Thermally stimulated exciton emission in Si nanocrystals

Elinore MLD de Jong; Huub Rutjes; Jan Valenta; M Tuan Trinh; Alexander N Poddubny; Irina N Yassievich; Antonio Capretti; Tom Gregorkiewicz

doi:10.1038/lsa.2017.133

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Thermally stimulated exciton emission in Si nanocrystals

Original Articles

- Thermally stimulated exciton emission in Si nanocrystals
- Thermally stimulated exciton emission in Si nanocrystals
- LSA 2018年7卷第1期
- Affiliations：
  
  1.Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH, Amsterdam, The Netherlands
  2.Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic
  3.Department of Electrical Engineering and Computer Science, University of Michigan, 2200 Bonisteel Blvd, Ann Arbor, MI 48109, USA
  4.Ioffe Institute, Russian Academy of Sciences, 26 Polytechnicheskaya, 194021 St Petersburg, Russia
- Author bio：
  
  EMLD de Jong, Email: E.M.L.D.deJong@uva.nl
- Funds：
- DOI：10.1038/lsa.2017.133
  中图分类号：
- 纸质出版日期：2018，
  
  网络出版日期：2018-01-26，
  
  收稿日期：2017-04-27，
  
  修回日期：2017-09-14，
  
  录用日期：2017-09-15
- Accepted：
Scan QR Code
Thermally stimulated exciton emission in Si nanocrystals[J]. LSA, 2018,7(1):17133-7.

de Jong, E. M. L. D. et al. Thermally stimulated exciton emission in Si nanocrystals. Light: Science & Applications, 1, 17133 (2018).
Thermally stimulated exciton emission in Si nanocrystals[J]. LSA, 2018,7(1):17133-7. DOI： 10.1038/lsa.2017.133.

de Jong, E. M. L. D. et al. Thermally stimulated exciton emission in Si nanocrystals. Light: Science & Applications, 1, 17133 (2018). DOI： 10.1038/lsa.2017.133.

摘要

Abstract

Increasing temperature is known to quench the excitonic emission of bulk silicon

which is due to thermally induced dissociation of excitons. Here

we demonstrate that the effect of temperature on the excitonic emission is reversed for quantum-confined silicon nanocrystals. Using laser-induced heating of silicon nanocrystals embedded in SiO

we achieved a more than threefold (

300%) increase in the radiative (photon) emission rate. We theoretically mod

eled the observed enhancement in terms of the thermally stimulated effect

taking into account the massive phonon production under intense illumination. These results elucidate one more important advantage of silicon nanostructures

illustrating that their optical properties can be influenced by temperature. They also provide an important insight into the mechanisms of energy conversion and dissipation in ensembles of silicon nanocrystals in solid matrices. In practice

the radiative rate enhancement under strong continuous wave optical pumping is relevant for the possible application of silicon nanocrystals for spectral conversion layers in concentrator photovoltaics.

关键词

Keywords

micro-photoluminescencenanocrystaloptical spectroscopysiliconthermal

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