Near-infrared and mid-infrared semiconductor broadband light emitters

Chun-Cai Hou; Hong-Mei Chen; Jin-Chuan Zhang; Ning Zhuo; Yuan-Qing Huang; Richard A Hogg; David TD Childs; Ji-Qiang Ning; Zhan-Guo Wang; Feng-Qi Liu; Zi-Yang Zhang

doi:10.1038/lsa.2017.170

Go to Nature Website

Your Location：

Home >

Browse articles >

Near-infrared and mid-infrared semiconductor broadband light emitters

Original Articles

- Near-infrared and mid-infrared semiconductor broadband light emitters
- Near-infrared and mid-infrared semiconductor broadband light emitters
- LSA 2018年7卷第2期
- Affiliations：
  
  1.Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  2.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  3.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  4.School of Engineering, The University of Glasgow, Glasgow G12 8LT, UK
  5.Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- Author bio：
  
  ZY Zhang, Email: zyzhang2014@sinano.ac.cn
- Funds：
- DOI：10.1038/lsa.2017.170
  中图分类号：
- 纸质出版日期：2018，
  
  网络出版日期：2018-03-23，
  
  收稿日期：2017-06-23，
  
  修回日期：2017-11-29，
  
  录用日期：2017-12-02
- Accepted：
Scan QR Code
Near-infrared and mid-infrared semiconductor broadband light emitters[J]. LSA, 2018,7(2):17170-7.

Hou, C. C. et al. Near-infrared and mid-infrared semiconductor broadband light emitters. Light: Science & Applications, 2, 17170 (2018).
Near-infrared and mid-infrared semiconductor broadband light emitters[J]. LSA, 2018,7(2):17170-7. DOI： 10.1038/lsa.2017.170.

Hou, C. C. et al. Near-infrared and mid-infrared semiconductor broadband light emitters. Light: Science & Applications, 2, 17170 (2018). DOI： 10.1038/lsa.2017.170.

摘要

Abstract

Semiconductor broadband light emitters have emerged as ideal and vital light sources for a range of biomedical sensing/imaging applications

especially for optical coherence tomography systems. Although near-infrared broadband light emitters have found increasingly wide utilization in these imaging applications

the requirement to simultaneously achieve both a high spectral bandwidth and output power is still challenging for such devices. Owing to the relatively weak amplified spontaneous emission

as a consequence of the very short non-radiative carrier lifetime of the inter-subband transitions in quantum cascade structures

it is even more challenging to obtain desirable mid-infrared broadband light emitters. There have been great efforts in the past 20 years to pursue high-efficiency broadband optical gain and very low reflectivity in waveguide structures

which are two key factors determining the performance of broadband light emitters. Here we describe the realization of a high continuous wave light power of > 20 mW and broadband width of > 130 nm with near-infrared broadband light emitters and the first mid-infrared broadband light emitters operating under continuous wave mode at room temperature by employing a modulation p-doped InGaAs/GaAs quantum dot active region with a 'J'-shape ridge waveguide structure and a quantum cascade active region with a dual-end analogous monolithic integrated tapered waveguide structure

respectively. This work is of great importance to improve the performance of existing near-infrared optical coherence tomography systems and describes a major advance toward reliable and cost-effective mid-infrared imaging and sensing systems

which do not presently exist due to the lack of appropriate low-coherence mid-infrared semiconductor broadband light sources.

关键词

Keywords

broadband light emittersoptical coherence tomographyquantum cascade structurequantum dot

references

Huang D, Swanson EA, Lin CP, Schuman JS, Stinson WGet al. Optical coherence tomography.Science1991;254: 1178–81..

Adler DC, Chen Y, Huber R, Schmitt J, Connolly Jet al. Three-dimensional endomicroscopy using optical coherence tomography.Nat Photonics2007;1: 709–16..

Greenwood PDL, Childs DTD, Kennedy K, Groom KM, Hugues Met al. Quantum dot superluminescent diodes for optical coherence tomography: device engineering.IEEE J Sel Top Quantum Electron2010;16: 1015–22..

Argyris A, Syvridis D, Larger L, Annovazzi-Lodi V, Colet Pet al. Chaos-based communications at high bit rates using commercial fibre-optic links.Nature2005;438: 343–6..

Fujimoto JG, Pitris C, Boppart SA, Brezinski ME. Optical coherence tomography: an emerging technology for biomedical imaging and optical biopsy.Neoplasia2000;2: 9–25..

Fujimoto JG. Optical coherence tomography for ultrahigh resolutionin vivoimaging.Nat Biotechnol2003;21: 1361–7..

Ozaki N, Childs DTD, Sarma J, Roberts TS, Yasuda Tet al. Superluminescent diode witha broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source.J Appl Phys2016;119: 083107..

Zhang ZY, Hogg RA, Lv XQ, Wang ZG. Self-assembled quantum-dot superluminescent light-emitting diodes.Adv Opt Photonics2010;2: 201–28..

Drexler W. Ultrahigh-resolution optical coherence tomography.J Biomed Opt2004;9: 47–74..

Ko TH, Adler DC, Fujimoto JG, Mamedov D, Prokhorov Vet al. Ultrahigh resolution optical coherence tomography imaging with a broadband superluminescent diode light source.Opt Express2004;12: 2112–9..

Barth A. Infrared spectroscopy of proteins.Biochim Biophys Acta2007;1767: 1073–101..

Seddon AB. Mid-infrared (IR)—a hot topic: the potential for using mid-IR light for non-invasive early detection of skin cancerin vivo.Phys Status Solidi (B)2013;250: 1020–7..

López-Lorente ÁI, Mizaikoff B. Mid-infrared spectroscopy for protein analysis: potential and challenges.Anal Bioanal Chem2016;408: 2875–89..

Jackson SD. Towards high-power mid-infrared emission from a fibre laser.Nat Photonics2012;6: 423–31..

Babushkin I, Tajalli A, Sayinc H, Morgner U, Steinmeyer Get al. Simple route toward efficient frequency conversion for generation of fully coherent supercontinua in the mid-IR and UV range.Light Sci Appl2017;6: e16218; doi:10.1038/lsa.2016.218..

Petersen CR, Møller U, Kubat I, Zhou BB, Dupont Set al. Mid-infrared supercontinuum covering the 1.4–13.3-μm molecular fingerprint region using ultra-high NA chalcogenide step-index fibre.Nat Photonics2014;8: 830–4..

Zheng MC, Aung NL, Basak A, Liu PQ, Wang XJet al. High power spiral cavity quantum cascade superluminescent emitter.Opt Express2015;23: 2713–9..

Zhang ZY, Wang ZG, Xu B, Jin P, Sun ZZet al. High-performance quantum-dot superluminescent diodes.IEEE Photonics Technol Lett2004;16: 27–9..

Lin CF, Juang CS. Superluminescent diodes with bent waveguide.IEEE Photonics Technol Lett1996;8: 206–8..

Rossetti M, Markus A, Fiore A, Occhi L, Velez C. Quantum dot superluminescent diodes emitting at 1.3 μm.IEEE Photonics Technol Lett2005;17: 540–2..

Aung NL, Yu Z, Yu Y, Liu PQ, Wang XJet al. High peak power (≥10 mW) quantum cascade superluminescent emitter.Appl Phys Lett2014;105: 221111..

Zibik EA, Ng WH, Revin DG, Wilson LR, Cockburn JWet al. Broadband 6-μm<λ<8-μm superluminescent quantum cascade light-emitting diodes.Appl Phys Lett2006;88: 121109..

Becker C, Sirtori C. Lateral current spreading in unipolar semiconductor lasers.J Appl Phys2001;90: 1688–91..

Rossetti M, Li L, Fiore A, Occhi L, Velez Cet al. High-power quantum-dot superluminescent diodes with p-doped active region.IEEE Photonics Technol Lett2006;18: 1946–8..

Nilsson HH, Zhang JZ, Galbraith I. Enhancement and reduction of line broadening due to Auger scattering in modulation-doped InGaAs/GaAs quantum dot devices.Appl Phys Lett2007;91: 161113..

Gündoğdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Ultrafast electron capture intop-modulation-doped quantum dots.Appl Phys Lett2004;85: 4570–2..

Zhang ZY, Luxmoore IJ, Jin CY, Liu HY, Jiang Qet al. Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes.Appl Phys Lett2007;91: 081112..

Liang JH, Maruyama T, Ogawa Y, Kobayashi S, Sonoda Jet al. (eds)High-Power High-Efficiency Superluminescent Diodes with J-Shaped Ridge Waveguide StructureProceedings of the 14th Indium Phosphide and Related Materials Conference. IEEE: Stockholm, Sweden. 2002..

Gmachl C, Sivco DL, Colombelli R, Capasso F, Cho AY. Ultra-broadband semiconductor laser.Nature2002;415: 883–7..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据