Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator

Hang Chen

doi:10.1038/s41377-024-01625-9

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Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator

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- Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator
- Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator
- LSA 2024年13卷第11期页码：2441-2442
- Affiliations：
  
  Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Author bio：
  
  Hang Chen (chen.hang@alu.hit.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01625-9
  中图分类号：
- 网络出版日期：2024-09-26，
  
  纸质出版日期：2024-11-30
- Accepted：
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Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator[J]. LSA, 2024,13(11):2441-2442.

Chen, H. Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator. Light: Science & Applications, 13, 2441-2442 (2024).
Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator[J]. LSA, 2024,13(11):2441-2442. DOI： 10.1038/s41377-024-01625-9.

Chen, H. Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator. Light: Science & Applications, 13, 2441-2442 (2024). DOI： 10.1038/s41377-024-01625-9.

摘要

Abstract

A novel non-volatile photonic-electronic memory

3D integrating an Al-doped HfO

ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes

enables electrically/optically programmable

non-destructively readable

and multi-level storage functions.

关键词

Keywords

references

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