1.Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, China
2.State Key Laboratory of Pulsed Power Laser Technology, Hefei, China
3.Optics Valley Laboratory, Wuhan, China
4.Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wuhan, China
5.JFS Laboratory, Wuhan, China
6.Key Laboratory of Photoelectric Conversion and Utilization of Solar Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
7.Shenzhen Huazhong University of Science and Technology Research Institute, Wuhan, China
Chao Chen (cchen@hust.edu.cn)
Liang Gao (highlight@hust.edu.cn)
Jiang Tang (jtang@mail.hust.edu.cn)
收稿:2025-05-23,
修回:2025-10-15,
录用:2025-11-07,
网络首发:2026-01-20,
纸质出版:2026-03-31
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Ciyu Ge, Chengjie Deng, Jiaxing Zhu, 等. A near-infrared Sn-Pb perovskite imager with monolithic integration[J]. Light: Science & Applications, 2026,15(3):814-823.
Ge, C. Y. et al. A near-infrared Sn-Pb perovskite imager with monolithic integration. Light: Science & Applications, 15, 814-823 (2026).
Ciyu Ge, Chengjie Deng, Jiaxing Zhu, 等. A near-infrared Sn-Pb perovskite imager with monolithic integration[J]. Light: Science & Applications, 2026,15(3):814-823. DOI: 10.1038/s41377-025-02127-y.
Ge, C. Y. et al. A near-infrared Sn-Pb perovskite imager with monolithic integration. Light: Science & Applications, 15, 814-823 (2026). DOI: 10.1038/s41377-025-02127-y.
Solution-processed Sn-Pb perovskites have emerged as promising candidates for near-in
frared (NIR) photodetectors due to their low-cost
tunable bandgap and scalable fabrication. However
Sn
2+
oxidation creates Sn vacancies and undesirable p-type doping
resulting in high dark current and limited detectivity
which hinder the practical deployment of Sn-Pb perovskite photodetectors. Herein
we propose a Sn(SCN)
2
inorganic molecular surface passivation strategy to suppress Sn
2+
oxidation
significantly reduce surface defect density and enhance the optoelectronic properties (a dark current density of 10 nA cm
−2
at a bias of −0.1 V and a high specific detectivity of ~1.6 × 10
13
Jones). Leveraging this approach
we report the monolithically integrated Sn-Pb perovskite NIR imager with a complementary metal-oxide-semiconductor readout circuit. The imager
featuring a 640 × 512 pixel array with a 15 μm pixel pitch
achieves an external quantum efficiency of 76% at 940 nm and a modulation transfer function of 206.5 LW/PH at 50%. Furthermore
the Sn-Pb perovskite imager demonstrates advanced material recognition capabilities
including liquid identification
underscoring its potential in chemical sensing
biomedical imaging and industrial inspection.
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