1.State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
2.Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Z Zhou, Email: zjzhou@pku.edu.cn
纸质出版日期:2015-12,
网络出版日期:2015-08-05,
收稿日期:2014-12-25,
修回日期:2015-07-04,
录用日期:2015-08-04
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On-chip light sources for silicon photonics[J]. LSA, 2015,4(4).
Zhou, Z. P., Yin, B. & Michel, J. On-chip light sources for silicon photonics. Light: Science & Applications, 4, e358 (2015).
On-chip light sources for silicon photonics[J]. LSA, 2015,4(4). DOI: 10.1038/lsa.2015.131.
Zhou, Z. P., Yin, B. & Michel, J. On-chip light sources for silicon photonics. Light: Science & Applications, 4, e358 (2015). DOI: 10.1038/lsa.2015.131.
Serving as the electrical to optical converter
the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued. Here
we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength
pump condition
power consumption
and fabrication process. Additionally
the performance of each contender is also assessed with respect to thermal stability
which is a crucial parameter to consider in complex optoelectronic integrated circuits (OEICs) and optical interconnections. Currently
Ⅲ-Ⅴ-based silicon (Si) lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future. However
in the long term
direct hetero-epitaxial growth of Ⅲ–Ⅴ materials on Si seems more promising for low-cost
high-yield fabrication. The demonstration of high-performance quantum dot (QD) lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers. The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs. The Germanium (Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future. Compared with a Ⅲ-Ⅴ-based Si laser
the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology. Additionally
the versatility of Ge facilitates photon emission
modulation
and detection simultaneously with a simple process complexity and low cost.
on-chip light sourcesoptical interconnectionsoptoelectronic integrated circuitsilicon photonics
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