Doped GaSe crystals for laser frequency conversion

Jin Guo; Ji-Jiang Xie; Dian-Jun Li; Gui-Long Yang; Fei Chen; Chun-Rui Wang; Lai-Ming Zhang; Yury M Andreev; Konstantin A Kokh; Gregory V Lanskii; Valery A Svetlichnyi

doi:10.1038/lsa.2015.135

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Doped GaSe crystals for laser frequency conversion

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- Doped GaSe crystals for laser frequency conversion
- Doped GaSe crystals for laser frequency conversion
- LSA 2015年4卷第4期
- Affiliations：
  
  1.State Key Laboratory of Laser Interaction with Matter, Changchun Institute of Optics, Fine Mechanics and Physics, CAS, Changchun 130033, China
  2.Innovation Laboratory of Electro-Optical Countermeasures Technology, Changchun Institute of Optics, Fine Mechanics and Physics, CAS, Changchun 130033, China
  3.Laboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, Tomsk, 634055, Russia
  4.Laboratory of Advanced Materials and Technologies, Siberian Physical-Technical Institute of Tomsk State University, Tomsk 634050, Russia
  5.Crystal Growth Laboratory, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090, Russia
  6.Novosibirsk State University, Novosibirsk 630090, Russia
- Author bio：
  
  VA Svetlichnyi, Email: v_svetlichnyi@bk.ru
- Funds：
- DOI：10.1038/lsa.2015.135
  中图分类号：
- 纸质出版日期：2015-12，
  
  网络出版日期：2015-08-22，
  
  收稿日期：2014-12-24，
  
  修回日期：2015-08-20，
  
  录用日期：2015-08-20
- Accepted：
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Doped GaSe crystals for laser frequency conversion[J]. LSA, 2015,4(4).

Guo, J. et al. Doped GaSe crystals for laser frequency conversion. Light: Science & Applications, 4, e362 (2015).
Doped GaSe crystals for laser frequency conversion[J]. LSA, 2015,4(4). DOI： 10.1038/lsa.2015.135.

Guo, J. et al. Doped GaSe crystals for laser frequency conversion. Light: Science & Applications, 4, e362 (2015). DOI： 10.1038/lsa.2015.135.

摘要

Abstract

In this review

we introduce the current state of the art of the growth technology of pure

lightly doped

and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 μm) through the mid- and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time

we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping

uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover

doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally

doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency.

关键词

Keywords

frequency conversionGaSesolid solution crystalTHz

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