Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'

Yang Mei; Guo-En Weng; Bao-Ping Zhang; Jian-Ping Liu; Werner Hofmann; Lei-Ying Ying; Jiang-Yong Zhang; Zeng-Cheng Li; Hui Yang; Hao-Chung Kuo

doi:10.1038/lsa.2016.199

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Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'

Original Articles

- Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'
- Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'
- LSA 2017年6卷第1期
- Affiliations：
  
  1.Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University, Xiamen, Fujian 361005, China
  2.Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
  3.Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
  4.School of Solid State Physics, Technical University of Berlin, Berlin 10623, Germany
  5.Department of Photonics and Institute of Electro-optical Engineering, Taiwan Chiao Tung University
- Author bio：
  
  BP Zhang, Email: bzhang@xmu.edu.cn
  JP Liu, Email: jpliu2010@sinano.ac.cn
- Funds：
- DOI：10.1038/lsa.2016.199
  中图分类号：
- 纸质出版日期：2017-03，
  
  网络出版日期：2016-08-19，
  
  收稿日期：2016-04-22，
  
  修回日期：2016-08-11，
  
  录用日期：2016-08-11
- Accepted：
Scan QR Code
Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'[J]. LSA, 2017,6(1).

Mei, Y. et al. Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'. Light: Science & Applications, 6, e16199 (2017).
Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'[J]. LSA, 2017,6(1). DOI： 10.1038/lsa.2016.199.

Mei, Y. et al. Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'. Light: Science & Applications, 6, e16199 (2017). DOI： 10.1038/lsa.2016.199.

摘要

Abstract

Semiconductor vertical-cavity surface-emitting lasers (VCSELs) with wavelengths from 491.8 to 565.7 nm

covering most of the 'green gap'

are demonstrated. For these lasers

the same quantum dot (QD) active region was used

whereas the wavelength was controlled by adjusting the cavity length

which is difficult for edge-emitting lasers. Compared with reports in the literature for green VCSELs

our lasers have set a few world records for the lowest threshold

longest wavelength and continuous-wave (CW) lasing at room temperature. The nanoscale QDs contribute dominantly to the low threshold. The emitting wavelength depends on the electron–photon interaction or the coupling between the active layer and the optical field

which is modulated by the cavity length. The green VCSELs exhibit a low-thermal resistance of 915 kW

−1

which benefits the CW lasing. Such VCSELs are important for small-size

low power consumption full-color displays and projectors.

关键词

Keywords

GaNInGaNquantum dotvertical-cavity surface-emitting laserwide-gap semiconductor

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