Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices

Kaixin Guo; Xu Wang; Rongfen Zhang; Zhao Fu; Liangyu Zhang; Guobin Ma; Chaoyong Deng

doi:10.1038/s41377-021-00644-0

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Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices

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- Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices
- Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices
- LSA 2021年10卷第11期页码：2153-2160
- Affiliations：
  
  1.Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
  2.Guizhou College of Electronic Science and Technology, Guiyang, 561113, Guizhou, China
- Author bio：
  
  Chaoyong Deng (cydeng@gzu.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00644-0
  中图分类号：
- 纸质出版日期：2021-11-30，
  
  网络出版日期：2021-09-26，
  
  收稿日期：2021-04-09，
  
  修回日期：2021-08-18，
  
  录用日期：2021-09-10
- Accepted：
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Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices[J]. LSA, 2021,10(11):2153-2160.

Guo, K. X. et al. Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices. Light: Science & Applications, 10, 2153-2160 (2021).
Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices[J]. LSA, 2021,10(11):2153-2160. DOI： 10.1038/s41377-021-00644-0.

Guo, K. X. et al. Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices. Light: Science & Applications, 10, 2153-2160 (2021). DOI： 10.1038/s41377-021-00644-0.

摘要

Abstract

Multiferroics are being studied increasingly in applications of photovoltaic devices for the carrier separation driven by polarization and magnetization. In this work

textured black silicon photovoltaic devices are fabricated with Bi

1.6

0.2

/Bi

FeCrO

(BFCNT/BFCO) multiferroic heterojunction as an absorber and graphene as an anode. The structural and optical analyses showed that the bandgap of Aurivillius-typed BFCNT and double perovskite BFCO are 1.62 ± 0.04 eV and 1.74 ± 0.04 eV respectively

meeting the requirements for the active layer in solar cells. Under the simulated AM 1.5 G illumination

the black silicon photovoltaic devices delivered a photoconversion efficiency (

) of 3.9% with o

pen-circuit voltage (

)

short-circuit current density (

)

and fill factor (

) of 0.75 V

10.8 mA cm

−2

and 48.3%

respectively. Analyses of modulation of an applied electric and magnetic field on the photovoltaic properties revealed that both polarization and magnetization of multiferroics play an important role in tuning the built-in electric field and the transport mechanisms of charge carriers

thus providing a new idea for the design of future high-performance multiferroic oxide photovoltaic devices.

关键词

Keywords

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