1.Van der Waals-Zeeman Institute, University of Amsterdam, 1098 XH Amsterdam, The Netherlands
2.FCT-DEEI, University of the Algarve, 8005-139 Faro, Portugal
3.Optoelectronic Materials, Faculty of Applied Sciences, Delft University of Technology, 2628 BL Delft, The Netherlands
T Gregorkiewicz, Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands E-mail: T.Gregorkiewicz@uva.nl
纸质出版日期:2015-03,
网络出版日期:2014-12-18,
收稿日期:2014-07-19,
修回日期:2014-12-04,
录用日期:2014-12-14
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Carrier multiplication in germanium nanocrystals[J]. LSA, 2015,4(1).
Saeed, S. et al. Carrier multiplication in germanium nanocrystals. Light: Science & Applications, 4, e251 (2015).
Carrier multiplication in germanium nanocrystals[J]. LSA, 2015,4(1). DOI: 10.1038/lsa.2015.24.
Saeed, S. et al. Carrier multiplication in germanium nanocrystals. Light: Science & Applications, 4, e251 (2015). DOI: 10.1038/lsa.2015.24.
Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon–dioxide matrix. This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process. The average germanium nanocrystal size is approximately 5–6 nm
as inferred from photoluminescence and Raman spectra. A carrier multiplication efficiency of approximately 190% is measured for photo-excitation at 2.8 times the optical bandgap of germanium nanocrystals
deduced from their photoluminescence spectra.
carrier multiplicationgermanium nanocrystalstransient absorption
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