Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
Zhongwei Man (zwman@bjtu.edu.cn)
Aiwei Tang (awtang@bjtu.edu.cn)
收稿日期:2025-03-02,
修回日期:2025-05-23,
录用日期:2025-06-07,
网络出版日期:2025-07-24,
纸质出版日期:2025-09-30
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Rigid crosslinker-assisted nondestructive direct photolithograph for patterned QLED displays[J]. LSA, 2025,14(9):2656-2664.
Chen, Z. et al. Rigid crosslinker-assisted nondestructive direct photolithograph for patterned QLED displays. Light: Science & Applications, 14, 2656-2664 (2025).
Rigid crosslinker-assisted nondestructive direct photolithograph for patterned QLED displays[J]. LSA, 2025,14(9):2656-2664. DOI: 10.1038/s41377-025-01918-7.
Chen, Z. et al. Rigid crosslinker-assisted nondestructive direct photolithograph for patterned QLED displays. Light: Science & Applications, 14, 2656-2664 (2025). DOI: 10.1038/s41377-025-01918-7.
Recently
colloidal quantum dots (QDs) with high luminescent efficiency and tunable colors have become ideal materials for next-generation display devices. Direct photolithography is a powerful tool for patterning QD devices
but it faces the serious issue of degradation in the photophysical properties of the patterned QDs. Here
we use relatively rigid cyclopentane as a bridging group to design the crosslinker CPTA
achieving high-resolution direct photolithography of QDs with nearly nondestructive under ambient conditions. The key to the crosslinker design is the introduction of a rigid bridging group that elevates the LUMO level
providing a stronger energy barrier to prevent QD electrons from being trapped or undergoing non-radiative recombination
thus preserving their PL and EL properties. The efficient and high-resolution RGB line and dot arrays were fabricated with pixel sizes down to 1 μm and a resolution of up to 6350 PPI. The patterned RGB QD films
especially red QDs
maintained their optical and optoelectronic properties
with patterned red QLEDs achieving peak external quantum efficiency (EQE) of 21% and a maximum luminance (
L
max
) of ~180
000 cd m
-2
matching pr
istine devices. These results highlight the importance of photo-crosslinker design for nondestructive QDs patterning
paving the way for advanced display applications in patterned QLED technology.
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