1.Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
2.Integrated Optical Systems, MESA+ Institute for Nanotechnology, University of Twente, 7500AE Enschede, The Netherlands
3.LIGENTEC SA, EPFL Innovation Par L, Chemin de la Dent-d’Oche 1B, CH-1024 Ecublens, Switzerland
4.Department of Physics, Universität Hamburg, Jungiusstr. 9, 20355 Hamburg, Germany
Neetesh Singh (neetesh.singh@desy.de)
纸质出版日期:2025-01-31,
网络出版日期:2025-01-02,
收稿日期:2024-06-20,
修回日期:2024-10-27,
录用日期:2024-10-30
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Sub-2W tunable laser based on silicon photonics power amplifier[J]. LSA, 2025,14(1):177-185.
Singh, N. et al. Sub-2W tunable laser based on silicon photonics power amplifier. Light: Science & Applications, 14, 177-185 (2025).
Sub-2W tunable laser based on silicon photonics power amplifier[J]. LSA, 2025,14(1):177-185. DOI: 10.1038/s41377-024-01681-1.
Singh, N. et al. Sub-2W tunable laser based on silicon photonics power amplifier. Light: Science & Applications, 14, 177-185 (2025). DOI: 10.1038/s41377-024-01681-1.
High-power tunable lasers are intensely pursued due to their vast application potential such as in telecom
ranging
and molecular sensing. Integrated photonics
however
is usually considered not suitable for high-power applications mainly due to its small size which limits the energy storage capacity and
therefore
the output power. In the late 90s
to improve the beam quality and increase the stored energy
large-mode-area (LMA) fibers were introduced in which the optical mode area is substantially large. Such LMA fibers have transformed the high-power capability of fiber systems ever since. Introducing such an LMA technology at the chip-scale can play an equally disruptive role with high power signal generation from an integrated photonics system. To this end
in this work we demonstrate such a technology
and show a very high-power tunable laser with the help of a silicon photonics based LMA power amplifier. We show output power reaching 1.8 W over a tunability range of 60 nm
spanning from 1.83 µm to 1.89 µm
limited only by the seed laser. Such an integrated LMA device can be used to substantially increase the power of the existing integrated tunable lasers currently limited to a few tens of milliwatts. The power levels demonstrated here reach and surpass that of many benchtop systems which truly makes the silicon photonics based integrated LMA device poised towards mass deployment for high power applications without relying on benchtop systems.
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