Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy

Fumikazu Murakami; Shinji Ueyama; Kenji Suzuki; Ingi Kim; Inkeun Baek; Sangwoo Bae; Dougyong Sung; Myungjun Lee; Sungyoon Ryu; Yusin Yang; Masayoshi Tonouchi

doi:10.1038/s41377-025-01911-0

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Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy

Original Articles

- Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy
- Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy
- LSA 2025年14卷第8期页码：2279-2288
- Affiliations：
  
  1.Department of Electrical and Computer Engineering, Rice University, 6100 Main St., Houston, TX 77005, USA
  2.Advanced Equipment Lab, Samsung Device Solutions R&D Japan, 2-7 Sugasawa-cho, Yokohama Tsurumi-ku, Kanagawa 230-0027, Japan
  3.Core Technology R&D Team, Global Manufacturing & Infra Technology, Samsung Electronics Co. Ltd., 1-1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea
  4.Advanced Process Development Team 4, Semiconductor R&D Center, Samsung Electronics Co. Ltd., 1-1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea
  5.Metrology & Inspection Technology Team, Global Manufacturing & Infra Technology, Samsung Electronics Co. Ltd., 1-1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea
  6.Process Development, Semiconductor R&D Center, Samsung Electronics Co. Ltd., 1-1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea
  7.Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan
  8.Research Institute for Interdisciplinary Science, Okayama University, 3-1-1 Tsushimanaka, Kita-ku, Okayama 700-8530, Japan
- Author bio：
  
  Masayoshi Tonouchi (tonouchi@okayama-u.ac.jp)
- Funds：
- DOI：10.1038/s41377-025-01911-0
  中图分类号：
- 收稿日期：2024-07-30，
  
  修回日期：2025-04-11，
  
  录用日期：2025-05-26，
  
  网络出版日期：2025-06-20，
  
  纸质出版日期：2025-08-31
- Accepted：
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Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy[J]. LSA, 2025,14(8):2279-2288.

Murakami, F. et al. Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy. Light: Science & Applications, 14, 2279-2288 (2025).
Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy[J]. LSA, 2025,14(8):2279-2288. DOI： 10.1038/s41377-025-01911-0.

Murakami, F. et al. Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy. Light: Science & Applications, 14, 2279-2288 (2025). DOI： 10.1038/s41377-025-01911-0.

摘要

Abstract

Buried channel array transistors enable fast and high-density integrated devices. The depth of the PN junction and carrier dynamics at the depletion layer in silicon wafers have a crucial influence on their performance and reliability. Therefore

rapid and non-contact/non-destructive inspection tools are necessary to accelerate the semiconductor industry. Despite the great efforts in this field

realizing a technique to probe the junction depth and carrier dynamics at the PN junction inside wafers remains challenging. Herein

we propose a new approach to access PN junctions embedded in wafers using terahertz (THz) emission spectroscopy. THz emission measurements and simulations demonstrate that the amplitude and polarity of THz emissions reflect the junction depth and carrier dynamics at the PN junctions. It allows us to evaluate the junction depth non-destructively with nanometer-scale accuracy

surpassing the limits of traditional techniques. Laser-induced THz emission spectroscopy is a promising method for the sensitive and non-contact/non-destructive evaluation of Si wafers and will benefit the modern semiconductor industry.

关键词

Keywords

references

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