Interfacial amplification for graphene-based position-sensitive-detectors

Wen-Hui Wang; Ru-Xia Du; Xi-Tao Guo; Jie Jiang; Wei-Wei Zhao; Zhong-Hua Ni; Xin-Ran Wang; Yu-Meng You; Zhen-Hua Ni

doi:10.1038/lsa.2017.113

Go to Nature Website

Your Location：

Home >

Browse articles >

Interfacial amplification for graphene-based position-sensitive-detectors

Letter

- Interfacial amplification for graphene-based position-sensitive-detectors
- Interfacial amplification for graphene-based position-sensitive-detectors
- LSA 2017年6卷第4期
- Affiliations：
  
  1.State Key Laboratory of Bioelectronics, School of Physics, Southeast University, Nanjing 211189, China
  2.Department of Basic Teaching, Nanjing Tech University Pujiang Institute, Nanjing 211134, China
  3.Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189, China
  4.National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  5.Ordered Matter Science Research Center, School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
- Author bio：
  
  Z-H Ni, Email: zhni@seu.edu.cn
- Funds：
- DOI：10.1038/lsa.2017.113
  中图分类号：
- 纸质出版日期：2017-12，
  
  网络出版日期：2017-09-30，
  
  收稿日期：2017-02-12，
  
  修回日期：2017-07-21，
  
  录用日期：2017-07-26
- Accepted：
Scan QR Code
Interfacial amplification for graphene-based position-sensitive-detectors[J]. LSA, 2017,6(4).

Wang, W. H. et al. Interfacial amplification for graphene-based position-sensitive-detectors. Light: Science & Applications, 6, e17113 (2017).
Interfacial amplification for graphene-based position-sensitive-detectors[J]. LSA, 2017,6(4). DOI： 10.1038/lsa.2017.113.

Wang, W. H. et al. Interfacial amplification for graphene-based position-sensitive-detectors. Light: Science & Applications, 6, e17113 (2017). DOI： 10.1038/lsa.2017.113.

摘要

Abstract

关键词

Keywords

references

Arimoto S, Yamamoto H, Ohno H, Hasegawa H. Hydrogenated amorphous silicon position sensitive detector.J Appl Phys1984;57: 4778–4782..

Lucovsky G. Photoeffects in nonuniformly irradiatedp-njunctions.J Appl Phys1960;31: 1088–1095..

Fortunato E, Lavareda G, Vieira M, Martins R. Thin film position sensitive detector based on amorphous siliconp-i-ndiode.Rev Sci Instrum1994;65: 3784–3786..

Martins R, Fortunato E. Lateral photoeffect in large area one-dimensional thin-film position-sensitive detectors based ina-Si: HP-I-Ndevices.Rev Sci Instrum1995;66: 2927–2934..

Vieira M. Speed photodetectors based on amorphous and microcrystalline silicon p-i-n devices.Appl Phys Lett1997;70: 220–222..

Levine BF, WillensRH, Bethea CG, Brasen D. Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate.Appl Phys Lett1986;49: 1537–1539..

Xiao SQ, Wang H, Zhao ZC, Gu YZ, Xia YXet al. The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide- semiconductor structures.Opt Express2008;16: 3798–3806..

Henry J, Livingstone J. Optimizing the wavelength response in one-dimensional p-Si Schottky barrier optical PSDs.Phys Status Solidi A2011;208: 1718–1725..

Yu CQ, Wang H, Xia YX. Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si.Appl Phys Lett2009;95: 263506..

Fontein PF, Hendrikst P, Woltert JH, Kucernakg A, Peat Ret al. Differential measurements of the lateral photoeffect in GaAs/AlGaAs heterostructures.Semicond Sci Technol1989;4: 837–840..

Youngblood N, Chen C, Koester SJ, Li M. Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current.Nat Photonics2015;9: 247–252..

Gan XT, Shiue RJ, Gao YD, Meric I, Heinz TFet al. Chip-integrated ultrafast graphene photodetector with high responsivity.Nat Photonics2013;7: 883–887..

Schroder DK. Surface voltage and surface photovoltage: History, theory and applications.Meas Sci Technol2001;12: R16–R31..

Guo XT, Wang WH, Nan HY, Yu YF, Jiang Jet al. High-performance graphene photodetector using interfacial gating.Optica2016;3: 1066–1070..

Konstantatos G, Badioli M, Gaudreau L, Osmond J, Bernechea Met al. Hybrid graphene-quantum dot phototransistors with ultrahigh gain.Nat Nanotechnol2012;7: 363–368..

Liu YD, Wang FQ, Wang XM, Wang XZ, Flahaut Eet al. Planar carbon nanotube-graphene hybrid films for high-performance broadband photodetectors.Nat Commun2015;6: 8589..

Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Yet al. Electric field effect in atomically thin carbon films.Science2004;306: 666–669..

Novoselov KS, Geim AK, Morozov SV, Jiang D, Katsnelson MIet al. Two-dimensional gas of massless Dirac fermions in graphene.Nature2005;438: 197–200..

Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A. Single-layer MoS2transistors.Nat Nanotechnol2011;6: 147–150..

Shyam R, Kulkarni DD, Field DA, Srinadhu ES, Harriss JEet al. Encapsulating Ion-solid interactions in metal-oxide-semiconductor (MOS) devices.IEEE Trans Nucl Sci2015;62: 3346–3352..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据