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1.Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, 100084 Beijing, China
2.MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
3.State Key Laboratory of Flexible Electronics Technology, Tsinghua University, 100084 Beijing, China
4.School of Interdisciplinary Science, Beijing Institute of Technology, 100081 Beijing, China
Jiawei Chen (chenjiawei@njust.edu.cn)
Jian Xu (jianxu.xu@bit.edu.cn)
Dongxin Ma (dongxinma@tsinghua.edu.cn)
Received:29 October 2025,
Revised:2026-01-21,
Accepted:11 February 2026,
Online First:06 March 2026,
Published:31 May 2026
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Cui, Y. H. et al. Ion-pair pinning on perovskite quantum dots for high-efficiency air-processed light-emitting diodes with Rec. 2020 compliance. Light: Science & Applications, 15, 1712-1724 (2026).
Cui, Y. H. et al. Ion-pair pinning on perovskite quantum dots for high-efficiency air-processed light-emitting diodes with Rec. 2020 compliance. Light: Science & Applications, 15, 1712-1724 (2026). DOI: 10.1038/s41377-026-02247-z.
Perovskite quantum dot light-emitting diodes (QLEDs) offer superior efficiency and high colour purity
making them promising candidates for next-generation lighting and display technologies. However
fabricating the emissive perovskite quantum dot (QD) layer typically requires a protective atmosphere due to its air sensitivity
thereby increasing production costs and limiting industrial scalability. Here
we propose an ion-pair pinning strategy by using tetraalkylammonium triflate (NR
4
OTf) to enable ambient-air processing of formamidinium lead bromide (FAPbBr
3
) QD films. The trifluoromethanesulfonic acid anions (OTf
−
) hydrogen bond with FA
+
inhibiting its detachment and passivating the uncoordinated Pb
2+
while the tetraalkylammonium cations (NR
4
+
) serve as X-type ligands to inhibit deprotonat
ion. This dual ion-pair pinning effect stabilises the QD lattice and provides surface resistance to moisture and oxygen
thereby improving the uniformity
stability
and optoelectronic performance of air-processed QD films. The as-constructed air-processed QLED achieves a high external quantum efficiency (EQE) of 21.3% and a peak luminance of over 3 × 10
4
cd m
−2
at 529 nm with Rec. 2020 compliance (EQE of 23.9% and luminance of over 8 × 10
4
cd m
−2
for the N
2
-processed QLED). Our work eliminates the reliance on inert gas protection in perovskite QLED fabrication
laying a foundation for their low-cost
large-scale manufacturing and expansion into diversified applications.
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