Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Kateřina Kůsová; Ivan Pelant; Jan Valenta

doi:10.1038/lsa.2015.109

Go to Nature Website

Your Location：

Home >

Browse articles >

Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Original Articles

- Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy
- Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy
- LSA 2015年4卷第4期
- Affiliations：
  
  1.Institute of Physics of the ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic
  2.Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
- Author bio：
  
  K Kůsová, Email: kusova@fzu.cz
- Funds：
- DOI：10.1038/lsa.2015.109
  中图分类号：
- 纸质出版日期：2015-12，
  
  网络出版日期：2015-06-10，
  
  收稿日期：2014-12-15，
  
  修回日期：2015-06-07，
  
  录用日期：2015-06-09
- Accepted：
Scan QR Code
Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy[J]. LSA, 2015,4(4).

Kůsová, K., Pelant, I. & Valenta, J. Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy. Light: Science & Applications, 4, e336 (2015).
Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy[J]. LSA, 2015,4(4). DOI： 10.1038/lsa.2015.109.

Kůsová, K., Pelant, I. & Valenta, J. Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy. Light: Science & Applications, 4, e336 (2015). DOI： 10.1038/lsa.2015.109.

摘要

Abstract

Strain-engineered silicon nanocrystals (SiNCs) have recently been shown to possess direct bandgap. Here

we report the observation of a rich structure in the single-nanocrystal photoluminescence spectra of strain-engineered direct-bandgap SiNCs in the temperature range of 9–300 K. The relationship between individual types of spectra is discussed

and the numerical modeling of spectral diffusion of the experimentally acquired spectra reveals a common origin for most types. The intrinsic spectral shape is shown to be a structure that contains three peaks

approximately 150 meV apart

each of which possesses a Si phonon substructure. Narrow spectral lines

reaching ≤1 meV at 20 K

are detected. The observed temperature dependence of the spectral structure can be assigned to the radiative recombination of positively charged trions

in contrast to several previous reports linking a very similar shape to phonons in the surface capping layers. Our result serves as strong additional support for the direct-bandgap nature of the investigated SiNCs.

关键词

Keywords

direct bandgaplow-temperature single-nanocrystal spectroscopysilicon nanocrystalstrions

references

Hapala P, Kůsová K, Pelant I, Jelínek P. Theoretical analysis of electronic band structure of 2- to 3-nm Si nanocrystals.Phys Rev B2013;87: 195420..

Hannah DC, Yang J, Podsiadlo P, Chan MK, Demortiere Aet al. On the origin of photoluminescence in silicon nanocrystals: pressure-dependent structural and optical studies.Nano Lett2012;12: 4200–4205..

Sangghaleh F, Bruhn B, Schmidt T, Linnros J. Exciton lifetime measurements on single silicon quantum dots.Nanotechnology2013;24: 225204..

English DS, Pell LE, Yu Z, Barbara PF, Korgel BA. Size tunable visible luminescence from individual organic monolayer stabilized silicon nanocrystal quantum dots.Nano Lett2002;2: 681–685..

Kůsová K, Hapala P, Valenta J, Jelínek P, Cibulka Oet al. Direct bandgap silicon: tensile-strained silicon nanocrystals.Adv Mater Interf2014;1: 1300042..

Dohnalová K, Fučíková A, Umesh CP, Humpolíčková J, Paulusse JMet al. Microscopic origin of the fast blue-green luminescence of chemically synthesized non-oxidized silicon quantum dots.Small2012;8: 3185–3191..

Li Q, He Y, Chang J, Wang L, Chen Het al. Surface-modified silicon nanoparticles with ultrabright photoluminescence and single-exponential decay for nanoscale fluorescence lifetime imaging of temperature.J Am Chem Soc2013;135: 14924–14927..

Dohnalová K, Poddubny AN, Prokofiev AA, de Boer WDAM, Umesh CPet al. Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission.Light-Sci Appl2013;2: e47; doi: 10.1038/lsa.2013.3..

Dohnalová K, Gregorkiewicz T, Kůsová K. Silicon quantum dots: surface matters.J Phys Condens Matter2014;26: 173201..

Poddubny AN, Dohnalová K. Direct band gap silicon quantum dots achievedviaelectronegative capping.Phys Rev B2014;90: 245439..

Empedocles SA, Neuhauser R, Shimizu K, Bawendi MG. Photoluminescence from single semiconductor nanostructures.Adv Mat1999;11: 1243–1256..

Fernée MJ, Tamarat P, Lounis B. Cryogenic single-nanocrystal spectroscopy: reading the spectral fingerprint of individual CdSe quantum dots.J Phys Chem Lett2013;4: 609–618..

Wang X, Ren X, Kahen K, Hahn MA, Rajeswaran Met al. Non-blinking semiconductor nanocrystals.Nature2009;459: 686–689..

García-Santamaría F, Chen Y, Vela J, Schaller RD, Hollingsworth JA. Suppressed Auger recombination in "giant" nanocrystals boosts optical gain performance.Nano Lett2009;9: 3482–3488..

Wang C, Wehrenberg BL, Woo CY, Guyot-Sionnest P. Light emission and amplification in charged CdSe quantum dots.J Phys Chem B2004;108: 9027–9031..

Fernée MJ, Littleton BN, Rubinsztein-Dunlop H. Detection of bright trion states using the fine structure emission of single CdSe/ZnS colloidal quantum dots.ACS Nano2009;3: 3762–3768..

Galland C, Ghosh Y, Steinbrück A, Sykora M, Hollingsworth JAet al. Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots.Nature2011;479: 203–207..

Mason MD, Credo GM, Weston KD, Buratto SK. Luminescence of individual porous Si chromophores.Phys Rev Lett1998;80: 5405–5408..

Sirbuly DJ, Gargas DJ, Mason MD, Carson PJ, Buratto SK. Optical anisotropy in individual porous silicon nanoparticles containing multiple chromophores.ACS Nano2008;2: 1131–1136..

Valenta J, Fucikova A, Vácha F, Adamec F, Humpolíčková Jet al. Light-emission performance of silicon nanocrystals deduced from single quantum dot spectroscopy.Adv Funct Mater2008;18: 2666–2672..

Valenta J, Juhasz R, Linnros J. Photoluminescence spectroscopy of single silicon quantum dots.Appl Phys Lett2002;80: 1070–1072..

Martin J, Cichos F, Huisken F, von Borczyskowski C. Electron-phonon coupling and localization of excitons in single silicon nanocrystals.Nano Lett2008;8: 656–660..

Schmidt T, Chizhik AI, Chizhik AM, Potrick K, Meixner AJet al. Radiative exciton recombination and defect luminescence observed in single silicon nanocrystals.Phys Rev B2012;86: 125302..

Kůsová K, Cibulka O, Dohnalová K, Pelant I, Valenta Jet al. Brightly luminescent organically capped silicon nanocrystals fabricated at room temperature and atmospheric pressure.ACS Nano2010;4: 4495–4504..

Sychugov I, Juhasz R, Valenta J, Linnros J. Narrow Luminescence Linewidth of a Silicon Quantum Dot.Phys. Rev. Lett2005;94: 087405..

Sychugov I, Valenta J, Mitsuishi K, Fujii M, Linnros J. Photoluminescence measurements of zero-phonon optical transitions in silicon nanocrystals.Phys Rev B2011;84: 125326..

Bruhn B, Valenta J, Sychugov I, Mitsuishi K, Linnros J. Transition from silicon nanowires to isolated quantum dots: optical and structural evolution.Phys Rev B2013;87: 045404..

Dohnalová K, Ondič L, Kůsová K, Pelant I, Rehspringer JLet al. White-emitting oxidized silicon nanocrystals: discontinuity in spectral development with reducing size.J Appl Phys2010;107: 053102..

Kůsová K, Cibulka O, Dohnalová K, Pelant I, Fučíková Aet al. Yellow-emitting colloidal suspensions of silicon nanocrystals: fabrication technology, luminescence performance and application prospects.Physica E2009;41: 982–985..

Dohnalová K, Pelant I, Kůsová K, Gilliot P, Gallart Met al. Closely packed luminescent silicon nanocrystals in a distributed-feedback laser cavity.New J Phys2008;10: 063014..

Snoke DW, Shields AJ, Cardona M. Phonon-absorption recombination luminescence of room-temperature excitons in Cu2O.Phys Rev B1992;45: 11693–11697..

Moskalenko AS, Berakdar J, Poddubny AN, Prokofiev AA, Yassievich INet al. Multiphonon relaxation of moderately excited carriers in Si/SiO2nanocrystals.Phys Rev B2012;85: 085432..

Ondič L, Kůsová K, Ziegler M, Fekete L, Gärtnerová Vet al. A complex study of the fast blue luminescence of oxidized silicon nanocrystals: the role of the core.Nanoscale2014;6: 3837–3845..

Moskalenko AS, Berakdar J, Prokofiev AA, Yassievich IN. Single-particle states in spherical Si/SiO2quantum dots.Phys Rev B2007;76: 085427..

Spenke E.Elektronische Halbleiter. Berlin Heidelberg: Springer; 1955.

Plakhotnik T, Fernée MJ, Littleton B, Rubinsztein-Dunlop H, Potzner Cet al. Anomalous power laws of spectral diffusion in quantum dots: a connection to luminescence intermittency.Phys Rev Lett2010;105: 167402..

Fernée MJ, Littleton B, Plakhotnik T, Rubinsztein-Dunlop H, Gómez DEet al. Charge hopping revealed by jitter correlations in the photoluminescence spectra of single CdSe nanocrystals.Phys Rev B2010;81: 155307..

Fernée MJ, Sinito C, Louyer Y, Tamarat P, Lounis B. The ultimate limit to the emission linewidth of single nanocrystals.Nanotechnology2013;24: 465703..

Gómez DE, Califano M, Mulvaney P. Optical properties of single semiconductor nanocrystals.Phys Chem Chem Phys2006;8: 4989–5011..

Pelant I, Valenta J.Luminescence Spectroscopy of Semiconductors. Oxford: Oxford University Press; 2012.

Trinh MT, Limpens R, Gregorkiewicz T. Experimental investigations and modeling of Auger recombination in silicon nanocrystals.J Phys Chem C2013;117: 5963–5968..

Abakumov VN, Perel VI, Yassievich IN.Nonradiative Recombination in Semiconductors. Amsterdam: North Holland; 1991.

Cohn AW, Rinehart JD, Schimpf AM, Weaver AL, Gamelin DR. Size dependence of negative trion Auger recombination in photodoped CdSe nanocrystals.Nano Lett2014;14: 353–358..

Frantsuzov P, Kuno M, Jankó B, Marcus RA. Universal emission intermittency in quantum dots, nanorods and nanowires.Nature Phys2008;4: 519–522..

Cichos F, von Borczyskowski C, Orrit M. Power-law intermittency of single emitters.Curr Opin Colloid Interface Sci2007;12: 272–284..

Efros AL, Rosen M. Random telegraph signal in the photoluminescence intensity of a single quantum dot.Phys Rev Lett1997;78: 1110–1113..

Thomas GA, Rice TM. Trions, molecules and excitons above the Mott density in Ge.Solid State Commun1977;23: 359–363..

Zhidkov AE, Pokrovskii YE. Existence of bi-excitons and trions in germanium.JETP Lett1979;30: 468–471..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Multi-chromatic silicon nanocrystals