Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments

Alexander Mittelstädt; Andrei Schliwa; Petr Klenovský

doi:10.1038/s41377-021-00700-9

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Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments

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- Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments
- Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments
- LSA 2022年11卷第1期页码：13-26
- Affiliations：
  
  1.Institute for Solid State Physics, Technical University of Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany
  2.Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 267/2, 61137 Brno, Czech Republic
  3.Czech Metrology Institute, Okružní 31, 63800 Brno, Czech Republic
- Author bio：
  
  Andrei Schliwa (andrei.schliwa@tu-berlin.de)
- Funds：
- DOI：10.1038/s41377-021-00700-9
  中图分类号：
- 纸质出版日期：2022-01-31，
  
  网络出版日期：2022-01-17，
  
  收稿日期：2021-04-06，
  
  修回日期：2021-11-05，
  
  录用日期：2021-12-16
- Accepted：
Scan QR Code
Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments[J]. LSA, 2022,11(1):13-26.

Mittelstädt, A., Schliwa, A. & Klenovský, P. Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments. Light: Science & Applications, 11, 13-26 (2022).
Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments[J]. LSA, 2022,11(1):13-26. DOI： 10.1038/s41377-021-00700-9.

Mittelstädt, A., Schliwa, A. & Klenovský, P. Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots—selected recent developments. Light: Science & Applications, 11, 13-26 (2022). DOI： 10.1038/s41377-021-00700-9.

摘要

Abstract

Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band

k·p

method

which we benchmark by direct comparison to the empirical tight-binding algorithm

and we also discuss the newly developed "linear combination of quantum dot orbitals" method. Furthermore

we focus on two major complexes: First

the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In

1−

/GaP QDs

and second

the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.

关键词

Keywords

references

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