Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications

Xingfa Gao; Yuzhen Huang; Rixuan Wang; Yinglun Sun; Lai Wang

doi:10.1038/s41377-025-02052-0

Your Location：

Home >

Browse articles >

Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications

Review

- Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications
- Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications
- Light: Science & Applications 2026年15卷第5期页码：1419-1439
- Affiliations：
  
  1.Institute of Medical Engineering and Interdisciplinary Research, Medical Science and Technology Innovation Center, Shandong First Medical University & Shandong Academy of Medical Sciences, 250117 Jinan, China
  2.Medical Engineering and Technology Research Center, School of Radiology, Shandong First Medical University & Shandong Academy of Medical Sciences, 271016 Taian, China
  3.State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies, and Department of Electronic Engineering, Tsinghua University, 100084 Beijing, China
- Author bio：
  
  Yinglun Sun (sunyinglun@sdfmu.edu.cn)
  Lai Wang (wanglai@tsinghua.edu.cn)
- Funds：
- DOI：10.1038/s41377-025-02052-0
  中图分类号：
- 收稿：2025-03-25，
  
  修回：2025-09-09，
  
  录用：2025-09-15，
  
  网络首发：2026-03-03，
  
  纸质出版：2026-05-31
- Accepted：
Scan QR Code
Xingfa Gao, Yuzhen Huang, Rixuan Wang, 等. Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications[J]. Light: Science & Applications, 2026,15(5):1419-1439.

Gao, X. F. et al. Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications. Light: Science & Applications, 15, 1419-1439 (2026).
Xingfa Gao, Yuzhen Huang, Rixuan Wang, 等. Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications[J]. Light: Science & Applications, 2026,15(5):1419-1439. DOI： 10.1038/s41377-025-02052-0.

Gao, X. F. et al. Advancing flexible optoelectronics with Ⅲ-nitride semiconductors: from materials to applications. Light: Science & Applications, 15, 1419-1439 (2026). DOI： 10.1038/s41377-025-02052-0.

摘要

Abstract

The rapid evolution of wearable technology

interconnected devices

and medical devices is driving innovation in advanced materials for flexible optoelectronics. Ⅲ-nitride semiconductors

with their exceptional optoelectronic properties

strong piezotronic and piezo-phototronic effects

biocompatibility

and thermal/chemical/mechanical stability

present a compelling alternative to traditional organic and Si-based inorganic materials. Despite significant research efforts

a systematic review summarizing the advancements and challenges in Ⅲ-nitride flexible optoelectronics is lacking. This article provides a comprehensive overview of recent developments in this field. It begins by highlighting the advantages of Ⅲ-nitride semiconductors for flexible optoelectronics. The article then discusses the fabrication techniques for Ⅲ-nitride flexible devices

covering materials growth

film exfoliation and transfer

as well as functional micro/nanostructures. A wide range of flexible applications of Ⅲ-nitrides are explored

including flexible displays

implantable optogenetic devices

wearable photodetectors

and flexible mechanical sensors. Finally

challenges and potential solutions related to device fabrication

performance enhancement

theoretical modeling

and system integration are discussed. This work serves as a foundational reference and roadmap for further advancements in Ⅲ-nitride flexible optoelectronics.

关键词

Keywords

references

Chang, S. H. et al. Flexible and stretchable light-emitting diodes and photodetectors for human-centric optoelectronics. Chem. Rev. 124 , 768–859 (2024)..

Pan, T. et al. A flexible, multifunctional, optoelectronic anticounterfeiting device from high-performance organic light-emitting paper. Light Sci. Appl. 11 , 59 (2022)..

Gong, S. et al. Materials-driven soft wearable bioelectronics for connected healthcare. Chem. Rev. 124 , 455–553 (2024)..

Li, Y. & Su, Y. K. Mass-produced and uniformly luminescent photochromic fibers toward future interactive wearable displays. Light Sci. Appl. 13 , 79 (2024)..

Lee, E. K. et al. Toward environmentally robust organic electronics: approaches and applications. Adv. Mater. 29 , 1703638 (2017)..

Lee, H. E. et al. Monolithic flexible vertical GaN light-emitting diodes for a transparent wireless brain optical stimulator. Adv. Mater. 30 , 1800649 (2018)..

Service, R. F.Inorganic electronics begin to flex their muscle. Science 312 , 1593–1594 (2006)..

Li, Y. F. Ⅲ-nitride materials: properties, growth, and applications. Crystals 14 , 390 (2024)..

Li, Q. B. et al. Research progress in the postprocessing and application of GaN crystal. CrystEngComm 25 , 715–725 (2023)..

Bosch, J. et al. Fabrication strategies of flexible light sources based on micro/nano Ⅲ-nitride LEDs. J. Inf. Disp. 25 , 61–73 (2024)..

Wang, Z. L. Nanopiezotronics. Adv. Mater. 19 , 889–892 (2007)..

Hu, Y. F. et al. Designing the electric transport characteristics of ZnO micro/nanowire devices by coupling piezoelectric and photoexcitation effects. ACS Nano 4 , 1234–1240 (2010)..

Wu, W. Z. & Wang, Z. L. Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics. Nat. Rev. Mater. 1 , 16031 (2016)..

Du, C. H., Hu, W. G. & Wang, Z. L. Recent progress on piezotronic and piezo-phototronic eff ects in Ⅲ-group nitride devices and applications. Adv. Eng. Mater. 20 , 1700760 (2018)..

Cui, S. Y. et al. Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient Ⅲ-nitride optoelectronic devices. Sci. Bull. 69 , 2080–2088 (2024)..

Chung, K., Lee, C. H. & Yi, G. C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science 330 , 655–657 (2010)..

Kim, Y. et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature 544 , 340–343 (2017)..

Ahn, J. H. et al. Heterogeneous three-dimensional electronics by use of printed semiconductor nanomaterials. Science 314 , 1754–1757 (2006)..

Song, W. R. et al. Recent advances in mechanically transferable Ⅲ-Nitride based on 2D buffer strategy. Adv. Funct. Mater. 33 , 2209880 (2023)..

Zhao, C. et al. Ⅲ-nitride nanowires on unconventional substrates: from materials to optoelectronic device applications. Prog. Quant. Electron. 61 , 1–31 (2018)..

Jeong, J. et al. Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle. Sci. Adv. 6 , eaaz5180 (2020)..

Li, J. T. et al. Vertically stacked skin-like active-matrix display with ultrahigh aperture ratio. Light Sci. Appl. 13 , 177 (2024)..

Xie, Z. Y. et al. High-mobility emissive organic semiconductors: an emerging class of multifunctional materials. Nat. Rev. Mater. 9 , 837–839 (2024)..

Glavin, N. R. et al. Flexible gallium nitride for high-performance, strainable radio-frequency devices. Adv. Mater. 29 , 1701838 (2017)..

Leszcynski, M., Grzegory, I. & Bockowski, M. X-ray examination of GaN single crystals grown at high hydrostatic pressure. J. Cryst. Growth 126 , 601–604 (1993)..

Nakamura, S. Nobel Lecture: background story of the invention of efficient blue InGaN light emitting diodes. Rev. Mod. Phys. 87 , 1139–1151 (2015)..

Cai, Q. et al. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays. Light Sci. Appl. 10 , 94 (2021)..

Bhuiyan, A. G. et al. InGaN solar cells: present state of the art and important challenges. IEEE J. Photovolt. 2 , 276–293 (2012)..

Zhu, G. Y. et al. Research progress of gallium nitride microdisk cavity laser. Front. Mater. 9 , 845885 (2022)..

Wang, Z. L. Piezopotential gated nanowire devices: piezotronics and piezo-phototronics. Nano Today 5 , 540–552 (2010)..

Pan, C. F., Zhai, J. Y. & Wang, Z. L. Piezotronics and piezo-phototronics of third generation semiconductor nanowires. Chem. Rev. 119 , 9303–9359 (2019)..

Nguyen, N. K. et al. Wide-band-gap semiconductors for biointegrated electronics: recent advances and future directions. ACS Appl. Electron. Mater. 3 , 1959–1981 (2021)..

Gueddim, A., Bouarissa, N. & Ziani, H. Effect of strain on the electronic structure and optical spectra of two-dimensional monolayer GaN. J. Phys. Chem. Solids 190 , 111993 (2024)..

Yu, J. D. et al. Van der Waals epitaxy of Ⅲ-nitride semiconductors based on 2D materials for flexible applications. Adv. Mater. 32 , 1903407 (2020)..

Luo, Y. et al. Strong light-matter coupling in van der Waals materials. Light Sci. Appl. 13 , 203 (2024)..

Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499 , 419–425 (2013)..

Jaegermann, W. et al. Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe(0001) films on Si(111), Si(110) and Si(100). Thin Solid Films 380 , 276–281 (2000)..

Bakti Utama, M. I. et al. Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy. Nanoscale 5 , 3570–3588 (2013)..

Chang, H. L. et al. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate. Appl. Phys. Lett. 114 , 091107 (2019)..

Kong, W. et al. Polarity governs atomic interaction through two-dimensional materials. Nat. Mater. 17 , 999–1004 (2018)..

Fu, W. Y. & Choi, H. W. Progress and prospects of Ⅲ-nitride optoelectronic devices adopting lift-off processes. J. Appl. Phys. 132 , 060903 (2022)..

Zang, K. Y. et al. A new method for lift-off of Ⅲ-nitride semiconductors for heterogeneous integration. Nanoscale Res. Lett. 5 , 1051–1056 (2010)..

Wong, W. S. et al. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off. Appl. Phys. Lett. 75 , 1360–1362 (1999)..

Cho, H. K. et al. Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate. Semiconduct. Sci. Technol. 32 , 12LT01 (2017)..

Carlson, A. et al. Transfer printing techniques for materials assembly and micro/nanodevice fabrication. Adv. Mater. 24 , 5284–5318 (2012)..

Tran, T. M. et al. Transferrable GaN-based micro-LED heterostr uctures grown on h-BN for optogenetic applications. J. Cryst. Growth 650 , 127979 (2025)..

Cai, J. H. et al. Neuron-inspired CsPbBr 3 /PDMS nanospheres for multi-dimensional sensing and interactive displays. Light Sci. Appl. 14 , 55 (2025)..

Su, J. et al. Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy. Appl. Surf. Sci. 526 , 146747 (2020)..

Kim, J. et al. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nat. Commun. 5 , 4836 (2014)..

Xiao, Y. et al. Single-nanowire single-mode laser. Nano Lett. 11 , 1122–1126 (2011)..

Li, Z. et al. Surface-polarity-induced spatial charge separation boosts photocatalytic overall water splitting on GaN nanorod arrays. Angew. Chem. Int. Ed. 59 , 935–942 (2020)..

Salomon, S., Eymery, J. & Pauliac-Vaujour, E. GaN wire-based Langmuir-Blodgett films for self-powered flexible strain sensors. Nanotechnology 25 , 375502 (2014)..

El Kacimi, A., Pauliac-Vaujour, E. & Eymery, J. Flexible capacitive piezoelectric sensor with vertically aligned ultralong gan wires. ACS Appl. Mater. Interfaces 10 , 4794–4800 (2018)..

Hong, Y. J. et al. One-dimensional semiconductor nanostructures grown on two-dimensional nanomaterials for flexible device applications. APL Mater. 9 , 060907 (2021)..

Lee, C. H. et al. Flexible inorganic nanostructure light-emitting diodes fabricated on graphene films. Adv. Mater. 23 , 4614–4619 (2011)..

Zhao, C. et al. Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters. Nano Lett. 16 , 1056–1063 (2016)..

Zhao, C. et al. Droop-Free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics. Nano Lett. 16 , 4616–4623 (2016)..

Ebaid, M. et al. Unbiased photocatalytic hydrogen generation from pure wateron stable Ir-treated In 0.33 Ga 0.67 N nanorods. Nano Energy 37 , 158–167 (2017)..

Yu, Y. et al. Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes. Light Sci. Appl. 10 , 117 (2021)..

Yu, J. D. et al. Transferable InGaN quantum well grown at low temperature on amorphous substrates by plasma-assisted molecular beam epitaxy. Cryst. Growth Des. 21 , 3831–3837 (2021)..

Lu, T. X. et al. Exploring inorganic flexible electronics: Ⅲ-nitride light-emitting diode epilayers on wafer-scale exfoliable mica substrate. Adv. Electron. Mater. 10 , 2400256 (2024)..

Prajapat, P., Singh, D. K. & Gupta, G. Growth of Ⅲ-nitrides by molecular beam epitaxy: unconventional substrates for conventional semiconductors. Mater. Sci. Eng. B 295 , 116574 (2023)..

Pradhan, B. K. et al. Role of surface chemistry of Ta metal foil on the growth of GaN nanorods by laser molecular beam epitaxy and their field emission characteristics. ACS Appl. Mater. Interfaces 16 , 13178–13190 (2024)..

Kim, H. S. et al. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state l ighting. Proc. Natl Acad. Sci. USA 108 , 10072–10077 (2011)..

Yang, G. et al. GaN-based light-emitting diodes on graphene-coated flexible substrates. Opt. Express 22 , A812–A817 (2014)..

Tian, P. F. et al. Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays. Opt. Express 24 , 699–707 (2016)..

Chung, K. et al. Flexible GaN light-emitting diodes using GaN microdisks epitaxial laterally overgrown on graphene dots. Adv. Mater. 28 , 7688–7694 (2016)..

Yang, D. W. et al. Self-contained InGaN/GaN micro-crystal arrays as individually addressable multi-color emitting pixels on a deformable substrate. J. Alloy. Compd. 803 , 826–833 (2019)..

Chung, K. et al. GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer. Nano Energy 60 , 82–86 (2019)..

Lu, B. et al. Color difference and thermal stability of flexible transparent InGaN/GaN multiple quantum wells mini-LED arrays. IEEE Electron Device Lett. 41 , 1040–1043 (2020)..

Lee, K. et al. Flexible and monolithically integrated multicolor light emitting diodes using morphology-controlled GaN microstructures grown on graphene films. Sci. Rep. 10 , 19677 (2020)..

Jia, Y. Q. et al. High-quality transferred GaN-based light-emitting diodes through oxygen-assisted plasma patterning of graphene. ACS Appl. Mater. Interfaces 13 , 32442–32449 (2021)..

Karrakchou, S. et al. Monolithic free-standing large-area vertical Ⅲ-N light-emitting diode arrays by one-step h-BN-based thermomechanical self-lift-off and transfer. ACS Appl. Electron. Mater. 3 , 2614–2621 (2021)..

Yulianto, N. et al. Wafer-scale transfer route for top–down Ⅲ-nitride nanowire LED arrays based on the femtosecond laser lift-off technique. Microsyst. Nanoeng. 7 , 32 (2021)..

Wang, L. L. et al. Wafer-scale transferrable GaN enabled by hexagonal boron nitride for flexible light-emitting diode. Small 20 , 2306132 (2024)..

Huang, Y. G. et al. Mini-LED, micro-LED and oLED displays: present status and future perspectives. Light Sci. Appl. 9 , 105 (2020)..

van den Ende, D. A. et al. Large area flexible lighting foils using distributed bare LED dies on polyester substrates. Microelectron. Reliab. 53 , 1907–1915 (2013)..

Dai, X. et al. Flexible light-emitting diodes based on vertical nitride nanowires. Nano Lett. 15 , 6958–6964 (2015)..

Li, G. J. et al. Color-conversion displays: current status and future outlook. Light Sci. Appl. 13 , 301 (2024)..

Kim, T. I. et al. High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates. Small 8 , 1643–1649 (2012)..

Reddy, J. W. et al. GaN μLED arrays in parylene C substrate for flexible implantable optogenetics: fabrication and modeling. Proceedings of the Conference on Lasers and Electro-Optics: Applications and Technology (Optica Publishing Group, Washington, DC, USA, 2020, ATh3K. 5).

Kim, T. I. et al. Injectable, cellular-scale optoelectronics with applications for wireless optogenetics. Science 340 , 211–216 (2013)..

Rajalingham, R. et al. Chronically implantable LED arrays for behavioral optogenetics in primates. Nat. Methods 18 , 1112–1116 (2021)..

Peng, M. Z. et al. Flexible self-powered GaN ultraviolet photoswitch with piezo-phototronic effect enhanced on/off ratio. ACS Nano 10 , 1572–1579 (2016)..

Liu, Y. et al. Transferable GaN films on Graphene/SiC by van der Waals epitaxy for flexible devices. Phys. Status Solidi (A) 216 , 1801027 (2019)..

Heo, S. Y. et al. Wireless, battery-free, flexible, miniaturized dosimeters monitor exposure to solar radiation and to light for phototherapy. Sci. Transl. Med. 10 , eaau1643 (2018)..

Chen, Y. et al. Centimeter-transferable Ⅲ-nitride membrane enabled by interfacial adhesion control for a flexible photosensitive device. ACS Appl. Mater. Interfaces 15 , 31954–31965 (2023)..

Lamanna, L. et al. Photoresponse of the AlN-based SAW device on polymeric and silicon substrates. IEEE Sens. J. 21 , 9675–9681 (2021)..

Liu, X. Q. et al. Enhancing photoresponsivity of self-aligned MoS 2 field-effect transistors by piezo-phototronic effect from GaN nanowires. ACS Nano 10 , 7451–7457 (2016)..

Lamanna, L. et al. Flexible dual-wave mode AlN-based surface acoustic wave device on polymeric substrate. IEEE Electron Device Lett. 41 , 1692–1695 (2020)..

Chen, R. F. et al. Strain-induced polarization modulation at GaN/Ti interface for flexible thin-film sensor. Semiconductor Sci. Technol. 39 , 075022 (2024)..

Peng, M. Z. et al. High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging. ACS Nano 9 , 3143–3150 (2015)..

Yang, D. W. et al. Large wavelength response to pressure enabled in InGaN/GaN microcrystal LEDs with 3D architectures. ACS Photon. 7 , 1122–1128 (2020)..

Yin, J. H. et al. High-resolution optical three-axis tactile microsensor based on Ⅲ-nitride devices with integrated PDMS bumps. IEEE Electron Device Lett. 44 , 2035–2038 (2023)..

Park, J. B. et al. Metal catalyst-assisted growth of GaN nanowires on graphene films for flexible photocatalyst applications. Curr. Appl. Phys. 14 , 1437–1442 (2014)..

Ayari, T. et al. Heterogeneous integration of thin-film InGaN-based solar cells on foreign substrates with enhanced performance. ACS Photon. 5 , 3003–3008 (2018)..

Jia, Y. Q. et al. Flexible high-stability self-variable-voltage monolithic integrated system achieved by high-brightness LED for information transmission. Small 17 , 2105207 (2021)..

Du, C. H. et al. Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars. Small 11 , 6071–6077 (2015)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Single-shot, reference-less computational wavefront sensing for complex optical fields

Robust chirality through merging BICs

Gapless tunable intense terahertz pulse generation in strained diamond

Quasi-BIC metasurfaces enable rapid, localized singlet-oxygen generation

Light people: Professor Mengkun Liu