1.State Key Laboratory of New Ceramic Materials, School of Materials Science and Engineering, Tsinghua University, Beijing, China
2.Beijing National Research Centre for Information Science and Technology (BNRist), State Key Laboratory of Space Network and Communications, Department of Electronic Engineering, Tsinghua University, Beijing, China
3.State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China
4.Zhejiang Key Laboratory of Advanced Solid State Energy Storage Technology and Applications, Taizhou Institute of Zhejiang University, Taizhou, Zhejiang, China
5.Institute of Fundamental and Transdisciplinary Research, Zhejiang University, Hangzhou, China
6.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
Changzheng Sun (czsun@tsinghua.edu.cn)
Qian Li (qianli_mse@tsinghua.edu.cn)
收稿:2025-06-03,
修回:2025-09-22,
录用:2025-10-02,
网络出版:2026-01-02,
纸质出版:2026-01-31
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Chenguang Deng, Yutong He, Wenfeng Yang, 等. Self-buffered epitaxy of barium titanate on oxide insulators enables high-performance electro-optic modulators[J]. Light: Science & Applications, 2026,15(1):300-309.
Deng, C. G. et al. Self-buffered epitaxy of barium titanate on oxide insulators enables high-performance electro-optic modulators. Light: Science & Applications, 15, 300-309 (2026).
Chenguang Deng, Yutong He, Wenfeng Yang, 等. Self-buffered epitaxy of barium titanate on oxide insulators enables high-performance electro-optic modulators[J]. Light: Science & Applications, 2026,15(1):300-309. DOI: 10.1038/s41377-025-02081-9.
Deng, C. G. et al. Self-buffered epitaxy of barium titanate on oxide insulators enables high-performance electro-optic modulators. Light: Science & Applications, 15, 300-309 (2026). DOI: 10.1038/s41377-025-02081-9.
Integrated photonics has emerged as a promising alternative for data communication and computing
ferroelectric BaTiO
3
(BTO) stands out for its exceptional electro-optic response among candidate materials. However
direct epitaxial growth of BTO entails a fundamental trade-off: substrates with low refractive index are required for strong optical confinement
yet those with large lattice mismatch degrade film crystalline quality and electro-optic performance. We report a buffer-free
strain-engineered approach to integrate high-performance BTO thin films directly on LaAlO
3
-Sr
2
TaAlO
6
(LSAT) oxide-insulator substrates. By exploiting a self-buffer layer formed during the initial growth stage
we achieve periodic in-plane strain modulation that stabilizes a polymorphic phase boundary with orthorhombic polar nanoregions
yielding a Pockels coefficient exceeding 358 pm V⁻¹ and a Curie temperature raised to 200 ℃. Leveraging this material platform
we demonstrate the first realization of a Mach–Zehnder modulator using epitaxial BTO on LSAT. The device exhibits a half-wave voltage–length product of 0.7 V cm at 1550 nm
which closely matches finite-element simulations
and supports a 6-dB electro-optic bandwidth of 28 GHz. Our results
validate BTO on LSAT as a viable photonic platform for scalable
low-voltage and high-speed modulators.
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