High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions

Pujing Zhang; Qihang Liang; Qingli Zhou; Jinyu Chen; Menglei Li; Yuwang Deng; Wanlin Liang; Liangliang Zhang; Qinghua Zhang; Lin Gu; Chen Ge; Kui-juan Jin; Cunlin Zhang; Guozhen Yang

doi:10.1038/s41377-024-01393-6

Your Location：

Home >

Browse articles >

High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions

Article

- High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions
- High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions
- LSA 2024年13卷第3期页码：577-586
- Affiliations：
- Author bio：
  
  cqlzhou@cnu.edu.cn
  mgechen@iphy.ac.cn
- Funds：
  
  National Natural Science Foundation of China (National Science Foundation of China);Youth Innovation Promotion Association of the Chinese Academy of Sciences (Youth Innovation Promotion Association CAS)
- DOI：10.1038/s41377-024-01393-6
  中图分类号：
- 收稿日期：2023-08-03，
  
  修回日期：2024-01-17，
  
  录用日期：2024-01-21，
  
  网络出版日期：2024-03-05，
  
  纸质出版日期：2024-12
- Accepted：
Scan QR Code
High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions[J]. LSA, 2024,13(3):577-586.

Pujing Zhang, Qihang Liang, Qingli Zhou, et al. High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions[J]. Light: science & applications, 2024, 13(3): 577-586.
High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions[J]. LSA, 2024,13(3):577-586. DOI： 10.1038/s41377-024-01393-6.

Pujing Zhang, Qihang Liang, Qingli Zhou, et al. High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions[J]. Light: science & applications, 2024, 13(3): 577-586. DOI： 10.1038/s41377-024-01393-6.

摘要

Abstract

High-performance active terahertz modulators as the indispensable core components are of great importance for the next generation communication technology. However

they currently suffer from the tradeoff between modulation depth and speed. Here

we introduce two-dimensional (2D) tellurium (Te) nanofilms with the unique structure as a new class of optically controlled terahertz modulators and demonstrate their integrated heterojunctions can successfully improve the device performances to the optimal and applicable levels among the existing all-2D broadband modulators. Further photoresponse measurements confirm the significant impact of the stacking order. We first clarify the direction of the substrate-induced electric field through first-principles calculations and uncover the unusual interaction mechanism in the photoexcited carrier dynamics associated with the charge transfer and interlayer exciton recombination. This advances the fundamental and applicative research of Te nanomaterials in high-performance terahertz optoelectronics.

We have introduced Te-based all-2D heterojunctions as optically controlled terahertz modulators to significantly promote the device performances and elaborated their charge dynamics driven by substrate effect through first-principles calculations.

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=70082592&type=

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=70082592&type=small

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=70082592&type=middle

关键词

Keywords

references

B. Ferguson , X.C. Zhang , Materials for terahertz science and technology . Nat. Mater. 1 , 26 - 33 ( 2002 ). http://doi.org/10.1038/nmat708 http://doi.org/10.1038/nmat708

R. Degl’Innocenti , H. Lin , M. Navarro-Cía , Recent progress in terahertz metamaterial modulators . Nanophotonics 11 , 1485 - 1514 ( 2022 ). http://doi.org/10.1515/nanoph-2021-0803 http://doi.org/10.1515/nanoph-2021-0803

T. Harter et al. , Generalized Kramers–Kronig receiver for coherent terahertz communications . Nat. Photonics 14 , 601 - 606 ( 2020 ). http://doi.org/10.1038/s41566-020-0675-0 http://doi.org/10.1038/s41566-020-0675-0

N.V. Petrov et al. , Design of broadband terahertz vector and vortex beams: I. Review of materials and components . Light. Adv. Manuf. 3 , 54 ( 2022 ).

N.V. Petrov et al. , Design of broadband terahertz vector and vortex beams: II. Holographic assessment . Light. Adv. Manuf. 3 , 44 ( 2022 ).

G. Jnawali et al. , Observation of a transient decrease in terahertz conductivity of single-layer graphene induced by ultrafast optical excitation . Nano Lett. 13 , 524 - 530 ( 2013 ). http://doi.org/10.1021/nl303988q http://doi.org/10.1021/nl303988q

B. Sensale-Rodriguez et al. , Broadband graphene terahertz modulators enabled by intraband transitions . Nat. Commun. 3 ,( 2012 ). http://doi.org/10.1038/ncomms1787 http://doi.org/10.1038/ncomms1787

Z.P. Sun , A. Martinez , F. Wang , Optical modulators with 2D layered materials . Nat. Photonics 10 , 227 - 238 ( 2016 ). http://doi.org/10.1038/nphoton.2016.15 http://doi.org/10.1038/nphoton.2016.15

C. He et al. , Competition between free carriers and excitons mediated by defects observed in layered WSe 2 crystal with time-resolved terahertz spectroscopy . Adv. Opt. Mater. 6 , 1800290 ( 2018 ). http://doi.org/10.1002/adom.201800290 http://doi.org/10.1002/adom.201800290

S.G. Motti et al. , Phase segregation in mixed-halide perovskites affects charge-carrier dynamics while preserving mobility . Nat. Commun. 12 ,( 2021 ). http://doi.org/10.1038/s41467-021-26930-4 http://doi.org/10.1038/s41467-021-26930-4

X. Xing et al. , Role of photoinduced exciton in the transient terahertz conductivity of few-layer WS 2 laminate . J. Phys. Chem. C. 121 , 20451 - 20457 ( 2017 ). http://doi.org/10.1021/acs.jpcc.7b05345 http://doi.org/10.1021/acs.jpcc.7b05345

F. Wang et al. , Exciton polarizability in semiconductor nanocrystals . Nat. Mater. 5 , 861 - 864 ( 2006 ). http://doi.org/10.1038/nmat1739 http://doi.org/10.1038/nmat1739

W.J. Zhang et al. , Optically controlled ultrafast terahertz switching in a CdTe nanostructure thin film . Appl. Opt. 58 , 8200 - 8206 ( 2019 ). http://doi.org/10.1364/AO.58.008200 http://doi.org/10.1364/AO.58.008200

P.J. Zhang et al. , Ultrahigh modulation enhancement in all-optical Si-Based THz modulators integrated with gold nanobipyramids . Nano Lett. 22 , 1541 - 1548 ( 2022 ). http://doi.org/10.1021/acs.nanolett.1c04229 http://doi.org/10.1021/acs.nanolett.1c04229

M.C. Beard , G.M. Turner , C.A. Schmuttenmaer , Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy . Phys. Rev. B 62 , 15764 - 15777 ( 2000 ). http://doi.org/10.1103/PhysRevB.62.15764 http://doi.org/10.1103/PhysRevB.62.15764

Y. Yu et al. , Ultrafast formation and dynamics of interlayer exciton in a large-area CVD-grown WS 2 /WSe 2 heterostructure . J. Phys. Condens. Matter 30 , 495701 ( 2018 ). http://doi.org/10.1088/1361-648X/aaeb85 http://doi.org/10.1088/1361-648X/aaeb85

P. Gopalan , B. Sensale‐Rodriguez , 2D materials for terahertz modulation . Adv. Opt. Mater. 8 , 1900550 ( 2020 ). http://doi.org/10.1002/adom.201900550 http://doi.org/10.1002/adom.201900550

D.C. Zhou et al. , Epitaxial growth of main group monoelemental 2D materials . Adv. Funct. Mater. 31 , 2006997 ( 2021 ). http://doi.org/10.1002/adfm.202006997 http://doi.org/10.1002/adfm.202006997

B.N. Zheng et al. , Large‐area tellurium/germanium heterojunction grown by molecular beam epitaxy for high‐performance self‐powered photodetector . Adv. Opt. Mater. 9 , 2101052 ( 2021 ). http://doi.org/10.1002/adom.202101052 http://doi.org/10.1002/adom.202101052

C.S. Zhao et al. , Evaporated tellurium thin films for p-type field-effect transistors and circuits . Nat. Nanotechnol. 15 , 53 - 58 ( 2020 ). http://doi.org/10.1038/s41565-019-0585-9 http://doi.org/10.1038/s41565-019-0585-9

Z. Shi et al. , Two-dimensional tellurium: progress, challenges, and prospects . Nano-Micro Lett. 12 ,( 2020 ). http://doi.org/10.1007/s40820-020-00427-z http://doi.org/10.1007/s40820-020-00427-z

J.B. Shen et al. , Elemental electrical switch enabling phase segregation–free operation . Science 374 , 1390 - 1394 ( 2021 ). http://doi.org/10.1126/science.abi6332 http://doi.org/10.1126/science.abi6332

B. Chitara et al. , Probing charge transfer in 2D MoS 2 /tellurene type-II p–n heterojunctions . MRS Commun. 11 , 868 - 872 ( 2021 ). http://doi.org/10.1557/s43579-021-00117-w http://doi.org/10.1557/s43579-021-00117-w

Z.L. Zhu et al. , Multivalency-driven formation of Te-based monolayer materials: a combined first-principles and experimental study . Phys. Rev. Lett. 119 , 106101 ( 2017 ). http://doi.org/10.1103/PhysRevLett.119.106101 http://doi.org/10.1103/PhysRevLett.119.106101

Y. Liu et al. , Van der Waals heterostructures and devices . Nat. Rev. Mater. 1 , 16042 ( 2016 ). http://doi.org/10.1038/natrevmats.2016.42 http://doi.org/10.1038/natrevmats.2016.42

K. Lee et al. , Sub-picosecond carrier dynamics induced by efficient charge transfer in MoTe 2 /WTe 2 van der Waals Heterostructures . ACS Nano 13 , 9587 - 9594 ( 2019 ). http://doi.org/10.1021/acsnano.9b04701 http://doi.org/10.1021/acsnano.9b04701

Q.S. Ma et al. , Hot carrier transfer in a Graphene/PtSe 2 heterostructure tuned by a substrate-introduced effective electric field . J. Phys. Chem. C. 125 , 9296 - 9302 ( 2021 ). http://doi.org/10.1021/acs.jpcc.1c01521 http://doi.org/10.1021/acs.jpcc.1c01521

W. Choi et al. , Optoelectronics of multijunction heterostructures of transition metal dichalcogenides . Nano Lett. 20 , 1934 - 1943 ( 2020 ). http://doi.org/10.1021/acs.nanolett.9b05212 http://doi.org/10.1021/acs.nanolett.9b05212

Y. Liu , Y. Huang , X.F. Duan , Van der Waals integration before and beyond two-dimensional materials . Nature 567 , 323 - 333 ( 2019 ). http://doi.org/10.1038/s41586-019-1013-x http://doi.org/10.1038/s41586-019-1013-x

J. Yang et al. , Identifying the intermediate free-carrier dynamics across the charge separation in monolayer MoS 2 /ReSe 2 heterostructures . ACS Nano 15 , 16760 - 16768 ( 2021 ). http://doi.org/10.1021/acsnano.1c06822 http://doi.org/10.1021/acsnano.1c06822

K.N. Zhang et al. , Interlayer transition and infrared photodetection in atomically thin type-II MoTe 2 /MoS 2 van der Waals Heterostructures . ACS Nano 10 , 3852 - 3858 ( 2016 ). http://doi.org/10.1021/acsnano.6b00980 http://doi.org/10.1021/acsnano.6b00980

X.H. Cao et al. , Non‐Layered Te/In 2 S 3 tunneling heterojunctions with ultrahigh photoresponsivity and fast photoresponse . Small 18 , 2200445 ( 2022 ). http://doi.org/10.1002/smll.202200445 http://doi.org/10.1002/smll.202200445

K. Wu et al. , Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides . J. Mater. Chem. A 7 , 7430 - 7436 ( 2019 ). http://doi.org/10.1039/C9TA00280D http://doi.org/10.1039/C9TA00280D

H.M. Dong et al. , Substrate dependent terahertz response of monolayer WS 2 . Appl. Phys. Lett. 116 , 203108 ( 2020 ). http://doi.org/10.1063/5.0006617 http://doi.org/10.1063/5.0006617

J.K. Dash et al. , A method toward fabricating semiconducting 3R-NbS 2 ultrathin films . J. Phys. Chem. C. 119 , 19763 - 19771 ( 2015 ). http://doi.org/10.1021/acs.jpcc.5b04057 http://doi.org/10.1021/acs.jpcc.5b04057

Z.J. Dai et al. , High mobility 3D Dirac semimetal (Cd 3 As 2 ) for ultrafast photoactive terahertz photonics . Adv. Funct. Mater. 31 , 2011011 ( 2021 ). http://doi.org/10.1002/adfm.202011011 http://doi.org/10.1002/adfm.202011011

S.J. Xu et al. , Transient photoconductivity and free carrier dynamics in a monolayer WS 2 probed by time resolved Terahertz spectroscopy . Nanotechnology 30 , 265706 ( 2019 ). http://doi.org/10.1088/1361-6528/ab0f02 http://doi.org/10.1088/1361-6528/ab0f02

D. Li et al. , Ultrafast dynamics of defect-assisted auger process in PdSe 2 films: synergistic interaction between defect trapping and auger effect . J. Phys. Chem. Lett. 13 , 2757 - 2764 ( 2022 ). http://doi.org/10.1021/acs.jpclett.2c00315 http://doi.org/10.1021/acs.jpclett.2c00315

T.L. Cocker et al. , Microscopic origin of the Drude-Smith model . Phys. Rev. B 96 , 205439 ( 2017 ). http://doi.org/10.1103/PhysRevB.96.205439 http://doi.org/10.1103/PhysRevB.96.205439

K.P. Mithun et al. , Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy . Phys. Rev. B 105 , 144302 ( 2022 ). http://doi.org/10.1103/PhysRevB.105.144302 http://doi.org/10.1103/PhysRevB.105.144302

K.P. Mithun et al. , Ultrafast time-resolved carrier dynamics in tellurium nanowires using optical pump terahertz probe spectroscopy . Nanoscale 15 , 12670 - 12678 ( 2023 ). http://doi.org/10.1039/D3NR01588B http://doi.org/10.1039/D3NR01588B

Q. Li et al. , Active graphene–silicon hybrid diode for terahertz waves . Nat. Commun. 6 ,( 2015 ). http://doi.org/10.1038/ncomms8082 http://doi.org/10.1038/ncomms8082

R.E. Glover , M. Tinkham , Transmission of superconducting films at millimeter-microwave and far infrared frequencies . Phys. Rev. 104 , 844 - 845 ( 1956 ). http://doi.org/10.1103/PhysRev.104.844 http://doi.org/10.1103/PhysRev.104.844

P. Suo et al. , Observation of negative terahertz photoconductivity in large area type-II Dirac semimetal PtTe 2 . Phys. Rev. Lett. 126 , 227402 ( 2021 ). http://doi.org/10.1103/PhysRevLett.126.227402 http://doi.org/10.1103/PhysRevLett.126.227402

F.L. Qin et al. , Contact engineering high-performance ambipolar multilayer tellurium transistors . Nanotechnology 31 , 115204 ( 2020 ). http://doi.org/10.1088/1361-6528/ab5bec http://doi.org/10.1088/1361-6528/ab5bec

H. Sun et al. , Ultrafast polarization-dependent all-optical switching of germanium-based metaphotonic devices . Photonics Res. 8 , 263 - 270 ( 2020 ). http://doi.org/10.1364/PRJ.380446 http://doi.org/10.1364/PRJ.380446

Y.F. Yu et al. , Engineering substrate interactions for high luminescence efficiency of transition-metal dichalcogenide monolayers . Adv. Funct. Mater. 26 , 4733 - 4739 ( 2016 ). http://doi.org/10.1002/adfm.201600418 http://doi.org/10.1002/adfm.201600418

M.J. Cheng , Z.Z. Zhu , G.Y. Guo , Strong bulk photovoltaic effect and second-harmonic generation in two-dimensional selenium and tellurium . Phys. Rev. B 103 , 245415 ( 2021 ). http://doi.org/10.1103/PhysRevB.103.245415 http://doi.org/10.1103/PhysRevB.103.245415

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Light | 高性能碲基异质结太赫兹调制器

暂无数据