A memristive-photoconductive transduction methodology for accurately nondestructive memory readout

Zhe Zhou; Yueyue Wu; Keyuan Pan; Duoyi Zhu; Zifan Li; Shiqi Yan; Qian Xin; Qiye Wang; Xinkai Qian; Fei Xiu; Wei Huang; Juqing Liu

doi:10.1038/s41377-024-01519-w

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A memristive-photoconductive transduction methodology for accurately nondestructive memory readout

Original Articles

- A memristive-photoconductive transduction methodology for accurately nondestructive memory readout
- A memristive-photoconductive transduction methodology for accurately nondestructive memory readout
- LSA 2024年13卷第9期页码：1801-1808
- Affiliations：
  
  1.Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
  2.Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
  3.Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
- Author bio：
  
  Juqing Liu (iamjqliu@njtech.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01519-w
  中图分类号：
- 收稿日期：2024-02-18，
  
  修回日期：2024-06-11，
  
  录用日期：2024-07-01，
  
  网络出版日期：2024-07-23，
  
  纸质出版日期：2024-09-30
- Accepted：
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A memristive-photoconductive transduction methodology for accurately nondestructive memory readout[J]. LSA, 2024,13(9):1801-1808.

Zhou, Z. et al. A memristive-photoconductive transduction methodology for accurately nondestructive memory readout. Light: Science & Applications, 13, 1801-1808 (2024).
A memristive-photoconductive transduction methodology for accurately nondestructive memory readout[J]. LSA, 2024,13(9):1801-1808. DOI： 10.1038/s41377-024-01519-w.

Zhou, Z. et al. A memristive-photoconductive transduction methodology for accurately nondestructive memory readout. Light: Science & Applications, 13, 1801-1808 (2024). DOI： 10.1038/s41377-024-01519-w.

摘要

Abstract

Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing

accurate retrieval of the stored information is a prerequisite during read operation. However

conventional electrical readout normally suffer from complicated process

inaccurate and destructive reading due to crosstalk effect from sneak path current. Here we report a memristive-photoconductive transduction (MPT) methodology for precise and nondestructive readout in a memristive crossbar array. The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation

which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli. This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell

and a prototype 4 * 4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.

关键词

Keywords

references

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