Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission

Kateřina Dohnalová; Alexander N Poddubny; Alexei A Prokofiev; Wieteke DAM de Boer; Chinnaswamy P Umesh; Jos MJ Paulusse; Han Zuilhof; Tom Gregorkiewicz

doi:10.1038/lsa.2013.3

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Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission

Original Articles

- Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission
- Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission
- LSA 2013年2卷第1-2期
- Affiliations：
  
  1.Van der Waals-Zeeman Institute, University of Amsterdam, NL-1098 XH Amsterdam, The Netherlands
  2.Laboratory of Organic Chemistry, Wageningen University, 6703 HB Wageningen, The Netherlands
  3.Department of Chemical and Materials Engineering, King Abdulaziz University, Jeddah, Saudi Arabia
  4.Ioffe Physical-Technical Institute RAS, 26 Polytechnicheskaya, 194021 Saint-Petersburg, Russia
  5.Current address: MIRA Institute, Department of Biomedical Chemistry, University of Twente, Building Zuidhorst Enschede, The Netherlands
- Author bio：
  
  Dr K Dohnalová, Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam, The Netherlands E-mail: k.dohnalova@uva.nl
- Funds：
- DOI：10.1038/lsa.2013.3
  中图分类号：
- 纸质出版日期：2013-06，
  
  网络出版日期：2013-01-04，
  
  收稿日期：2012-07-05，
  
  修回日期：2012-09-11，
  
  录用日期：2012-09-25
- Accepted：
Scan QR Code
Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission[J]. LSA, 2013,2(1-2).

Dohnalová, K. et al. Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission. Light: Science & Applications, 2, e47 (2013).
Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission[J]. LSA, 2013,2(1-2). DOI： 10.1038/lsa.2013.3.

Dohnalová, K. et al. Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission. Light: Science & Applications, 2, e47 (2013). DOI： 10.1038/lsa.2013.3.

摘要

Abstract

Colloidal semiconductor quantum dots (QDs) constitute a perfect material for ink-jet printable large area displays

photovoltaics

light-emitting diode

bio-imaging luminescent markers and many other applications. For this purpose

efficient light emission/absorption and spectral tunability are necessary conditions. These are currently fulfilled by the direct bandgap materials. Si-QDs could offer the solution to major hurdles posed by these materials

namely

toxicity (e.g.

Cd-

Pb- or As-based QDs)

scarcity (e.g.

QD with In

Te) and/or instability. Here we show that by combining quantum confinement with dedicated surface engineering

the biggest drawback of Si—the indirect bandgap nature—can be overcome

and a 'direct bandgap' variety of Si-QDs is created. We demonstrate this transformation on chemically synthesized Si-QDs using state-of-the-art optical spectroscopy and theoretical modelling. The carbon surface termination gives rise to drastic modification in electron and hole wavefunctions and radiative transitions between the lowest excited states of electron and hole attain 'direct bandgap-like' (phonon-less) character. This results in efficient fast emission

tunable within the visible spectral range by QD size. These findings are fully justified within a tight-binding theoretical model. When the C surface termination is replaced by oxygen

the emission is converted into the well-known red luminescence

with microsecond decay and limited spectral tunability. In that way

the 'direct bandgap' Si-QDs convert into the 'traditional' indirect bandgap form

thoroughly investigated in the past.

关键词

Keywords

direct bandgapoptical spectroscopyoptoelectronicsorganic cappingsilicon quantum dotstight binding model

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