Optical second-harmonic generation measurement for probing organic device operation

Takaaki Manaka; Mitsumasa Iwamoto

doi:10.1038/lsa.2016.40

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Optical second-harmonic generation measurement for probing organic device operation

Review

- Optical second-harmonic generation measurement for probing organic device operation
- Optical second-harmonic generation measurement for probing organic device operation
- LSA 2016年5卷第2期
- Affiliations：
  
  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
- Author bio：
  
  T Manaka, Email: manaka@ome.pe.titech.ac.jp
- Funds：
- DOI：10.1038/lsa.2016.40
  中图分类号：
- 纸质出版日期：2016-06，
  
  网络出版日期：2015-11-12，
  
  收稿日期：2015-04-17，
  
  修回日期：2015-11-11，
  
  录用日期：2015-11-12
- Accepted：
Scan QR Code
Optical second-harmonic generation measurement for probing organic device operation[J]. LSA, 2016,5(2).

Manaka, T. & Iwamoto, M. Optical second-harmonic generation measurement for probing organic device operation. Light: Science & Applications, 5, e16040 (2016).
Optical second-harmonic generation measurement for probing organic device operation[J]. LSA, 2016,5(2). DOI： 10.1038/lsa.2016.40.

Manaka, T. & Iwamoto, M. Optical second-harmonic generation measurement for probing organic device operation. Light: Science & Applications, 5, e16040 (2016). DOI： 10.1038/lsa.2016.40.

摘要

Abstract

We give a brief overview of the electric-field induced optical second-harmonic generation (EFISHG) technique that has been used to study the complex behaviors of organic-based devices. By analyzing EFISHG images of organic field-effect transistors

the in-plane two-dimensional distribution of the electric field in the channel can be evaluated. The susceptibility tensor of the organic semiconductor layer and the polarization of the incident light are considered to determine the electric field distribution. EFISHG imaging can effectively evaluate the distribution of the vectorial electric field in organic films by selecting a light polarization. With the time-resolved technique

measurement of the electric field originating from the injected carriers allows direct probing of the carrier motion under device operation

because the transient change of the electric field distribution reflects the carrier motion. Some applications of the EFISHG technique to organic electronic devices are reviewed.

关键词

Keywords

electric fieldoptical second-harmonic generationsemiconductor device

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