1.School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore, Singapore
2.School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore, Singapore
3.National Key Laboratory of Microwave Photonics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
4.School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
5.Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
6.School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
7.Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, Aalto, Finland
8.Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, China
Xingji Li (lxj0218@hit.edu.cn)
Qi Jie Wang (qjwang@ntu.edu.sg)
Zheng Liu (z.liu@ntu.edu.sg)
收稿:2025-03-22,
修回:2025-09-02,
录用:2025-11-07,
网络首发:2026-01-08,
纸质出版:2026-02-28
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Ruihuan Duan, Song Zhu, Xiaodong Xu, 等. Colossal infrared nonlinear optical anisotropy in a 2D charge-transfer Mott insulator[J]. Light: Science & Applications, 2026,15(2):647-657.
Duan, R. H. et al. Colossal infrared nonlinear optical anisotropy in a 2D charge-transfer Mott insulator. Light: Science & Applications, 15, 647-657 (2026).
Ruihuan Duan, Song Zhu, Xiaodong Xu, 等. Colossal infrared nonlinear optical anisotropy in a 2D charge-transfer Mott insulator[J]. Light: Science & Applications, 2026,15(2):647-657. DOI: 10.1038/s41377-025-02130-3.
Duan, R. H. et al. Colossal infrared nonlinear optical anisotropy in a 2D charge-transfer Mott insulator. Light: Science & Applications, 15, 647-657 (2026). DOI: 10.1038/s41377-025-02130-3.
Mott insulators are a unique class of materials whose insulating state originates from strong electron-electron correlations: the interactions localize charge carriers
and the resulting on-site Coulomb repulsion opens a charge gap
fundamentally different from conventional insulators
making these systems an exceptional platform for exploring exotic physical phenomena. Significantly
the interplay between strong correlations and charge transfer not only stabilizes the antiferromagnetic ground state but also endows the material with enriched properties
particularly in optics. Herein
we demonstrate a 2D antiferromagnetic charge-transfer Mott insulator
Vanadium Oxychloride (VOCl)
which shows giant third-harmonic generation (THG) anisotropy (
ρ
THG
=
I
x
/
I
y
where
I
x
and
I
y
represent the THG intensities corresponding to the excitation polarization parallel to crystal's
x
- and
y
-axes)
with
ρ
THG
reaching up to 187 at 1280 nm excitation wavelength. Notably
it is the highest THG anisotropic ratio within the van der Waals materials family. The nonlinear anisotropy is further modulated across a broadband infrared (IR) excitation wavelength range from 2028 to 1280 nm
during which
ρ
THG
rises from 2.6 to 187
corresponding to a 72-fold enhancement relative to its value at 2028 nm. Additionally
VOCl demonstrates layer-independent third-order susceptibilities (χ
(3)
~ 10
-19
m
2
/V
2
) and band structures attributed to its extremely weak interlayer electronic coupling. Moreover
the colossal THG anisotropic ratio in 2D VOCl can be ascribed to the synergistic effect of the correlated charge-transfer Mott insulator behavior and intrinsic
C
3
symmetry breaking
as supported by theoretical calculations. The colossal nonlinear optical anisotropy in 2D VOCl positions it as an excellent candidate for nanophotonic and optoelectronic applications
enabling next-generation nanodevices based on 2D correlated Mott insulators.
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