Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor

Luca Sortino; Merve Gülmüs; Benjamin Tilmann; Leonardo de S. Menezes; Stefan A. Maier

doi:10.1038/s41377-023-01249-5

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Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor

Original Articles

- Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor
- Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor
- LSA 2023年12卷第9期页码：1911-1920
- Affiliations：
  
  1.Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539 Munich, Germany
  2.Center for NanoScience, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539 Munich, Germany
  3.Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife-PE, Brazil
  4.School of Physics and Astronomy, Monash University, Clayton, VIC 3800, Australia
  5.The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, UK
- Author bio：
  
  Luca Sortino (luca.sortino@physik.uni-muenchen.de)
- Funds：
- DOI：10.1038/s41377-023-01249-5
  中图分类号：
- 纸质出版日期：2023-09-30，
  
  网络出版日期：2023-08-24，
  
  收稿日期：2023-04-25，
  
  修回日期：2023-07-25，
  
  录用日期：2023-07-30
- Accepted：
Scan QR Code
Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor[J]. LSA, 2023,12(9):1911-1920.

Sortino, L. et al. Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor. Light: Science & Applications, 12, 1911-1920 (2023).
Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor[J]. LSA, 2023,12(9):1911-1920. DOI： 10.1038/s41377-023-01249-5.

Sortino, L. et al. Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor. Light: Science & Applications, 12, 1911-1920 (2023). DOI： 10.1038/s41377-023-01249-5.

摘要

Abstract

Two-dimensional (2D) semiconductors possess strongly bound excitons

opening novel opportunities for engineering light–matter interaction at the nanoscale. However

their in-plane confinement leads to large non-radiative exciton–exciton annihilation (EEA) processes

setting a fundamental limit for their photonic applications. In this work

we demonstrate suppression of EEA via enhancement of light–matter interaction in hybrid 2D semiconductor–dielectric nanophotonic platforms

by coupling excitons in WS

monolayers with optical Mie resonances in dielectric nanoantennas. The hybrid system reaches an intermediate light–matter coupling regime

with photoluminescence enhancement factors up to 10

. Probing the exciton ultrafast dynamics reveal suppressed EEA for coupled excitons

even under high exciton densities

−2

. We extract EEA coefficients in the order of 10

−3

compared to 10

−2

for uncoupled monolayers

as well as a Purcell factor of 4.5. Our results highlight engineering the photonic environment as a route to achieve higher quantum efficiencies

for low-power hybrid devices

and larger exciton densities

towards strongly correlated excitonic phases in 2D semiconductors.

关键词

Keywords

references

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