1.Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
2.Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
3.Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
4.Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
5.Institute of Nano Science and Technology & Clean-Energy Research Institute, Hanyang University, Seoul 04763, Republic of Korea
6.Graduate School of Semiconductor Materials and Device Engineering & Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
7.Institute of Emergent Materials, Sogang University, Seoul 04107, Republic of Korea
BongSoo Kim (bongsoo@unist.ac.kr)
Moon Sung Kang (kangms@sogang.ac.kr)
收稿日期:2024-11-12,
修回日期:2025-05-21,
录用日期:2025-05-21,
网络出版日期:2025-07-22,
纸质出版日期:2025-09-30
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Micrometer-scale indirect photopatterning of RGB OLED emissive layers in single phase network structure[J]. LSA, 2025,14(9):2642-2655.
Lee, S. et al. Micrometer-scale indirect photopatterning of RGB OLED emissive layers in single phase network structure. Light: Science & Applications, 14, 2642-2655 (2025).
Micrometer-scale indirect photopatterning of RGB OLED emissive layers in single phase network structure[J]. LSA, 2025,14(9):2642-2655. DOI: 10.1038/s41377-025-01907-w.
Lee, S. et al. Micrometer-scale indirect photopatterning of RGB OLED emissive layers in single phase network structure. Light: Science & Applications, 14, 2642-2655 (2025). DOI: 10.1038/s41377-025-01907-w.
Organic light-emitting diodes (OLEDs) used in virtual and augmented reality displays require micrometer-scale red-green-blue (RGB) pixel patterns in the emissive layer (EML). However
conventional patterning methods based on evaporation and shadow masks can only produce patterns larger than tens of micrometers owing to the geometric constraint of the mask. Herein
an indirect method for photopatterning solution-processed OLED EMLs is proposed
which can be used to form micrometer-scale RGB pixel patterns without involving direct exposure to UV radiation or harsh etching processes on EMLs. EMLs can be patterned by ⅰ) forming a sacrificial photoresist (PR) pattern
ⅱ) spin-coating an EML film
ⅲ) converting the EML film into a single-phase network (SPN) structure by crosslinking vinylbenzyl-group-appended hosts and dopants at a low temperature
and ⅳ) stripping the pre-formed PR pattern. Furthermore
repeating the process thrice results in the formation of RGB EML patterns. During the repeated process
the sacrificial PR pattern serves as a protective layer for the underlying EML pattern
effectively preventing the EML pattern from being exposed to solutions in subsequent processes. Using a conventional photolithography setup
we produced sets of RGB EML patterns with densities exceeding 3000 patterns/in.
which indicated the potential of the method for industrial use.
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