High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication

Shijie Zhan; Benxuan Li; Tong Chen; Yudi Tu; Hong Ji; Diyar Mousa Othman; Mingfei Xiao; Renjun Liu; Zuhong Zhang; Ying Tang; Wenlong Ming; Meng Li; Hang Zhou; Bo Hou

doi:10.1038/s41377-025-01853-7

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High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication

Original Articles

- High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication
- High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication
- LSA 2025年14卷第8期页码：2129-2138
- Affiliations：
  
  1.School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, UK
  2.International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
  3.School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
  4.Department of Instruments Science and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  5.Key Lab for Special Functional Materials of Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Nanoscience and Materials Engineering, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
  6.School of Engineering, Cardiff University, The Parade, Cardiff CF24 3AA, UK
- Author bio：
  
  Meng Li (mengli@henu.edu.cn)
  Hang Zhou (zhouh81@pkusz.edu.cn)
  Bo Hou (houb6@cardiff.ac.uk)
- Funds：
- DOI：10.1038/s41377-025-01853-7
  中图分类号：
- 收稿日期：2024-07-17，
  
  修回日期：2025-03-26，
  
  录用日期：2025-03-31，
  
  网络出版日期：2025-05-19，
  
  纸质出版日期：2025-08-31
- Accepted：
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High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication[J]. LSA, 2025,14(8):2129-2138.

Zhan, S. J. et al. High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication. Light: Science & Applications, 14, 2129-2138 (2025).
High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication[J]. LSA, 2025,14(8):2129-2138. DOI： 10.1038/s41377-025-01853-7.

Zhan, S. J. et al. High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication. Light: Science & Applications, 14, 2129-2138 (2025). DOI： 10.1038/s41377-025-01853-7.

摘要

Abstract

The surging demand and adoption of infrared photodetectors (IRPDs) in sectors of imaging

mobile

healthcare

automobiles

and optical communication are hindered by the prohibitive costs of traditional IRPD materials such as InGaAs and HgCdTe. Quantum dots (QDs)

especially lead chalcogenide (PbS) QDs

represent the next-generation low-bandgap semiconductors for near-infrared (NIR) detection due to their high optical absorption coefficient

tunable bandgap

low fabrication costs

and device compatibility. Innovative techniques such as ligand exchange processes have been proposed to boost the performance of PbS QDs photodetectors

mostly using short ligands like 1

2-ethanedithiol (EDT) and tetrabutylammonium iodide (TBAI). Our study explores the use of long-chain dithiol ligands to enhance the responsivity of PbS QDs/InGaZnO phototransistors. Long-chain dithiol ligands are found to suppress horizontal electron transport/leakage and electron trapping

which is beneficial for responsivity. Utilizing a novel ligand-exchange technique with 1

10-decanedithiol (DDT)

we develop high-perfor

mance hybrid phototransistors with detectivity exceeding 10

Jones. Based on these phototransistors

we demonstrate image communication through a NIR optical communication system. The long-ligand PbS QDs/InGaZnO hybrid phototransistor demonstrates significant potential for NIR low-dose imaging and optical communication

particularly in scenarios requiring the detection of weak light signals at low frequencies.

关键词

Keywords

references

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