Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy

Da-Bing Li; Xiao-Juan Sun; Yu-Ping Jia; Mark I Stockman; Hari P Paudel; Hang Song; Hong Jiang; Zhi-Ming Li

doi:10.1038/lsa.2017.38

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Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy

Original Articles

- Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy
- Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy
- LSA 2017年6卷第3期
- Affiliations：
  
  1.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  2.Center for Nano-Optics (CeNO) and Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30340, USA
- Author bio：
  
  DB Li, Email: lidb@ciomp.ac.cn
  XJ Sun, Email: sunxj@ciomp.ac.cn
- Funds：
- DOI：10.1038/lsa.2017.38
  中图分类号：
- 纸质出版日期：2017-09，
  
  网络出版日期：2017-03-08，
  
  收稿日期：2017-01-31，
  
  修回日期：2017-03-06，
  
  录用日期：2017-03-06
- Accepted：
Scan QR Code
Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy[J]. LSA, 2017,6(3).

Li, D. B. et al. Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy. Light: Science & Applications, 6, e17038 (2017).
Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy[J]. LSA, 2017,6(3). DOI： 10.1038/lsa.2017.38.

Li, D. B. et al. Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy. Light: Science & Applications, 6, e17038 (2017). DOI： 10.1038/lsa.2017.38.

摘要

Abstract

A surface plasmon (SP) is a fundamental excitation state that exists in metal nanostructures. Over the past several years

the performance of optoelectronic devices has been improved greatly via the SP enhancement effect. In our previous work

the responsivity of GaN ultraviolet detectors was increased by over 30 times when using Ag nanoparticles. However

the physics of the SP enhancement effect has not been established definitely because of the lack of experimental evidence. To reveal the physical origin of this enhancement

Kelvin probe force microscopy (KPFM) was used to observe the SP-induced surface potential reduction in the vicinity of Ag nanoparticles on a GaN epilayer. Under ultraviolet illumination

the localized field enhancement induced by the SP forces the photogenerated electrons to drift close to the Ag nanoparticles

leading to a reduction of the surface potential around the Ag nanoparticles on the GaN epilayer. For an isolated Ag nanoparticle with a diameter of ~200 nm

the distribution of the SP localized field is located within 60 nm of the boundary of the Ag nanoparticle. For a dimer of Ag nanoparticles

the localized field enhancement between the nanoparticles was the strongest. The results presented here provide direct experimental proof of the localized field enhancement. These results not only explain the high performance of GaN detectors observed with the use of Ag nanoparticles but also reveal the physical mechanism of SP enhancement in optoelectronic devices

which will help us further understand and improve the performance of SP-based optoelectronic devices in the future.

关键词

Keywords

detectorGaNKPFMplasmon

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