Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Haifeng Wu; Xiao Lin; Qin Shuai; Youliang Zhu; Yi Fu; Xiaoqin Liao; Yazhou Wang; Yizhe Wang; Chaowei Cheng; Yong Liu; Lei Sun; Xinyi Luo; Xiaoli Zhu; Liancheng Wang; Ziwei Li; Xiao Wang; Dong Li; Anlian Pan

doi:10.1038/s41377-024-01639-3

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Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Original Articles

- Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers
- Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers
- LSA 2024年13卷第12期页码：3041-3051
- Affiliations：
  
  1.Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, 410082 Changsha, China
  2.Innovision Technology (Suzhou) Co. Ltd, 215000 Suzhou, China
  3.Lattice Power (Jiangxi) Corp., 330029 Nanchang, China
  4.College of Mechanical and Electrical Engineering, Central South University, 410083 Changsha, China
  5.Beijing Digital Optical Device IC Design Co. Ltd, 100015 Beijing, China
  6.School of Physics and Electronics, Hunan Normal University, 410081 Changsha, China
- Author bio：
  
  Dong Li (liidong@hnu.edu.cn)
  Anlian Pan (anlian.pan@hnu.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01639-3
  中图分类号：
- 收稿日期：2024-05-06，
  
  修回日期：2024-09-08，
  
  录用日期：2024-09-14，
  
  网络出版日期：2024-10-09，
  
  纸质出版日期：2024-12-31
- Accepted：
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Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers[J]. LSA, 2024,13(12):3041-3051.

Wu, H. F. et al. Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers. Light: Science & Applications, 13, 3041-3051 (2024).
Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers[J]. LSA, 2024,13(12):3041-3051. DOI： 10.1038/s41377-024-01639-3.

Wu, H. F. et al. Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers. Light: Science & Applications, 13, 3041-3051 (2024). DOI： 10.1038/s41377-024-01639-3.

摘要

Abstract

Owing to high pixel density and brightness

gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However

Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency

resulting in reduced luminous efficiency and severe brightness non-uniformity. Here

we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate

which possesses a low dislocation density of 5.25 × 10

−2

small wafer bowing of 16.7 μm

and high wavelength uniformity (standard deviation STDEV

1 nm)

scalable to 6-inch sizes. Based on the high-quality GaN epilayers

green Micro-LEDs with 5 μm pixel sizes are designed with vertical non-alignment bonding technology. An atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top

which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si epi-wafer. Ultra-high brightness exceeding 10

cd/m

(nits) is thus achieved in the green Micro-LEDs

marking the highest reported results. Furthermore

integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080 × 780

realizing high-definition playback of movies and images. This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

关键词

Keywords

references

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