One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer

Eslam M. B. Fahmy; Zhongtao Ouyang; Davide Colucci; Nicolas Le Thomas; Joris Van Campenhout; Bernardette Kunert; Dries Van Thourhout

doi:10.1038/s41377-025-02061-z

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One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer

Original Articles

- One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer
- One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer
- Light: Science & Applications 2026年15卷第4期页码：1350-1360
- Affiliations：
  
  1.Photonics Research Group, Department of Information Technology (INTEC), Ghent University - imec, Ghent, Belgium
  2.imec, Kapeldreef 75, 3001 Heverlee, Belgium
- Author bio：
  
  Dries Van Thourhout (dries.vanthourhout@ugent.be)
- Funds：
- DOI：10.1038/s41377-025-02061-z
  中图分类号：
- 收稿：2025-03-12，
  
  修回：2025-09-16，
  
  录用：2025-09-17，
  
  网络首发：2026-02-24，
  
  纸质出版：2026-04-30
- Accepted：
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Eslam M. B. Fahmy, Zhongtao Ouyang, Davide Colucci, 等. One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer[J]. Light: Science & Applications, 2026,15(4):1350-1360.

Fahmy, E. M. B. et al. One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer. Light: Science & Applications, 15, 1350-1360 (2026).
Eslam M. B. Fahmy, Zhongtao Ouyang, Davide Colucci, 等. One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer[J]. Light: Science & Applications, 2026,15(4):1350-1360. DOI： 10.1038/s41377-025-02061-z.

Fahmy, E. M. B. et al. One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer. Light: Science & Applications, 15, 1350-1360 (2026). DOI： 10.1038/s41377-025-02061-z.

摘要

Abstract

The epitaxial growth of high-quality InGaAs/GaAs nano-ridges on silicon using aspect ratio trapping (ART) and nano-ridge engineering (NRE) has paved the way for the monolithic integration of laser sources on silicon. This breakthrough holds significant potential for integrated silicon photonics

enabling a wide range of applications and opening new research avenues. In this approach

the active material is grown not as a uniform layer but rather as parallel nano-ridge (NR) arrays. Leveraging this intrinsic feature of NRE

we propose a novel approach for realizing a surface-emitting laser and present the first experimental demonstration of this device. The device consists of an array of nano-ridges forming an in-plane cavity that can lase and couple light vertically. Based on an extensive design study

we demonstrate an optically pumped surface-emitting epitaxially grown nano-ridge laser (NRSEL) integrated on a 300 mm silicon wafer

which

to the best of our knowledge

is the first of its kind. We experimentally show lasing at the band edge of a photonic crystal by exploiting symmetry-protected bound states in the continuum (BICs). Additionally

we thoroughly characterize the far-field pattern. These findings lay the foundation for realizing high-density

integrated

and cost-effective electrically injected surface-emitting lasers on silicon.

关键词

Keywords

references

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