State Key Laboratory of Quantum Functional Materials, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Shuming Chen (chen.sm@sustech.edu.cn)
收稿:2025-03-12,
修回:2025-07-13,
录用:2025-07-21,
网络出版:2025-08-19,
纸质出版:2025-10-31
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Fengshou Tian, Tianhong Zhou, Xuanyu Zhang, 等. Electrically pumped surface-emitting amplified spontaneous emission from colloidal quantum dots[J]. Light: Science & Applications, 2025,14(10):3012-3021.
Tian, F. S. et al. Electrically pumped surface-emitting amplified spontaneous emission from colloidal quantum dots. Light: Science & Applications, 14, 3012-3021 (2025).
Fengshou Tian, Tianhong Zhou, Xuanyu Zhang, 等. Electrically pumped surface-emitting amplified spontaneous emission from colloidal quantum dots[J]. Light: Science & Applications, 2025,14(10):3012-3021. DOI: 10.1038/s41377-025-01972-1.
Tian, F. S. et al. Electrically pumped surface-emitting amplified spontaneous emission from colloidal quantum dots. Light: Science & Applications, 14, 3012-3021 (2025). DOI: 10.1038/s41377-025-01972-1.
Colloidal quantum dots (QDs) are promising gain materials for realizing solution-processable
wavelength-tunable and low-cost laser diodes. However
achieving electrically pumped amplified spontaneous emission (ASE) in QDs
a prerequisite for lasing
is hampered by the low net optical gain and low current injection of the diodes. Here we demonstrate electrically pumped and surface-emitting ASE from QDs by electro-thermal-optically co-designing a quantum-dot light-emitting diode (QLED) with high net optical gain and high current injection. By developing a top-emitting cavity featuring a Ag/indium-zinc-oxide (IZO) bottom reflective electrode and a IZO/Ag top semi-transparent electrode
the QD emission is effectively resonated; moreover
not only are the surface plasmon polariton losses induced by the metallic electrodes completely eliminated
but also the optical field can be confined primarily within the QDs
resulting in a reduction in loss and a 2-fold enhancement in gain. As a result
the QLED exhibits surface-emitting ASE with a threshold of 10 μJ cm
−2
when pumped by a 100 fs laser at 77 K. By building the QLED directly on a Si heat sink and driving the QLED with an ns-pulsed current source
the Joule heat is effectively dissipated
allowing the QLED to operate stably even at a high current of 2000 A cm
−2
. At 153 K and an injection current of 94 A cm
−2
the QLED demonstrates surface-emitting ASE with strong directionality
high intensity and narrow bandwidth. The developed QLED
capable of generating surface-emitting ASE
paves the way for the development of QD based vertical cavity surface-emitting laser diodes.
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