1.Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072 Xi'an, China
2.Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra ACT 2600, Australia
3.Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129 Xi'an, China
4.Australian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney NSW 2006, Australia
5.School of Engineering, College of Engineering, The Australian National University, Canberra ACT 2600, Australia
6.ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra ACT 2600, Australia
Xuetao Gan (xuetaogan@nwpu.edu.cn)
Lan Fu (lan.fu@anu.edu.au)
收稿日期:2024-02-27,
修回日期:2024-07-26,
录用日期:2024-08-08,
网络出版日期:2024-09-04,
纸质出版日期:2024-10-31
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Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays[J]. LSA, 2024,13(10):2405-2413.
Zhang, X. T. et al. Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays. Light: Science & Applications, 13, 2405-2413 (2024).
Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays[J]. LSA, 2024,13(10):2405-2413. DOI: 10.1038/s41377-024-01570-7.
Zhang, X. T. et al. Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays. Light: Science & Applications, 13, 2405-2413 (2024). DOI: 10.1038/s41377-024-01570-7.
Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies
which require compact
multiwavelength laser sources at the telecom band. Here
we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core–shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode
a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry–Pérot cavity between the top nanowire facet and bottom nanowire/SiO
2
mask interface
stimulated emissions of the EH
11a/b
mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm
−2
per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells
room temperature
single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range
spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy
highly ordered
uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate
paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.
Ning, C. Z., Dou, L. T. & Yang, P. D. Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions. Nat. Rev. Mater. 2 , 17070 (2017)..
Church, S. A. et al. Optical characterisation of nanowire lasers. Prog. Quantum Electron. 85 , 100408 (2022)..
Lu, F. L. et al. Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths. Optica 4 , 717–723 (2017)..
Yi, R. X. et al. Self-frequency-conversion nanowire lasers. Light Sci. Appl. 11 , 120 (2022)..
Zhang, C. H. et al. Dual-color single-mode lasing in axially coupled organic nanowire resonators. Sci. Adv. 3 , e1700225 (2017)..
Huang, M. H. et al. Room-temperature ultraviolet nanowire nanolasers. Science 292 , 1897–1899 (2001)..
Bao, Q. Y. et al. On-chip single-mode CdS nanowire laser. Light Sci. Appl. 9 , 42 (2020)..
Li, C. Y. et al. Low-threshold multiwavelength plasmonic nanolasing in an "H"-shape cavity. Laser Photonics Rev. 17 , 2300187 (2023)..
Skalsky, S. et al. Heterostructure and Q -factor engineering for low-threshold and persistent nanowire lasing. Light Sci. Appl. 9 , 43 (2020)..
Sun, Q. et al. Axiotaxy driven growth of belt-shaped InAs nanowires in molecular beam epitaxy. Nano Res. 14 , 2330–2336 (2021)..
Sun, Q. et al. High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE. Nanoscale 12 , 271–276 (2020)..
Zhang, X. T. et al. Ultralow threshold, single-mode InGaAs/GaAs multiquantum disk nanowire lasers. ACS Nano 15 , 9126–9133 (2021)..
Jagsch, S. T. et al. A quantum optical study of thresholdless lasing features in high- β nitride nanobeam cavities. Nat. Commun. 9 , 564 (2018)..
Eaton, S. W. et al. Semiconductor nanowire lasers. Nat. Rev. Mater. 1 , 16028 (2016)..
Saxena, D. et al. Optically pumped room-temperature GaAs nanowire lasers. Nat. Photonics 7 , 963–968 (2013)..
Zhuang, X. J. et al. Multicolor semiconductor lasers. Adv. Opt. Mater. 7 , 1900071 (2019)..
Ma, Y. G. et al. Semiconductor nanowire lasers. Adv. Opt. Photonics 5 , 216–273 (2013)..
Zhang, G. Q. et al. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature. Sci. Adv. 5 , eaat8896 (2019)..
Han, Y. et al. Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands. Optica 5 , 918–923 (2018)..
Yokoo, A. et al. Subwavelength nanowire lasers on a silicon photonic crystal operating at telecom wavelengths. ACS Photonics 4 , 355–362 (2017)..
Kim, H. et al. Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator. Nano Lett. 17 , 5244–5250 (2017)..
Zhou, Z. C. et al. Prospects and applications of on-chip lasers. eLight 3 , 1 (2023)..
Liang, D. & Bowers, J. E. Recent progress in heterogeneous Ⅲ-Ⅴ-on-silicon photonic integration. Light. Adv. Manuf. 2 , 59–83 (2021)..
Yi, R. X. et al. Integrating a nanowire laser in an on-chip photonic waveguide. Nano Lett. 22 , 9920–9927 (2022)..
Zhang, X. T. et al. Vertical emitting nanowire vector beam lasers. ACS Nano 17 , 10918–10924 (2023)..
Saxena, D. et al. Design and room-temperature operation of GaAs/AlGaAs multiple quantum well nanowire lasers. Nano Lett. 16 , 5080–5086 (2016)..
Fonseka, H. A. et al. InP-In x Ga 1- x As core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range. Nanoscale 9 , 13554–13562 (2017)..
Yuan, X. M. et al. Selective area epitaxy of Ⅲ–Ⅴ nanostructure arrays and networks: growth, applications, and future directions. Appl. Phys. Rev. 8 , 021302 (2021)..
Gao, Q. et al. Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing. Nano Lett. 14 , 5206–5211 (2014)..
Gao, Q. et al. Simultaneous selective-area and vapor-liquid-solid growth of InP nanowire arrays. Nano Lett. 16 , 4361–4367 (2016)..
Ding, Y. et al. Observation of microcavity modes and waveguides in InP nanowires fabricated by selective-area metalorganic vapor-phase epitaxy. Nano Lett. 7 ,3598–3602 (2007)..
Azimi, Z. et al. Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications. Nanoscale Horiz. 6 , 559–567 (2021)..
Mayer, B. et al. Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature. Nat. Commun. 4 , 2931 (2013)..
Wang, Z. C. et al. Room-temperature InP distributed feedback laser array directly grown on silicon. Nat. Photonics 9 , 837–842 (2015)..
Joyce, H. J. et al. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy. Nano Lett. 12 , 5325–5330 (2012)..
Sun, J. M. et al. Nonpolar-oriented wurtzite InP nanowires with electron mobility approaching the theoretical limit. ACS Nano 12 , 10410–10418 (2018)..
Yang, I. et al. Radial growth evolution of InGaAs/InP multi-quantum-well nanowires grown by selectiv e-area metal organic vapor-phase epitaxy. ACS Nano 12 , 10374–10382 (2018)..
Akamatsu, T., Tomioka, K. & Motohisa, J. Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs. Nanotechnology 31 , 394003 (2020)..
Zhang, F. L. et al. A new strategy for selective area growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays for optoelectronic device applications. Adv. Funct. Mater. 32 , 2103057 (2022)..
Han, Y. et al. Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator. Opt. Lett. 44 , 767–770 (2019)..
Schuster, F. et al. Site-controlled growth of monolithic InGaAs/InP quantum well nanopillar lasers on silicon. Nano Lett. 17 , 2697–2702 (2017)..
Wang, N. Y. et al. Shape engineering of InP nanostructures by selective area epitaxy. ACS Nano 13 , 7261–7269 (2019)..
Ishizaka, F. et al. Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures. Jpn. J. Appl. Phys. 56 , 010311 (2017)..
Fahed, M. et al. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy. Nanotechnology 26 , 295301 (2015)..
Zhang, X. et al. Growth mechanism of InP nanostructure arrays by self-catalyzed selective area epitaxy: a deep understanding of thermodynamic and kinetic theories. Cryst. Growth Des. 21 , 988–994 (2021)..
Joyce, H. J. et al. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy. Nanotechnology 24 , 214006 (2013)..
Yang, I. et al. Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes. Nano Energy 71 , 104576 (2020)..
Yang, I. et al. Multiwavelength single nanowire InGaAs/InP quantum well light-emitting diodes. Nano Lett. 19 , 3821–3829 (2019)..
Ren, D. D. et al. Single-mode near-infrared lasing in a GaAsSb-based nanowire superlattice at room temperature. Nano Lett. 18 , 2304–2310 (2018)..
Zhou, C. et al. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime. Nanoscale 11 , 6859–6865 (2019)..
Chen, S. L. et al. Near-infrared lasing at 1 μm from a dilute-nitride-based multishell nanowire. Nano Lett. 19 , 885–890 (2019)..
Saxena, D. et al. Mode profiling of semiconductor nanowire lasers. Nano Lett. 15 , 5342–5348 (2015)..
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