MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

Xinchen Li; Fengxian Xie; Shaoqing Zhang; Jianhui Hou; Wallace CH Choy

doi:10.1038/lsa.2015.46

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MoO_x and V₂O_x as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

Original Articles

- MoO_x and V₂O_x as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices
- MoO_x and V₂O_x as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices
- LSA 2015年4卷第2期
- Affiliations：
  
  1.Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
  2.Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Author bio：
  
  Wallace CH Choy, Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China Email: chchoy@eee.hku.hk
- Funds：
- DOI：10.1038/lsa.2015.46
  中图分类号：
- 纸质出版日期：2015-06，
  
  网络出版日期：2015-01-15，
  
  收稿日期：2014-08-29，
  
  修回日期：2014-12-18，
  
  录用日期：2015-01-13
- Accepted：
Scan QR Code
MoO_x and V₂O_x as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices[J]. LSA, 2015,4(2).

Li, X. C. et al. MoO_x and V₂O_x as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices. Light: Science & Applications, 4, e273 (2015).
MoO_x and V₂O_x as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices[J]. LSA, 2015,4(2). DOI： 10.1038/lsa.2015.46.

Li, X. C. et al. MoO_x and V₂O_x as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices. Light: Science & Applications, 4, e273 (2015). DOI： 10.1038/lsa.2015.46.

摘要

Abstract

To achieve fabrication and cost competitiveness in organic optoelectronic devices that include organic solar cells (OSCs) and organic light-emitting diodes (OLEDs)

it is desirable to have one type of material that can simultaneously function as both the electron and hole transport layers (ETLs and HTLs) of the organic devices in all device architectures (i.e.

normal and inverted architectures). We address this issue by proposing and demonstrating Cs-intercalated metal oxides (with various Cs mole ratios) as both the ETL and HTL of an organic optoelectronic device with normal and inverted device architectures. Our results demonstrate that the new approach works well for widely used transition metal oxides of molybdenum oxide (MoO

) and vanadium oxide (V

). Moreover

the Cs-intercalated metal-oxide-based ETL and HTL can be easily formed under the conditions of a room temperature

water-free and solution-based process. These conditions favor practical applications of OSCs and OLEDs. Notably

with the analyses of the Kelvin Probe System

our approach of Cs-intercalated metal oxides with a wide mole ratio range of transition metals (Mo or V)/Cs from 1∶0 to 1∶0.75 can offer significant and continuous work function tuning as large as 1.31 eV for functioning as both an ETL and HTL. Consequently

our method of intercalated metal oxides can contribute to the emerging large-scale and low-cost organic optoelectronic devices.

关键词

Keywords

metal oxides carrier transport layersnormal and inverted device architecturesorganic light-emitting diodesorganic solar cellsroom-temperature solution process

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