Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Anders Lundskog; Chih-Wei Hsu; K Fredrik Karlsson; Supaluck Amloy; Daniel Nilsson; Urban Forsberg; Per Olof Holtz; Erik Janzén

doi:10.1038/lsa.2014.20

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Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Original Articles

- Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots
- Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots
- LSA 2014年3卷第1期
- Affiliations：
  
  1.Department of Physics Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
  2.Department of Physics, Faculty of Science, Thaksin University, Phattalung 93110, Thailand
- Author bio：
  
  Dr A Lundskog, Department of Physics Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden E-mail: anlun@ifm.liu.se
- Funds：
- DOI：10.1038/lsa.2014.20
  中图分类号：
- 纸质出版日期：2014-03，
  
  网络出版日期：2014-01-31，
  
  收稿日期：2013-04-22，
  
  修回日期：2013-09-29，
  
  录用日期：2013-10-11
- Accepted：
Scan QR Code
Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots[J]. LSA, 2014,3(1).

Lundskog, A. et al. Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots. Light: Science & Applications, 3, e139 (2014).
Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots[J]. LSA, 2014,3(1). DOI： 10.1038/lsa.2014.20.

Lundskog, A. et al. Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots. Light: Science & Applications, 3, e139 (2014). DOI： 10.1038/lsa.2014.20.

摘要

Abstract

Semiconductor quantum dots (QDs) have been demonstrated viable for efficient light emission applications

in particular for the emission of single photons on demand. However

the preparation of QDs emitting photons with predefined and deterministic polarization vectors has proven arduous. Access to linearly polarized photons is essential for various applications. In this report

a novel concept to directly generate linearly-polarized photons is presented. This concept is based on InGaN QDs grown on top of elongated GaN hexagonal pyramids

by which the predefined elongation determines the polarization vectors of the emitted photons from the QDs. This growth scheme should allow fabrication of ultracompact arrays of photon emitters

with a controlled polarization direction for each individual emitter.

关键词

Keywords

GaNInGaNphotoluminescencepolarized emissionquantum dot

references

Arakawa Y. Progress in growth and physics of nitride-based quantum dots.Phys Status Solidi (a)2001;188: 37–45..

Shields AJ. Semiconductor quantum light sources.Nat Photon2007;1: 215–223..

Zeng N, Jiang X, Gao Q, He Y, Ma H. Linear polarization difference imaging and its potential applications.Appl Opt2009;48: 6734–6739..

Knill A, Laflamme R, Milburn GJ. A scheme for efficient quantum computation with linear optics.Nature2001;409: 46–52..

Young RJ, Ellis DJ, Stevenson RM, Bennett AJ, Atkinson Pet al. Quantum-dot sources for single photons and entangled photon pairs.Proc IEEE2007;95: 1805–1814..

Ishikawa T, Nishimura T, Kohmoto S, Asakawa K. Site-controlled InAs quantum-dot structures on GaAs surfaces patterned byin-situelectron beam lithography.Appl Phys Lett2000;76: 167–169..

Hartmann A, Ducommun Y, Loubies L, Leifer K, Kapon E. Structure and photoluminescence of single AlGaAs/GaAs quantum dots grown in inverted tetrahedral pyramids.Appl Phys Lett1998;73: 2322–2324..

Chithrani D, Williams RL, Lefebvre J, Poole PJ, Aers GC. Optical spectroscopy of single site-selected InAs/InP self-assembled quantum dots.Appl Phys Lett2004;84: 978–980..

Edwards PR, Martin RW, Watson IM, Liu C, Taylor RAet al. Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays.Appl Phys Lett2004;85: 4281–4283..

Chithrani D, Williams RL, Lefebvre J, Poole PJ, Aers GC. Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots.Appl Phys Lett2004;84: 978–980..

Hsu CW, Lundskog A, Karlsson KF, Forsberg U, Janzén Eet al. Single excitons in InGaN quantum dots on GaN pyramid arrays.Nano Lett2011;11: 2415–2418..

Minot ED, Kelkensberg F, van Kouwen M, van Dam JA, Kouwenhoven LPet al. Single quantum dot nanowire LEDs.Nano Lett2007;7: 367–371..

Choi K, Arita M, Kako S, Arakawa Y. Site-controlled growth of single GaN quantum dots in nanowires by MOCVD.J Cryst Growth2013;370: 328–331..

Deshpande S, Heo J, Das A, Bhattacharya P. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.Nat Commun2013;4: 1675..

Kita T, Wada O, Ebe H, Nakata Y, Sugawara M. Polarization-independent photoluminescence from columnar InAs/GaAs self-assembled quantum dots.Jpn J Appl Phys2002;41: L1143–L1145..

Yasuoka N, Ebe H, Kawaguchi K, Ekawa M, Morito Ket al. Polarization-insensitive quantum dot semiconductor optical amplifiers using strain-controlled columnar quantum dots.J Lightwave Technol2012;30: 68–75..

Strauf S, Stoltz NG, Rakher MT, Coldren LA, Petroff PMet al. High-frequency single photon source with polarization control.Nat Photon2007;1: 704–708..

Unitt DC, Bennett AJ, Atkinson P, Ritchie DA, Shields AJ. Polarization control of quantum dot single-photon sources via a dipole-dependent Purcell effect.Phys Rev B2005;72: 033318..

Rakher MT, Stoltz NG, Coldren LA, Petroff PM, Bouwmeester D. Polarization-switchable single photon source using the Stark effect.Appl Phys Lett2008;93: 091118..

Kako S, Santori C, Hoshino K, Gotzinger S, Yamamoto Yet al. GaN single photon source operating at 200K.Nat Mater2006;5: 887–892..

Amloy S, Karlsson KF, Holtz PO. Ⅲ-nitride based quantum dots for photon emission with controlled polarization switching. arXiv: 1311.5731:http://arxiv.org/abs/1311.5731http://arxiv.org/abs/1311.5731.

Bardoux R, Guillet T, Gil B, Lefebvre P, Bretagnon Tet al. Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory.Phys Rev B2008;77: 235315..

Winkelnkemper M, Seguin R, Rodt S, Schliwa A, Reiβmann Let al. Polarization emission lines from A- and B-type exciton complexes in single InGaN/GaN QDs.J Appl Phys2007;101: 113708..

Forsberg U, Lundskog A, Kakanakova-Georgieva A, Ciechonski R, Janzén E. Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures.J Cryst Growth2009;311: 3007–3010..

Lundskog A, Forsberg U, Holtz PO, Janzén E. Morphology control of hot-wall MOCVD selective-area-grown hexagonal GaN pyramids.Cryst Growth Des2012;12: 5491–5496..

Lundskog A, Palisaitis J, Hsu CW, Eriksson M, Karlsson KFet al. InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids.Nanotechnology2012;23: 305708..

Empedocles SA, Bawendi MG. Quantum-confined stark effect in single CdSe nanocrystallite quantum dots.Science1997;278: 2114–2117..

Hsu CW, Moskalenko ES, Eriksson MO, Lundskog A, Karlsson KFet al. The charged exciton in an InGaN QD on a GaN pyramid.Appl Phys Lett2013;103: 013109..

Liu QK, Hoffmann A, Siegle H, Kaschner A, Thomsen Cet al. Stress analysis of selective epitaxial growth of GaN.Appl Phys Lett1999;74: 3122–3124..

Pierre-Louis O, D'Orsogna MR, Einstein TL. Edge diffusion during growth: the kink Schwoebel–Erhlich effect and resulting instabilities.Phys Rev Lett1999;82: 3661–3664..

Liu SJ, Wang EG, Woo CH, Huang H. Three-dimensional Schwoebel–Ehrlich barrier.J Comp Aid Mater Des2001;7: 195–201..

Amloy S, Karlsson KF, Andersson TG, Holtz PO. Onthe polarized emission from exciton complexes in GaN quantum dots.Appl Phys Lett2012;100: 021901..

Winkelnkemper M, Schliwa A, Bimberg D. Interrelation of structural and electronic properties in InxGa1−xN quantum dots using an eight-band k·p model.Phys Rev B2006;74: 155322..

Matioli E, Brinkley S, Kelchner KM, Hu YL, Nakamura Set al. High-brightness polarized light-emitting diodes.Light Sci Appl2012;1: e22; doi:10.1038/lsa.2012.22..

Choi JH, Zoulkarneev A, Kim SI, Baik CW, Yang MHet al. Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates.Nat Photon2011;5: 763–769..

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