Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission

Chunshuang Chu; Yao Jiang; Conglin He; Wenjie Li; Kangkai Tian; Yonghui Zhang; Xiaowei Sun; Zi-Hui Zhang

doi:10.1038/s41377-026-02242-4

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Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission

Original Articles

- Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission
- Light: Science & Applications Vol. 15, Issue 6, Pages: 1884-1894(2026)
- Affiliations：
  
  1.School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China
  2.State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Electronics and Information Engineering, Hebei University of Technology, Beichen, Tianjin, China
  3.Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
- Author bio：
  
  Zi-Hui Zhang (zh.zhang@hebut.edu.cn)
- Funds：
- DOI：10.1038/s41377-026-02242-4
  CLC：
- Received：29 June 2025，
  
  Revised：2026-02-01，
  
  Accepted：11 February 2026，
  
  Online First：10 March 2026，
  
  Published：30 June 2026
- Accepted：
Scan QR Code
Chu, C. S. et al. Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. Light: Science & Applications, 15, 1884-1894 (2026).
DOI：

Chu, C. S. et al. Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. Light: Science & Applications, 15, 1884-1894 (2026). DOI： 10.1038/s41377-026-02242-4.

摘要

Abstract

In this work

we have made ultraviolet (UV) light visible by proposing and fabricating an integrated optoelectronic device. The demonstrated device consists of a GaN-based blue mini-light-emitting diode (m

ini-LED) and a phototransistor. The phototransistor is specially designed with an Al

0.20

0.80

N polarization gate. The background electrons can be depleted by the polarization gate to enable the normally-off state for the integrated optoelectronic device when there is no UV illumination. Our measured results show that when the polarization-gated phototransistor is switched off

the current for the integrated optoelectronic device is as low as 1.4 × 10

−4

mA even when the device is biased to 10 V. Upon the 12.7 mW UV excitation

the current for the integrated device can be increased to 44.4 mA at the bias of 10.0 V. This enables the GaN-based visible mini-LED to generate the optical power of 81.1 mW. The largest power ratio between the UV excitation light and the mini-LED light of 49.8 times can be achieved

indicating the advantage of monitoring weak UV light by using the proposed design.

关键词

Keywords

references

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