Optically monitoring and controlling nanoscale topography during semiconductor etching

Chris Edwards; Amir Arbabi; Gabriel Popescu; Lynford L Goddard

doi:10.1038/lsa.2012.30

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Optically monitoring and controlling nanoscale topography during semiconductor etching

Original Article

- Optically monitoring and controlling nanoscale topography during semiconductor etching
- Optically monitoring and controlling nanoscale topography during semiconductor etching
- LSA 2012年1卷第1期
- Affiliations：
  
  Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
- Author bio：
  
  Dr LL Goddard, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 N. Wright St., MNTL 2254, Urbana, IL 61801, USA E-mail: lgoddard@illinois.edu
- Funds：
- DOI：10.1038/lsa.2012.30
  中图分类号：
- 纸质出版日期：2012-03，
  
  网络出版日期：2012-09-28，
  
  收稿日期：2012-01-26，
  
  修回日期：2012-06-19，
  
  录用日期：2012-06-20
- Accepted：
Scan QR Code
Optically monitoring and controlling nanoscale topography during semiconductor etching[J]. LSA, 2012,1(1).

Edwards, C. et al. Optically monitoring and controlling nanoscale topography during semiconductor etching. Light: Science & Applications, 1, e30 (2012).
Optically monitoring and controlling nanoscale topography during semiconductor etching[J]. LSA, 2012,1(1). DOI： 10.1038/lsa.2012.30.

Edwards, C. et al. Optically monitoring and controlling nanoscale topography during semiconductor etching. Light: Science & Applications, 1, e30 (2012). DOI： 10.1038/lsa.2012.30.

摘要

Abstract

We present epi-diffraction phase microscopy (epi-DPM) as a non-destructive optical method for monitoring semiconductor fabrication processes in real time and with nanometer level sensitivity. The method uses a compact Mach–Zehnder interferometer to recover quantitative amplitude and phase maps of the field reflected by the sample. The low temporal noise of 0.6 nm per pixel at 8.93 frames per second enabled us to collect a three-dimensional movie showing the dynamics of wet etching and thereby accurately quantify non-uniformities in the etch rate both across the sample and over time. By displaying a gray-scale digital image on the sample with a computer projector

we performed photochemical etching to define arrays of microlenses while simultaneously monitoring their etch profiles with epi-DPM.

关键词

Keywords

microscopynanoscale metrologyphotochemical etchingquantitative phase imagingsemiconductor process monitoring

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