Recent advances in ultrafast semiconductor disk lasers

Bauke W Tilma; Mario Mangold; Christian A Zaugg; Sandro M Link; Dominik Waldburger; Alexander Klenner; Aline S Mayer; Emilio Gini; Matthias Golling; Ursula Keller

doi:10.1038/lsa.2015.83

Go to Nature Website

Your Location：

Home >

Browse articles >

Recent advances in ultrafast semiconductor disk lasers

Reviews

- Recent advances in ultrafast semiconductor disk lasers
- Recent advances in ultrafast semiconductor disk lasers
- LSA 2015年4卷第3期
- Affiliations：
  
  1.Department of Physics, Institute for Quantum Electronics, ETH Zürich, Zürich 8093, Switzerland
  2.FIRST Center for Micro- and Nanoscience, ETH Zürich, Zürich 8093, Switzerland
- Author bio：
  
  B W Tilma, Email: b.tilma@phys.ethz.ch
  U Keller, Email: keller@phys.ethz.ch
- Funds：
- DOI：10.1038/lsa.2015.83
  中图分类号：
- 纸质出版日期：2015-09，
  
  网络出版日期：2015-03-31，
  
  收稿日期：2014-12-23，
  
  修回日期：2015-03-24，
  
  录用日期：2015-03-30
- Accepted：
Scan QR Code
Recent advances in ultrafast semiconductor disk lasers[J]. LSA, 2015,4(3).

Tilma, B. W. et al. Recent advances in ultrafast semiconductor disk lasers. Light: Science & Applications, 4, e310 (2015).
Recent advances in ultrafast semiconductor disk lasers[J]. LSA, 2015,4(3). DOI： 10.1038/lsa.2015.83.

Tilma, B. W. et al. Recent advances in ultrafast semiconductor disk lasers. Light: Science & Applications, 4, e310 (2015). DOI： 10.1038/lsa.2015.83.

摘要

Abstract

The performance of ultrafast semiconductor disk lasers has rapidly advanced in recent decades. The strong interest from industry for inexpensive

compact

and reliable ultrafast laser sources in the picosecond and femtosecond domains has driven this technology toward commercial products. Frequency metrology and biomedical applications would benefit from sub-200-femtosecond pulse durations with peak powers in the kilowatt range. The aim of this review is to briefly describe the market potential and give an overview of the current status of mode-locked semiconductor disk lasers. Particular focus is placed on the ongoing efforts to achieve shorter pulses with higher peak powers.

关键词

Keywords

lasersmodelocked laserssemiconductor lasersultrafast lasersvertical emitting lasers

references

Keller U. Recent developments in compact ultrafast lasers.Nature2003;424: 831–838..

Fermann ME, Galvanauskas A, Sucha G.Ultrafast lasers: technology and applications. New York: Taylor&Francis, 2002.

Keller U, Weingarten KJ, Kärtner FX, Kopf D, Braun Bet al. Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers.IEEE J Sel Topics Quantum Electron1996;2: 435–453..

Keller U. Ultrafast solid-state laser oscillators: a success story for the last 20 years with no end in sight.Appl Phys B2010;100: 15–28..

Zehang S, Bebis G, Miller R. On-road vehicle detection: a review.IEEE Trans Pattern Anal Mach Intell2006;28: 694–711..

Boehm J. Natural user interface sensors for human body measurement.Int Arch Photogramm Remote Sens Spatial Inf Sci2012;XXXIX-B3: 531–536..

Bartels A, Heinecke D, Diddams SA. 10-GHz self-referenced optical frequency comb.Science2009;326: 681..

Klenner A, Golling M, Keller U. A gigahertz multimode-diode-pumped Yb: KGW enables a strong frequency comb offset beat signal.Opt Express2013;21: 7..

Klenner A, Golling M, Keller U. High peak power gigahertz Yb: CALGO laser.Opt Express2014;22: 11884–11891..

Williams KA, Thompson MG, White IH. Long-wavelength monolithic mode-locked diode lasers.New J Phys2004;6: 179..

Avrutin EA, Marsh JH, Portnoi EL. Monolithic and multi-gigahertz mode-locked semiconductor lasers: constructions, experiments, models and applications.IEEE Proc Optoelectron2000;147: 251–278..

Hohimer JP, Vawter GA. Passive mode locking of monolithic semiconductor ring lasers at 86 GHz.Appl Phys Lett1993;63: 1598–1600..

Bente E, Moskalenko V, Latkowski S, Tahvili S, Augustin Let al. Monolithically integrated InP-based modelocked ring laser systems. Proc. SPIE. 9134, Semiconductor Lasers and Laser Dynamics Ⅵ; 2014; 2014. p. 91340C.

Smit M, Leijtens X, Bente E, van der Tol J, Ambrosius Het al. Generic foundry model for InP-based photonics.IET Optoelectron2011;5: 187–194..

Nagarajan R, Joyner CH, Schneider RP, Bostak JS, Butrie Tet al. Large-scale photonic integrated circuits.IEEE J Sel Topics Quantum Electron2005;11: 50–65..

Lu ZG, Liu JR, Raymond S, Poole PJ, Barrios PJ,et al. 312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser.Opt Express2008;16: 10835–10840..

Rosales R, Kalosha VP, Posilović K, Miah MJ, Bimberg Det al. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime.Appl Phys Lett2014;105: 161101..

Koda R, Oki T, Kono S, Miyajima T, Watanabe Het al. 300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier.Appl Phys Express2012;5: 022702..

Balzer JC, Schlauch T, Klehr A, Erbert G, Tränkle Get al. High peak power pulses from dispersion optimised modelocked semiconductor laser.Electron Lett2013;49: 838–839..

Derickson DJ, Morton PA, Bowers JE, Thornton RL. Comparison of timing jitter in external and monolithic cavity mode-locked semiconductor lasers.Appl Phys Lett1991;59: 3372–3374..

Kuznetsov M, Hakimi F, Sprague R, Mooradian A. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams.IEEE Photon Technol Lett1997;9: 1063–1065..

Saraceno CJ, Emaury F, Schriber C, Diebold A, Hoffmann Met al. Toward millijoule-level high-power ultrafast thin-disk oscillators.IEEE J Sel Topics Quantum Electron2015;21: 1100318..

Maas DJHC, Bellancourt A-R, Rudin B, Golling M, Unold HJet al. Vertical integration of ultrafast semiconductor lasers.Appl Phys B2007;88: 493–497..

Bellancourt A-R, Maas DJHC, Rudin B, Golling M, Südmeyer T,et al. Modelocked integrated external-cavity surface emitting laser (MIXSEL).IET Optoelectron2009;3: 61–72..

Hoogland S, Dhanjal S, Tropper AC, Roberts SJ, Häring Ret al. Passively mode-locked diode-pumped surface-emitting semiconductor laser.IEEE Photon Technol Lett2000;12: 1135–1138..

Rudin B, Wittwer VJ, Maas DJHC, Hoffmann M, Sieber ODet al. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.Opt Express2010;18: 27582–27588..

Wilcox KG, Tropper AC, Beere HE, Ritchie DA, Kunert Bet al. 4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation.Opt Express2013;21: 1599–1605..

Klopp P, Griebner U, Zorn M, Weyers M. Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser.Appl Phys Lett2011;98: 071103–071103..

Quarterman AH, Wilcox KG, Apostolopoulos V, Mihoubi Z, Elsmere SPet al. A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses.Nature Photon2009;3: 729–731..

Lindberg H, Sadeghi M, Westlund M, Wang S, Larsson Aet al. Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber.Opt Lett2005;30: 2793–2795..

Garnache A, Hoogland S, Tropper AC, Sagnes I, Saint-Girons Get al. Sub-500-fs soliton pulse in a passively mode-locked broadband surface-emitting laser with 100-mW average power.Appl Phys Lett2002;80: 3892–3894..

Haring R, Paschotta R, Aschwanden A, Gini E, Morier-Genoud Fet al. High-power passively mode-locked semiconductor lasers.IEEE J Quantum Electron2002;38: 1268–1275..

Aschwanden A, Lorenser D, Unold HJ, Paschotta R, Gini Eet al. 2.1-W picosecond passively mode-locked external-cavity semiconductor laser.Opt Lett2005;30: 272–274..

Aschwanden A, Lorenser D, Unold HJ, Paschotta R, Gini Eet al. 10-GHz passively mode-locked surface emitting semiconductor laser with 1.4-W average output power.Appl Phys Lett2005;86: 131102..

Lorenser D, Maas DJHC, Unold HJ, Bellancourt A-R, Rudin Bet al. 50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power.IEEE J Quantum Electron2006;42: 838–847..

Klopp P, Saas F, Zorn M, Weyers M, Griebner U. 290-fs pulses from a semiconductor disk laser.Opt Express2008;16: 5770–5775..

Hoffmann M, Barbarin Y, Maas DJHC, Golling M, Krestnikov ILet al. Modelocked quantum dot vertical external cavity surface emitting laser.Appl Phys B2008;93: 733–736..

Wilcox KG, Mihoubi Z, Daniell GJ, Elsmere S, Quarterman Aet al. Ultrafast optical Stark mode-locked semiconductor laser.Opt Lett2008;33: 2797–2799..

Wilcox KG, Butkus M, Farrer I, Ritchie DA, Tropper Aet al. Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser.Appl Phys Lett2009;94: 3..

Klopp P, Griebner U, Zorn M, Klehr A, Liero Aet al. Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier.Opt Express2009;17: 10820–10834..

Wilcox KG, Quarterman AH, Beere H, Ritchie DA, Tropper AC. High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser.IEEE Photon Technol Lett2010;22: 1021–1023..

Aviles-Espinosa R, Filippidis G, Hamilton C, Malcolm G, Weingarten KJet al. Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms.Biomed Opt Express2011;2: 739–747..

Hoffmann M, Sieber OD, Wittwer VJ, Krestnikov IL, Livshits DAet al. Femtosecond high-power quantum dot vertical external cavity surface emitting laser.Opt Express2011;19: 8108–8116..

Sieber OD, Wittwer VJ, Mangold M, Hoffmann M, Golling Met al. Femtosecond VECSEL with tunable multi-gigahertz repetition rate.Opt Express2011;19: 23538–23543..

Scheller M, Wang TL, Kunert B, Stolz W, Koch SWet al. Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power.Electron Lett2012;48: 588–589..

Zaugg CA, Hoffmann M, Pallmann WP, Wittwer VJ, Sieber ODet al. Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach.Opt Express2012;20: 27915–27921..

Zaugg CA, Klenner A, Sieber OD, Golling M, Tilma BWet al. Sub-100 MHz passively modelocked VECSEL. CLEO: 2013; 2013; San Jose, CA; 2013. p. CW1G. 6.

Zaugg CA, Klenner A, Mangold M, Mayer AS, Link SMet al. Gigahertz self-referenceable frequency comb from a semiconductor disk laser.Opt Express2014;22: 16445–16455..

Wittwer VJ, Mangold M, Hoffmann M, Sieber OD, Golling Met al. High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation.Electron Lett2012;48: 1144–1145..

Mangold M, Wittwer VJ, Zaugg CA, Link SM, Golling Met al. Femtosecond pulses from a modelocked integrated external-cavity surface emitting laser (MIXSEL).Opt Express2013;21: 24904–24911..

Mangold M, Zaugg CA, Link SM, Golling M, Tilma BWet al. Pulse repetition rate scaling from 5 to 100 GHz with a high-power semiconductor disk laser.Opt Express2014;22: 6099–6107..

Zaugg CA, Gronenborn S, Moench H, Mangold M, Miller Met al. Absorber and gain chip optimization to improve performance from a passively modelocked electrically pumped vertical external cavity surface emitting laser.Appl Phys Lett2014;104: 121115..

Park SH, Kim J, Jeon H, Sakong T, Lee SNet al. Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme.Appl Phys Lett2003;83: 2121–2123..

Rahim M, Arnold M, Felder F, Behfar K, Zogg H. Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 µm wavelength.Appl Phys Lett2007;91: 151102..

Rahim M, Felder F, Fill M, Zogg H. Optically pumped 5 μm Ⅳ-Ⅵ VECSEL with Al-heat spreader.Opt Lett2008;33: 3010–3012..

Rahim M, Khiar A, Felder F, Fill M, Zogg Het al. 5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications.Appl Phys B2010;100: 261–264..

Tropper AC, Foreman HD, Garnache A, Wilcox KG, Hoogland SH. Vertical-external-cavity semiconductor lasers.J Phys D: Appl Phys2004;37: R75–R85..

Keller U, Tropper AC. Passively modelocked surface-emitting semiconductor lasers.Phys Rep2006;429: 67–120..

Schulz N, Hopkins JM, Rattunde M, Burns D, Wagner J. High-brightness long-wavelength semiconductor disk lasers.Laser Photon Rev2008;2: 160–181..

Calvez S, Hastie JE, Guina M, Okhotnikov OG, Dawson MD. Semiconductor disk lasers for the generation of visible and ultraviolet radiation.Laser Photon Rev2009;3: 407–434..

Kaneda Y, Yarborough JM, Li L, Peyghambarian N, Fan Let al. Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator.Opt Lett2008;33: 1705–1707..

Bek R, Kersteen G, Kahle H, Schwarzbäck T, Jetter Met al. All quantum dot mode-locked semiconductor disk laser emitting at 655>nm.Appl Phys Lett2014;105: 082107..

Bek R, Kahle H, Schwarzback T, Jetter M, Michler P. Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses.Appl Phys Lett2013;103: 242101..

Ranta S, Härkönen A, Leinonen T, Orsila L, Lyytikäinen Jet al. Mode-locked VECSEL emitting 5 ps pulses at 675 nm.Opt Lett2013;38: 2289–2291..

Wilcox KG, Mihoubi Z, Elsmere S, Quarterman A, Foreman HDet al. Passively modelocked 832 nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3 ps pulses at 1.9 GHz repetition rate.Electron Lett2008;44: 1469–1470..

Rautiainen J, Korpijärvi V-M, Puustinen J, Guina M, Okhotnikov OG. Passively mode-locked GaInNAs disk laser operating at 1220 nm.Opt Express2008;16: 15964–15969..

Rutz A, Liverini V, Maas DJHC, Rudin B, Bellancourt A-Ret al. Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3.Electron Lett2006;42: 926..

Rautiainen J, Lyytikainen J, Toikkanen L, Nikkinen J, Sirbu Aet al. 1.3-μm Mode-locked disk laser with wafer fused gain and SESAM structures.IEEE Photon Technol Lett2010;22: 748–750..

Hoogland S, Paldus B, Garnache A, Weingarten KJ, Grange Ret al. Picosecond pulse generation with a 1.5 µm passively modelocked surface emitting semiconductor laser.Electron Lett2003;39: 846..

Zhao Z, Bouchoule S, Song J, Galopin E, Harmand J-Cet al. Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL.Opt Lett2011;36: 4377–4379..

Härkönen A, Paajaste J, Suomalainen S, Alanko J-P, Grebing Cet al. Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2μm.Opt Lett2010;35: 4090–4092..

Härkönen A, Grebing C, Paajaste J, Koskinen R, Alanko J-Pet al. Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength.Electron Lett2011;47: 454–456..

Härkönen A, Rautiainen J, Orsila L, Guina M, Rößner Ket al. 2-µm Mode-locked semiconductor disk laser synchronously pumped using an amplified diode laser.IEEE Photon Technol Lett2008;20: 1332–1334..

Kemp AJ, Valentine GJ, Hopkins JM, Hastie JE, Smith SAet al. Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach.IEEE J Quantum Electon2005;41: 148–155..

Giesen A, Hügel H, Voss A, Wittig K, Brauch Uet al. Scalable concept for diode-pumped high-power solid-state lasers.Appl Phys B1994;58: 365–372..

Zhang F, Heinen B, Wichmann M, M̂ller C, Kunert Bet al. A 23-watt single-frequency vertical-external-cavity surface-emitting laser.Opt Express2014;22: 12817–12822..

Rudin B, Rutz A, Hoffmann M, Maas DJHC, Bellancourt A-Ret al. Highly efficient optically pumped vertical emitting semiconductor laser with more than 20-W average output power in a fundamental transverse mode.Opt Lett2008;33: 2719–2721..

Heinen B, Wang TL, Sparenberg M, Weber A, Kunert Bet al. 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser.Electron Lett2012;48: 516–517..

McInerney JG, Mooradian A, Lewis A, Shchegrov AV, Strzelecka EMet al. High-power surface emitting semiconductor laser with extended vertical compound cavity.Electron Lett2003;39: 523–525..

Zhao P, Xu B, van Leeuwen R, Chen T, Watkins Let al. Compact 4.7 W, 18.3% wall-plug efficiency green laser based on an electrically pumped VECSEL using intracavity frequency doubling.Opt Lett2014;39: 4766–4768..

Kreuter P, Witzigmann B, Maas DJHC, Barbarin Y, Südmeyer Tet al. On the design of electrically-pumped vertical-external-cavity surface-emitting lasers.Appl Phys B2008;91: 257–264..

Barbarin Y, Hoffmann M, Pallmann WP, Dahhan I, Kreuter Pet al. Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking.IEEE J Sel Topics Quantum Electron2011;17: 1779–1786..

Keller U, Miller DAB, Boyd GD, Chiu TH, Ferguson JFet al. Solid-state low-loss intracavity saturable absorber for Nd: YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber.Opt Lett1992;17: 505–507..

Spühler GJ, Weingarten KJ, Grange R, Krainer L, Haiml Met al. Semiconductor saturable absorber mirror structures with low saturation fluence.Appl Phys B2005;81: 27–32..

Maas DJHC, Rudin B, Bellancourt A-R, Iwaniuk D, Marchese SVet al. High precision optical characterization of semiconductor saturable absorber mirrors.Opt Express2008;16: 7571–7579..

Sieber OD, Hoffmann M, Wittwer VJ, Mangold M, Golling Met al. Experimentally verified pulse formation model for high-power femtosecond VECSELs.Appl Phys B2013;113: 133–145..

Grange R, Haiml M, Paschotta R, Spuhler GJ, Krainer Let al. New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers.Appl Phys B2005;80: 151–158..

Siegner U, Haiml M, Morier-Genoud F, Lutz RC, Specht Pet al. Femotsecond nonlinear optics of low-temperature grown semiconductors.Phys B1999;273–274: 733–736..

Haiml M, Siegner U, Morier-Genoud F, Keller U, Luysberg Met al. Optical nonlinearity in low-temperature-grown GaAs: microscopic limitations and optimization strategies.Appl Phys Lett1999;74: 3134–3136..

Haiml M, Siegner U, Morier-Genoud F, Keller U, Luysberg Met al. Femtosecond response times and high optical nonlinearity in Beryllium doped low-temperature grown GaAs.Appl Phys Lett1999;74: 1269–1271..

Liverini V, Schön S, Grange R, Haiml M, Zeller SCet al. A low-loss GaInNAs SESAM mode-locking a 1.3-µm solid-state laser.Appl Phys Lett2004;84: 4002–4004..

Lederer MJ, Luther-Davies B, Tan HH, Jagadish C, Haiml Met al. Nonlinear optical absorption and temporal response of Arsenic- and Oxygen-implanted GaAs.Appl Phys Lett1999;74: 1993–1995..

Tan HH, Jagadish C, Lederer MJ, Luther-Davies B, Zou Jet al. Role of implantation-induced defects on the response time of semiconductor saturable absorbers.Appl Phys Lett1999;75: 1437–1439..

Ostinelli O, Bächtold W, Haiml H, Grange R, Keller Uet al. Carrier lifetime reduction in 1.5μm AlGaAsSb saturable absorbers with air and AlAsSb barriers.Appl Phys Lett2006;89: 071114..

Mysyrowicz A, Hulin D, Antonetti A, Migus A. "Dresses excitons" in a multiple-quantum-well structure: evidence for an optical stark effect with femtosecond response time.Phys Rev Lett1986;56: 2748–2751..

Tsuda S, Knox WH, Cundiff ST, Jan WY, Cunningham JE. Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors.IEEE J Sel Topics Quantum Electron1996;2: 454–464..

Quarterman AH, Carswell S, Daniell GJ, Mihoubi Z, Wilcox KGet al. Numerical simulation of optical Stark effect saturable absorbers in mode-locked femtosecond VECSELs using a modified two-level atom model.Opt Express2011;19: 26783–26795..

Saraceno CJ, Heckl OH, Baer CRE, Golling M, Südmeyer Tet al. SESAMs for high-power femtosecond modelocking: power scaling of an Yb: LuScO3 thin disk laser to 23 W and 235 fs.Opt Express2011;19: 20288–20300..

Paschotta R, Häring R, Keller U, Garnache A, Hoogland Set al. Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers.Appl Phys B2002;75: 445–451..

Maas DJHC, Bellancourt AR, Hoffmann M, Rudin B, Barbarin Yet al. Growth parameter optimization for fast quantum dot SESAMs.Opt Express2008;16: 18646–18656..

Zaugg CA, Sun Z, Wittwer VJ, Popa D, Milana Set al. Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector.Opt Express2013;21: 31548–31559..

Husaini S, Bedford RG. Graphene saturable absorber for high power semiconductor disk laser mode-locking.Appl Phys Lett2014;104: 161107..

Kornaszewski L, Maker G, Malcolm GPA, Butkus M, Rafailov EUet al. SESAM-free mode-locked semiconductor disk laser.Laser Photon Rev2012;6: L20–L23..

Albrecht AR, Wang Y, Ghasemkhani M, Seletskiy DV, Cederberg JGet al. Exploring ultrafast negative Kerr effect for mode-locking vertical external-cavity surface-emitting lasers.Opt Express2013;21: 28801–28808..

Gaafar M, Möller C, Wichmann M, Heinen B, Kunert Bet al. Harmonic self-mode-locking of optically pumped semiconductor disc laser.Electron Lett2014;50: 542–543..

Moloney JV, Kilen I, Bäumner A, Scheller M, Koch SW. Nonequilibrium and thermal effects in mode-locked VECSELs.Opt Express2014;22: 6422–6427..

Spence DE, Evans JM, Sleat WE, Sibbett W. Regenerately initiated self-modelocked Ti: Sapphire laser.Optics Lett1991;16: 1762–1764..

Wilcox KG, Tropper AC. Comment on SESAM-free mode-locked semiconductor disk laser.Laser Photon Rev2013;7: 422–423..

Gaafar M, Richter P, Keskin H, Möller C, Wichmann Met al. Self-mode-locking semiconductor disk laser.Opt Express2014;22: 28390–28399..

Lorenser D, Unold HJ, Maas DJHC, Aschwanden A, Grange Ret al. Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers.Appl Phys B2004;79: 927–932..

Bellancourt A-R, Barbarin Y, Maas DJHC, Shafiei M, Hoffmann Met al. Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration.Opt Express2009;17: 9704–9711..

Wittwer VJ, Sieber OD, Mangold M, Hoffmann M, Saraceno CJet al. First MIXSEL with a quantum well saturable absorber: shorter pulse durations and higher repetition rates. CLEO US 2012; 2012; San Jose; 2012.

Berger JD, Anthon DW, Caprara A, Chilla JL, Govorkov SVet al. 20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm. Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) Ⅱ; 2012; 2012. p. 824206.

Hönninger C, Paschotta R, Morier-Genoud F, Moser M, Keller U. Q-switching stability limits of continuous-wave passive mode locking.J Opt Soc Am B1999;16: 46–56..

Saarinen EJ, Harkonen A, Herda R, Suomalainen S, Orsila Let al. Harmonically mode-locked VECSELs for multi-GHz pulse train generation.Opt Express2007;15: 955–964..

Hastie JE, Hopkins JM, Jeon CW, Calvez S, Burns Det al. Microchip vertical external cavity surface emitting lasers.Electron Lett2003;39: 1324–1326..

Laurand N, Lee CL, Gu E, Hastie JE, Calvez Set al. Microlensed microchip VECSEL.Opt Express2007;15: 9341–9346..

Wilcox KG, Quarterman AH, Beere HE, Ritchie DA, Tropper AC. Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz.Opt Express2011;19: 23453–23459..

Wilcox KG, Quarterman AH, Beere HE, Ritchie DA, Tropper AC. Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser.Appl Phys Lett2011;99: 131107..

Schlatter A, Rudin B, Zeller SC, Paschotta R, Spühler GJet al. Nearly quantum-noise-limited timing jitter from miniature Er: Yb: glass lasers.Opt Lett2005;30: 1536–1538..

Schilt S, Bucalovic N, Dolgovskiy V, Schori C, Stumpf MCet al. Fully stabilized optical frequency comb with sub-radian CEO phase noise from a SESAM-modelocked 1.5-µm solid-state laser.Opt Express2011;19: 24171–24181..

Hillerkuss D, Schmogrow R, Schellinger T, Jordan M, Winter Met al. 26 Tbit s−1line-rate super-channel transmission utilizing all-optical fast Fourier transform processing.Nat Photon2011;5: 364–371..

Wilcox KG, Foreman HD, Roberts JS, Tropper AC. Timing jitter of 897 MHz optical pulse train from actively stabilised passively modelocked surface-emitting semiconductor laser.Electron Lett2006;42: 159–160..

Quarterman AH, Wilcox KG, Elsmere SP, Mihoubi Z, Tropper AC. Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL.Electron Lett2008;44: 1135–1137..

Wittwer VJ, Zaugg CA, Pallmann WP, Oehler AEH, Rudin Bet al. Timing jitter characterization of a free-running SESAM mode-locked VECSEL.IEEE Photon J2011;3: 658–664..

Wittwer VJ, van der Linden R, Tilma BW, Resan B, Weingarten KJet al. Sub-60-fs timing jitter of a SESAM modelocked VECSEL.IEEE Photon J2012;5: 1400107..

Mangold M, Link SM, Klenner A, Zaugg CA, Golling Met al. Amplitude noise and timing jitter characterization of a high-power mode-locked integrated external-cavity surface emitting laser.IEEE Photon J2014;6: 1500309..

Klenner A, Schilt S, Şdmeyer T, Keller U. Gigahertz frequency comb from a diode-pumped solid-state laser.Opt Express2014;22: 31008–31019..

Paschotta R, Schlatter A, Zeller SC, Telle HR, Keller U. Optical phase noise and carrier-envelope offset noise of mode-locked lasers.Appl Phys B2006;82: 265–273..

Paschotta R, Telle HR, Keller U. Noise of Solid-State Lasers. In: Sennaroglu A (ed).Solid-state lasers and applications. Boca Raton: CRC Press Taylor and Francis Group 2007, pp 473–510.

Heck MJR, Salumbides EJ, Renault A, Bente EAJM, Oei Y-Set al. Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm.Opt Express2009;17: 18063–18075..

Chang-Yi L, Grillot F, Yan L, Raghunathan R, Lester LF. Microwave characterization and stabilization of timing jitter in a quantum-dot passively mode-locked laser via external optical feedback.IEEE J Sel Topics Quantum Electron2011;17: 1311–1317..

Drzewietzki L, Breuer S, Elsäfler W. Timing jitter reduction of passively mode-locked semiconductor lasers by self- and external-injection: numerical description and experiments.Opt Express2013;21: 16142–16161..

Telle HR, Steinmeyer G, Dunlop AE, Stenger J, Sutter DHet al. Carrier-envelope offset phase control: a novel concept for absolute optical frequency measurement and ultrashort pulse generation.Appl Phys B1999;69: 327–332..

Rodwell MJW, Bloom DM, Weingarten KJ. Subpicosecond laser timing stabilization.IEEE J Quantum Electron1989;25: 817–827..

Keller U, Li KD, Rodwell MJW, Bloom DM. Noise characterization of femtosecond fiber Raman soliton lasers.IEEE J Quantum Electron1989;25: 280–288..

Jones DJ, Diddams SA, Ranka JK, Stentz A, Windeler RSet al. Carrier-envelope phase control of femtosecond mode-locked lasers and direct optical frequency synthesis.Science2000;288: 635–639..

Washburn BR, Diddams SA, Newbury NR, Nicholson JW, Yan MFet al. Phase-locked, erbium-fiber-laser-based frequency comb in the near infrared.Opt Lett2004;29: 250–252..

Klenner A, Emaury F, Schriber C, Diebold A, Saraceno CJet al. Phase-stabilization of the carrier-envelope-offset frequency of a SESAM modelocked thin disk laser.Opt Express2013;21: 24770–24780..

Russell P. Photonic crystal fibers.Science2003;299: 358–362..

Quarterman AH, Hooper LE, Mosley PJ, Wilcox KG. Gigahertz pulse source by compression of mode-locked VECSEL pulses coherently broadened in the normal dispersion regime.Opt Express2014;22: 12096–12101..

Chamorovskiy A, Kerttula J, Rautiainen J, Okhotnikov OG. Supercontinuum generation with amplified 1.57 µm picosecond semiconductor disk laser.Electron Lett2012;48: 1010–1012..

Morioka T, Kawanishi S, Mori K, Saruwatari M. Nearly penalty-free,<4 ps supercontinuum Gbit/s pulse generation over 1535–1560 nm.Electron Lett1994;30: 790–791..

Hoffmann M, Schilt S, Südmeyer T. CEO stabilization of a femtosecond laser using a SESAM as fast opto-optical modulator.Opt Express2013;21: 30054–30064..

Dudley JM, Genty G, Coen S. Supercontinuum generation in photonic crystal fiber.Rev Mod Phys2006;78: 1135–1184..

Dudley JM, Coen S. Coherence properties of supercontinuum spectra generated in photonic crystal and tapered optical fibers.Opt Lett2002;27: 1180–1182..

Kopf D, Prasad A, Zhang G, Moser M, Keller U. Broadly tunable femtosecond Cr: LiSAF laser.Optics Lett1997;22: 621–623..

Keller U. Ultrafast solid-state lasers. In: Herziger G, Weber H, Proprawe R (eds).Landolt-Börnstein. Laser physics and applications. Subvolume B: laser systems. Part I., vol. 1, Group Ⅷ. Springer Verlag: Heidelberg, 2007, pp 33–167.

Kim KS, Yoo J, Kim G, Lee S, Cho Set al. 920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature.IEEE Photon Technol Lett2007;19: 1655–1657..

Hader J, Wang TL, Yarborough JM, Dineen CA, Kaneda Yet al. VECSEL optimization using microscopic many-body physics.IEEE J Sel Topics Quantum Electron2011;17: 1753–1762..

Demaria F, Lorch S, Menzel S, Riedl MC, Rinaldi Fet al. Design of highly efficient high-power optically pumped semiconductor disk lasers.IEEE J Sel Topics Quantum Electron2009;15: 973–977..

Ranta S, Tavast M, Leinonen T, Lieu NV, Fetzer Get al. 1180 nm VECSEL with output power beyond 20 W.Electron Lett2013;49: 59–60..

Kühn E, Thränhardt A, Bückers C, Koch SW, Hader Jet al. Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers.J Appl Phys2009;106: 063105..

Lin GR, Liu TA, Pan CL. Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperatures.Jpn J Appl Phys2001;40: 6239–6242..

Mangold M, Wittwer VJ, Sieber OD, Hoffmann M, Krestnikov ILet al. VECSEL gain characterization.Opt Express2012;20: 4136–4148..

Geske J, Gan KG, Okuno YL, Piprek J, Bowers JE. Vertical-cavity surface-emitting laser active regions for enhanced performance with optical pumping.IEEE J Quantum Electron2004;40: 1155–1162..

Kilen I, Hader J, Moloney JV, Koch SW. Ultrafast nonequilibrium carrier dynamics in semiconductor laser mode locking.Optica2014;1: 192–197..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Four-dimensional light shaping: manipulating ultrafast spatiotemporal foci in space and time

Two-color multiphoton in vivo imaging with a femtosecond diamond Raman laser

A Ⅲ-Ⅴ-on-Si ultra-dense comb laser