Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection

Yi Wu; Wenjie Deng; Yongzhe Zhang

doi:10.1038/s41377-025-01828-8

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Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection

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- Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection
- Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection
- LSA 2025年14卷第6期页码：1471-1472
- Affiliations：
  
  1.Key Laboratory of Optoelectronics Technology of Education, School of Information Science and Technology, Beijing University of Technology, 100124 Beijing, China
  2.College of Materials Science and Engineering, Beijing University of Technology, 100124 Beijing, China
- Author bio：
  
  Wenjie Deng (wjdeng@bjut.edu.cn)
  Yongzhe Zhang (yzzhang@bjut.edu.cn)
- Funds：
- DOI：10.1038/s41377-025-01828-8
  中图分类号：
- 网络出版日期：2025-04-02，
  
  纸质出版日期：2025-06-30
- Accepted：
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Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection[J]. LSA, 2025,14(6):1471-1472.

Wu, Y., Deng, W. J. & Zhang, Y. Z. Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection. Light: Science & Applications, 14, 1471-1472 (2025).
Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection[J]. LSA, 2025,14(6):1471-1472. DOI： 10.1038/s41377-025-01828-8.

Wu, Y., Deng, W. J. & Zhang, Y. Z. Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection. Light: Science & Applications, 14, 1471-1472 (2025). DOI： 10.1038/s41377-025-01828-8.

摘要

Abstract

Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase t

ransitions can be realized near the transition temperature. Photodetectors based on Ta

NiSe

a room-temperature excitonic insulator phase transition material

exhibit exceptional performance from visible to terahertz frequencies. Specifically

in the terahertz range

the electronic bandwidth is 360 kHz

and the specific detectivity (D*) reaches 5.3 × 10

cm·Hz

1/2

·W

−1

. The van der Waals heterostructure of Ta

NiSe

/WS

further enhances performance.

关键词

Keywords

references

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