Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm

Neetesh Singh; Ming Xin; Diedrik Vermeulen; Katia Shtyrkova; Nanxi Li; Patrick T Callahan; Emir Salih Magden; Alfonso Ruocco; Nicholas Fahrenkopf; Christopher Baiocco; Bill P-P Kuo; Stojan Radic; Erich Ippen; Franz X Kärtner; Michael R Watts

doi:10.1038/lsa.2017.131

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Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm

Original Articles

- Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm
- Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm
- LSA 2018年7卷第1期
- Affiliations：
  
  1.Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
  2.John A. Paulson School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA
  3.College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY 12203, USA
  4.Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92039, USA
  5.Centre for Free Electron Laser Science (CFEL)-DESY and University of Hamburg, Hamburg 22607, Germany
- Author bio：
  
  N Singh, Email: neeteshs@mit.edu
- Funds：
- DOI：10.1038/lsa.2017.131
  中图分类号：
- 纸质出版日期：2018，
  
  网络出版日期：2018-01-26，
  
  收稿日期：2017-07-02，
  
  修回日期：2017-08-31，
  
  录用日期：2017-09-01
- Accepted：
Scan QR Code
Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm[J]. LSA, 2018,7(1):17131-8.

Singh, N. et al. Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06μm to beyond 2.4μm. Light: Science & Applications, 1, 17131 (2018).
Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm[J]. LSA, 2018,7(1):17131-8. DOI： 10.1038/lsa.2017.131.

Singh, N. et al. Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06μm to beyond 2.4μm. Light: Science & Applications, 1, 17131 (2018). DOI： 10.1038/lsa.2017.131.

摘要

Abstract

Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon

however

much nonlinear research is shifting towards unconventional photonics platforms. In this work

we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy

the generated signal spans the wavelength range from the edge of the silico

n transmission window

approximately 1.06 to beyond 2.4 μm

with a −20 dB bandwidth covering 1.124–2.4 μm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (−35 dB bandwidth). We also measured the coherence over an octave

obtaining

$$ \left| {g_{12}^{\left( 1 \right)}\left( \lambda \right)} \right| > 90\% $$

in good agreement with the simulations. In addition

we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications. This research paves the way for applications

such as chip-scale precision spectroscopy

optical coherence tomography

optical frequency metrology

frequency synthesis and wide-band wavelength division multiplexing in the telecom window.

关键词

Keywords

coherenceintegrated photonicssiliconsupercontinuum

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