Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors

Zhiwei Xie; Ke Jiang; Shanli Zhang; Jianwei Ben; Mingrui Liu; Shunpeng Lv; Yang Chen; Yuping Jia; Xiaojuan Sun; Dabing Li

doi:10.1038/s41377-024-01422-4

Your Location：

Home >

Browse articles >

Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors

Original Articles

- Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors
- Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors
- LSA 2024年13卷第4期页码：706-716
- Affiliations：
  
  1.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China
  2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, 100049 Beijing, China
- Author bio：
  
  Ke Jiang (jiangke@ciomp.ac.cn)
  Xiaojuan Sun (sunxj@ciomp.ac.cn)
  Dabing Li (lidb@ciomp.ac.cn)
- Funds：
- DOI：10.1038/s41377-024-01422-4
  中图分类号：
- 收稿日期：2024-01-02，
  
  修回日期：2024-03-11，
  
  录用日期：2024-03-11，
  
  网络出版日期：2024-03-29，
  
  纸质出版日期：2024-04-30
- Accepted：
Scan QR Code
Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors[J]. LSA, 2024,13(4):706-716.

Xie, Z. W. et al. Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors. Light: Science & Applications, 13, 706-716 (2024).
Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors[J]. LSA, 2024,13(4):706-716. DOI： 10.1038/s41377-024-01422-4.

Xie, Z. W. et al. Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors. Light: Science & Applications, 13, 706-716 (2024). DOI： 10.1038/s41377-024-01422-4.

摘要

Abstract

With the fast development of artificial intelligence (AI)

Internet of things (IOT)

etc

there is an urgent need for the technology that can efficiently recognize

store and process a staggering amount of information. The AlScN material has unique advantages including immense remnant polarization

superior temperature stability and good lattice-match to other Ⅲ-nitrides

making it easy to integrate with the existing advanced Ⅲ-nitrides material and device technologies. However

due to the large band-gap

strong coercive field

and low photo-generated carrier generation and separation efficiency

it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface/interface to induce polarization inversion

limiting its application in in-memory sensing and computing. In this work

an electro-optic duplex memristor on a GaN/AlScN hetero-structure based Schottky diode has been realized. This two-terminal memristor shows good electrical and opto-electrical nonvolatility and reconfigurability. For both electrical and opto-electrical modes

the current on/off ratio can reach the magnitude of 10

and the resistance states can be effectively reset

written and long-termly stored. Based on this device

the "IMP" truth table and the logic "False" can be successfully reproduced

indicating the huge potential of the device in the field of in-memory sensing and computing.

关键词

Keywords

references

Kyuma, K. et al. Artificial retinas—fast, versatile image processors. Nature 372 , 197–198 (1994)..

Funatsu, E. et al. An artificial retina chip with current-mode focal plane image processing functions. IEEE Trans. Electron Devices 44 , 1777–1782 (1997)..

Zhou, F. C. & Chai, Y. Near-sensor and in-sensor computing. Nat. Electron. 3 , 664–671 (2020)..

Jang, H. et al. In-sensor optoelectronic computing using electrostatically doped silicon. Nat. Electron. 5 , 519–525 (2022)..

Bai, B. et al. To image, or not to image: class-specific diffractive cameras with all-optical erasure of undesired objects. eLight 2 , 14 (2022)..

Luo, Y. et al. Computational imaging without a computer: seeing through random diffusers at the speed of light. eLight 2 , 4 (2022)..

Mennel, L. et al. Ultrafast machine vision with 2D material neural network image sensors. Nature 579 , 62 (2020)..

Cui, B. Y. et al. Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision. Nat. Commun. 13 , 1707 (2022)..

Zhou, F. C. et al. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat. Nanotechnol. 14 , 776 (2019)..

Chen, J. et al. Polarized tunneling transistor for ultrafast memory. ACS Nano 17 , 12374–12382 (2023)..

Li, T. X. et al. Reconfigurable, non-volatile neuromorphic photovoltaics. Nat. Nanotechnol. 18 , 1303–1310 (2023)..

Long, X. et al. Ferroelectric electroresistance after a breakdown in epitaxial Hf 0.5 Zr 0.5 O 2 tunnel junctions. ACS Appl. Electron. Mater. 5 , 740–747 (2023)..

Nath, S. K. et al. Harnessing metal/oxide interlayer to engineer the memristive response and oscillation dynamics of two-terminal memristors. Adv. Funct. Mater. 33 , 2306428 (2023)..

Hu, L. X. et al. All-optically controlled memristor for optoelectronic neuromorphic computing. Adv. Funct. Mater. 31 , 2005582 (2021)..

Zhu, L. Q. et al. Artificial synapse network on inorganic proton conductor for neuromorphic systems. Nat. Commun. 5 , 3158 (2014)..

Yang, J. Q. et al. A Perovskite memristor with large dynamic space for analog-encoded image recognition. ACS Nano 16 , 21324–21333 (2022)..

Wang, L. et al. Exploring ferroelectric switching in α-In 2 Se 3 for neuromorphic computing. Adv. Funct. Mater. 30 , 2004609 (2020)..

Xue, F. et al. Optoelectronic ferro electric domain-wall memories made from a single van der Waals ferroelectric. Adv. Funct. Mater. 30 , 2004206 (2020)..

Li, X. et al. Multi-functional platform for in-memory computing and sensing based on 2D ferroelectric semiconductor α-In 2 Se 3 . Adv. Funct. Mater. 34 , 2306486 (2024)..

Yang, J. Y. et al. Reconfigurable radio-frequency high-electron mobility transistors via ferroelectric-based gallium nitride heterostructure. Adv. Electron. Mater. 8 , 2101406 (2022)..

Mukherjee, S. et al. Graphene-In 2 Se 3 van der Waals heterojunction neuristor for optical in-memory bimodal operation. ACS Nano 17 , 22287–22298 (2023)..

Tsai, S. L. et al. Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering. Appl. Phys. Lett. 118 , 082902 (2021)..

Wang, P. et al. Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy. Appl. Phys. Lett. 118 , 223504 (2021)..

Schönweger, G. et al. In-grain ferroelectric switching in Sub-5 nm thin Al 0.74 Sc 0.26 N films at 1 V. Adv. Sci. 10 , 2302296 (2023)..

Guido, R. et al. Role of defects in the breakdown phenomenon of Al 1- x Sc x N: from ferroelectric to filamentary resistive switching. Nano Lett. 23 , 7213–7220 (2023)..

Fu, H. L., Goodrich, J. C. & Tansu, N. Band alignment of ScAlN/GaN heterojunction. Appl. Phys. Lett. 117 , 231105 (2020)..

Fichtner, S. et al. AlScN: a Ⅲ-Ⅴ semiconductor based ferroelectric. J. Appl. Phys. 125 , 114103 (2019)..

Wang, D. et al. Ultrathin nitride ferroic memory with large ON/OFF ratios for analog in-memory computing. Adv. Mater. 35 , 2210628 (2023)..

Kim, K. H. et al. Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors. Nat. Nanotechnol. 18 , 1044 (2023)..

Ma, T. P. & Han, J. P. Why is nonvolatile ferroelectric memory field-effect transistor still elusive? IEEE Electron Device Lett. 23 , 3 86–388 (2002)..

Wang, D. et al. An epitaxial ferroelectric ScAlN/GaN heterostructure memory. Adv. Electron. Mater. 8 , 2200005 (2022)..

Mondal, S. et al. Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN. APL Mater. 10 , 121101 (2022)..

Xu, K. et al. Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors. Nanoscale 12 , 23488–23496 (2020)..

Jiang, K. et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light Sci. Appl. 10 , 69 (2021)..

Guo, L. et al. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode. Photonics Res. 9 , 1907–1915 (2021)..

Jiang, K. et al. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. Photonics Res. 8 , 1243–1252 (2020)..

Zhang, L. D. et al. Demonstration of weak polarization electric field Ⅲ-N LEDs based on polar plane. Laser Photonics Rev. 17 , 2300400 (2023)..

Chen, M. H. et al. GaN ultraviolet laser based on bound states in the continuum (BIC). Adv. Opt. Mater. 11 , 2201906 (2023)..

Liu, X. W. et al. Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory. Nano Lett. 21 , 3753–3761 (2021)..

Urban, D. F., Ambacher, O. & Elsässer, C. First-principles calculation of electroacoustic properties of wurtzite (Al, Sc)N. Phys. Rev. B 103 , 115204 (2021)..

Ambacher, O. et al. Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties. J. Appl. Phys. 130 , 045102 (2021)..

Yang, J. Y. et al. Reconfigurable physical reservoir in GaN/α-In 2 Se 3 HEMTs enabled by out-of-plane localpolarization of ferroelectric 2D layer. ACS Nano 17 , 7695–7704 (2023)..

Chen, J. et al. Hi ghly sensitive and tunable self-powered UV photodetectors driven jointly by p-n junction and ferroelectric polarization. ACS Appl. Mater. Interfaces 12 , 53957–53965 (2020)..

Park, I. H. et al. Self-powered photodetector using two-dimensional ferroelectric Dion-Jacobson hybrid perovskites. J. Am. Chem. Soc. 142 , 18592–18598 (2020)..

Cao, F. R. et al. Polarized ferroelectric field-enhanced self-powered perovskite photodetector. ACS Photonics 5 , 3731–3738 (2018)..

Chen, J. et al. High-performance self-powered ultraviolet photodetector based on coupled ferroelectric depolarization field and heterojunction built-in potential. Adv. Electron. Mater. 7 , 2100717 (2021)..

Borghetti, J. et al. Memristive' switches enable 'stateful' logic operations via material implication. Nature 464 , 873–876 (2010)..

Fu, X. et al. Graphene/MoS 2-x O x /graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing. Light Sci. Appl. 12 , 39 (2023)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Light | 基于三族氮化物半导体的非易失感存算一体集成器件

暂无数据