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL. Light: Science & Applications, 15, 1814-1826 (2026). DOI: 10.1038/s41377-026-02230-8. DOI：

摘要

Abstract

High-brightness yellow lasers are in high demand for applications such as atomic cooling and trapping

optogenetics

and sodium laser guide stars. Herein

we demonstrate the potential of Metal-Organic Chemical Vapor Deposition (MOCVD) for the rapid mass production of high-strain 1.2 μm InGaAs quantum well vertical external cavity surface emitting lasers (VECSELs). Two distinct growth strategies were explored

with a primary focus on enhancing crystal thermal stability and mitigating indium segregation. The as-grown gain chips achieved over 45 W of output power and a slope efficiency exceeding 50%. Furthermore

we verified the feasibility of generating yellow second harmonic generation (SHG)

attaining a 590 nm CW power of ~6.2 W with a slope efficiency of 17%. The beam quality factor (

) was

1.1

approaching diffraction-limited performance

corresponding to a brightness of ~1.65 GW cm

−2

−1

. Overall

these investigations not only expand the performance envelope of MOCVD-grown semiconductor lasers but also deepen the understanding of indium segregation behaviors.

关键词

Keywords

references

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Over 1.65 GW cm−2 sr−1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL

DOI：10.1038/s41377-026-02230-8

摘要

Abstract

关键词

Keywords

references

Over 1.65 GW cm⁻² sr⁻¹ brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL