A bright future for micro-LED displays

Vineeth K. Bandari; Oliver G. Schmidt

doi:10.1038/s41377-024-01683-z

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A bright future for micro-LED displays

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- A bright future for micro-LED displays
- A bright future for micro-LED displays
- LSA 2024年13卷第12期页码：2877-2879
- Affiliations：
  
  1.Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, Germany
  2.Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, Germany
  3.International Institute for Intelligent Nanorobots and Nanosystems (IIINN), Fudan University, Shanghai, China
- Author bio：
  
  Vineeth K. Bandari (vineeth-kumar.bandari@etit.tu-chemnitz.de)
  Oliver G. Schmidt (oliver.schmidt@main.tu-chemnitz.de)
- Funds：
- DOI：10.1038/s41377-024-01683-z
  中图分类号：
- 网络出版日期：2024-12-06，
  
  纸质出版日期：2024-12-31
- Accepted：
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A bright future for micro-LED displays[J]. LSA, 2024,13(12):2877-2879.

Bandari, V. K. & Schmidt, O. G. A bright future for micro-LED displays. Light: Science & Applications, 13, 2877-2879 (2024).
A bright future for micro-LED displays[J]. LSA, 2024,13(12):2877-2879. DOI： 10.1038/s41377-024-01683-z.

Bandari, V. K. & Schmidt, O. G. A bright future for micro-LED displays. Light: Science & Applications, 13, 2877-2879 (2024). DOI： 10.1038/s41377-024-01683-z.

摘要

Abstract

The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10

nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth

sidewall passivation

efficient photon extraction

and elegant bonding technologies

and promises significant advantages for augmented and virtual reality devices

wearables

and next-generation consumer electronics.

关键词

Keywords

references

Zhang, X. et al. High-resolution monolithic micro-LED full-color micro-display. SID Symp. Dig. Tech. Pap. 51 , 339–342 (2020)..

Qi, L. H. et al. 848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production. Opt. Express 29 , 10580–10591 (2021)..

Yu, J. C. et al. Gallium nitride blue/green micro-LEDs for high brightness and transparency display. IEEE Electron Device Lett. 44 , 281–284 (2023)..

Wu, H. F. et al. Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers. Light Sci. Appl. 13 , 284 (2024)..

Yan, X. et al. Enhanced light extraction efficiency of GaN-based green micro-LED modulating by a thickness-tunable SiO 2 passivation structure. Opt. Express 31 , 39717–39726 (2023)..

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