Mid-infrared InAs/InP quantum-dot lasers

Yangqian Wang; Hui Jia; Jae-Seong Park; Haotian Zeng; Igor P. Marko; Matthew Bentley; Khalil El Hajraoui; Shangfeng Liu; Bo Yang; Calum Dear; Mengxun Bai; Huiwen Deng; Chong Chen; Jiajing Yuan; Jun Li; Kongming Liu; Dominic A. Duffy; Zhao Yan; Zihao Wang; Stephen J. Sweeney; Qiandong Zhuang; Quentin M. Ramasse; Siming Chen; Mingchu Tang; Qiang Li; Alwyn Seeds; Huiyun Liu

doi:10.1038/s41377-025-02167-4

Your Location：

Home >

Browse articles >

Mid-infrared InAs/InP quantum-dot lasers

Original Articles

- Mid-infrared InAs/InP quantum-dot lasers
- Mid-infrared InAs/InP quantum-dot lasers
- Light: Science & Applications 2026年15卷第3期页码：766-777
- Affiliations：
  
  1.Department of Electronic and Electrical Engineering, University College London, London, UK
  2.James Watt School of Engineering, University of Glasgow, Glasgow, UK
  3.Physics Department, Lancaster University, Lancaster, UK
  4.SuperSTEM, SciTech Daresbury Science and Innovation Campus, Daresbury, UK
  5.York NanoCentre & Department of Physics, University of York, York, UK
  6.School of Physics and Astronomy, Cardiff University, Cardiff, UK
  7.Institute of Physics, Chinese Academy of Sciences, Beijing, China
  8.School of Chemical and Process Engineering and School of Physics and Astronomy, University of Leeds, Leeds, UK
- Author bio：
  
  Hui Jia (hui.jia@ucl.ac.uk)
  Jae-Seong Park (jae-seong.park@ucl.ac.uk)
- Funds：
- DOI：10.1038/s41377-025-02167-4
  中图分类号：
- 收稿：2025-08-15，
  
  修回：2025-11-18，
  
  录用：2025-12-11，
  
  网络首发：2026-01-12，
  
  纸质出版：2026-03-31
- Accepted：
Scan QR Code
Yangqian Wang, Hui Jia, Jae-Seong Park, 等. Mid-infrared InAs/InP quantum-dot lasers[J]. Light: Science & Applications, 2026,15(3):766-777.

Wang, Y. Q. et al. Mid-infrared InAs/InP quantum-dot lasers. Light: Science & Applications, 15, 766-777 (2026).
Yangqian Wang, Hui Jia, Jae-Seong Park, 等. Mid-infrared InAs/InP quantum-dot lasers[J]. Light: Science & Applications, 2026,15(3):766-777. DOI： 10.1038/s41377-025-02167-4.

Wang, Y. Q. et al. Mid-infrared InAs/InP quantum-dot lasers. Light: Science & Applications, 15, 766-777 (2026). DOI： 10.1038/s41377-025-02167-4.

摘要

Abstract

Mid-infrared semiconductor lasers operating in the 2.0–5.0 μm spectral range play an important role for various applications

including trace-gas detection

biomedical analysis

and free-space optical communication. InP-based quantum-well (QW) and quantum-dash (Qdash) lasers are promising alternatives to conventional GaSb-based QW lasers because of their lower cost and mature fabrication infrastructure. However

they suffer from high threshold current density (

) and limited operation temperatures. InAs/InP quantum-dot (QD) lasers theoretically offer lower

owing to their three-dimensional carrier confinement. Nevertheless

achieving high-density

uniform InAs/InP QDs with sufficient gain for lasing over 2 μm remains a major challenge. Here

we report the first demonstration of mid-infrared InAs/InP QD lasers emitting beyond 2 μm. Five-stack InAs/In

0.532

0.468

As/InP QDs grown by molecular-beam epitaxy exhibit room-temperature photoluminescence at 2.04 μm. Edge-emitting lasers achieve lasing at 2.018 μm with a low

of 589 A cm

−2

and a maximum operation temperature of 50 ℃. Notably

the

per layer (118 A cm

−2

) is the lowest ever reported for room-temperature InP-based mid-infrared lasers

outperforming QW/Qdash counterparts. These results pave the way for a new class of low-cost

high-performance mid-

infrared light sources using InAs/InP QDs

marking a notable step forward in the development of mid-infrared semiconductor lasers.

关键词

Keywords

references

Scholle, K. et al. 2 μm laser sources and their possible applications. in Frontiers in Guided Wave Optics and Optoelectronics (ed Pal, B.) (IntechOpen, 2010).

Lei, W. & Jagadish, C. Lasers and photodetectors for mid-infrared 2-3 μm applications. J. Appl. Phys. 104 , 091101 (2008)..

Yang, C. A. et al. High-power, high-spectral-purity GaSb-based laterally coupled distributed feedback lasers with metal gratings emitting at 2 μ m. Appl. Phys. Lett. 114 , 021102 (2019)..

Arafin, S. et al. Electrically pumped continuous-wave vertical-cavity surface-emitting lasers at ~ 2.6 μ m. Appl. Phys. Lett. 95 , 131120 (2009)..

Yin, Z. Y. & Tang, X. H. A review of energy bandgap engineering in Ⅲ–Ⅴ semiconductor alloys for mid-infrared laser applications. Solid-State Electron. 51 , 6–15 (2007)..

Sprengel, S. et al. Type-Ⅱ InP-based lasers emitting at 2.55 μ m. Appl. Phys. Lett. 100 , 041109 (2012)..

Jung, D. et al. Next-generation mid-infrared sources. J. Opt. 19 , 123001 (2017)..

Sprengel, S. et al. InP-based type-Ⅱ quantum-well lasers and LEDs. IEEE J. Sel. Top. Quantum Electron. 19 , 1900909 (2013)..

Gu, Y. & Zhang, Y. G. InP-based antimony-free MQW lasers in 2-3 μm band. in Optoelectronics - Materials and Devices (eds Pyshkin, S. L. & Ballato, J.) (IntechOpen, 2015).

Oishi, M., Yamamoto, M. & Kasaya, K. 2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers. IEEE Photonics Technol. Lett. 9 , 431–433 (1997)..

Gu, Y. et al. 2.4µm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature. Appl. Phys. Express 7 , 032701 (2014)..

Sweeney, S. J., Eales, T. D. & Marko, I. P. 1 - The physics of mid-infrared semiconductor materials and heterostructures. in Mid-infrared Optoelectronics (eds Tournié, E. & Cerutti, L.) 3–56 (Woodhead Publishing, 2020).

Arakawa, Y. & Sakaki, H. Multidimensional quantum well laser and temperature dependence of its threshold current. Appl. Phys. Lett. 40 , 939–941 (1982)..

Kageyama, T. et al. Extremely high temperature (220℃) continuous-wave operation of 1300-nm-range quantum-dot lasers. In Proc. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC) . 1–1 (Munich, Germany, IEEE, 2011).

Duan, J. et al. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidthenhancement factor. Appl. Phys. Lett. 112 , 251111 (2018)..

Liu, H. Y. et al. Improved performance of 1.3 μ m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. Appl. Phys. Lett. 85 , 704–706 (2004)..

Liu, Z. Z. et al. Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon. J. Lightwave Technol. 38 , 240–248 (2020)..

Marko, I. P. et al. Carrier transport and recombination in p -doped and intrinsic 1.3 μ m InAs/GaAs quantum-dot lasers. Appl. Phys. Lett. 87 , 211114 (2005)..

Lelarge, F. et al. Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μ m. IEEE J. Sel. Top. Quantum Electron. 13 , 111–124 (2007)..

Grillot, F. et al. 5 - Semiconductor quantum dot lasers: genesis, prospects, and challenges. in Quantum Photonics (eds Arakawa, Y. & Bimberg, D) 191–266 (Elsevier, 2024).

Chen, S. M. et al. Electrically pumped continuous-wave Ⅲ–Ⅴ quantum dot lasers on silicon. Nat. Photonics 10 , 307–311 (2016)..

Wei, W. Q. et al. Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI. Light Sci. Appl. 12 , 84 (2023)..

Shi, B. & Lau, K. M. Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique. J. Cryst. Growth 433 , 19–23 (2016)..

Bauer, S. et al. 1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: the impact of atom-like optical gain material for optoelectronics devices. IEEE Nanotechnol. Mag. 15 , 23–36 (2021)..

Ponchet, A. et al. Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate. Appl. Phys. Lett. 114 , 173102 (2019)..

Qiu, Y. M. & Uhl,D. Effect of thin GaAs interface layer on InAs quantum dots grown on InGaAs/InP using metalorganic vapor phase epitaxy. J. Cryst. Growth 257 , 225–230 (2003)..

Tang, X. H. et al. Mid-infrared emission from InAs quantum dots grown by metal–organic vapor phase epitaxy. IEEE Trans. Nanotechnol. 5 , 683–686 (2006)..

Yin, Z. Y. et al. Effects of In x Ga 1− x As matrix layer on InAs quantum dot formation and their emission wavelength. J. Appl. Phys. 100 , 033109 (2006)..

Yin, Z. Y. et al. First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth. Nanotechnology 19 , 085603 (2008)..

Cotta, M. A. et al. Kinetic surface roughening in molecular beam epitaxy of InP. Phys. Rev. Lett. 70 , 4106–4109 (1993)..

Bansal, B. et al. Growth kinetics effects on self-assembled InAs/InP quantum dots. Appl. Phys. Lett. 87 , 203104 (2005)..

Gilfert, C., Pavelescu, E. M. & Reithmaier, J. P. Influence of the As 2 /As 4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100). Appl. Phys. Lett. 96 , 191903 (2010)..

Brault, J. et al. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001). Appl. Phys. Lett. 73 , 2932–2934 (1998)..

Wang, X. Q. et al. Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage. J. Vac. Sci. Technol. B 18 , 2523–2526 (2000)..

Wang, B. et al. InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55µm lasers. Opt. Mater. Express 14 , 1074–1084 (2024)..

Liao, X. Z. et al. Quantum dot/substrate interaction in InAs/In 0.53 Ga 0.47 As/InP(001). Appl. Phys. Lett. 84 , 511–513 (2004)..

Banyoudeh, S. & Reithmaier, J. P. High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity. J. Cryst. Growth 425 , 299–302 (2015)..

Wang, H. M. et al. Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition. J. Cryst. Growth 578 , 126424 (2022)..

Marko, I. P. et al. The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure. IEEE J. Sel. Top. Quantum Electron. 9 , 1300–1307 (2003)..

Pennycook, S. J. & Nellist, P. D. Scanning Transmission Electron Microscopy: Imaging and Analysis (New York, Springer, 2011).

Hasan, S. et al. InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(001) substrate. J. Cryst. Growth 531 , 125342 (2020)..

Yuan, J. J. et al. Indium-flush technique for C-band InAs/InP quantum dots. APL Mater. 12 , 121109 (2024)..

Tsatsul'nikov, A. F. et al. Volmer–Weber and Stranski–Krastanov InAs -(Al, Ga)As quantum dots emitting at 1.3 μm. J. Appl. Phys. 88 , 6272–6275 (2000)..

Takehana, K. et al. Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layers. J. Cryst. Growth 251 , 115–160 (2003)..

Tsatsul'nikov, A. F. et al. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots. Semiconductors 34 , 323–326 (2000)..

Kim, J. S. Self-assembled InAs quantum dots with two different matrix materials. J. Cryst. Growth 290 , 384–387 (2006)..

Oh, J. W. et al. Bimodal luminescence behavior of spatially-ordered seven-stacked InAs/InAlGaAs quantum dots. Thin Solid Films 541 , 68–71 (2013)..

Eales, T. D. et al. Quantifying Auger recombination coefficients in type-Ⅰ mid-infrared InGaAsSb quantum well lasers. J. Phys. D Appl. Phys. 54 , 055105 (2021)..

Grillot, F., Poletti, T. & Pes, S. Progress in mid-infrared optoelectronics for high-speed free-space data throughput. APL Photonics 10 , 010905 (2025)..

Takino, Y. et al. Regrowth interface quality dependence on thermal cleaning of AlGaInAs/InP buried-heterostructure lasers. Jpn. J. Appl. Phys. 50 , 070203 (2011)..

Xue, Y. et al. 1.55 μm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon. Opt. Express 28 , 18172–18179 (2020)..

Bhowmick, S. et al. High performance InAs/In 0.53 Ga 0.23 Al 0.24 As/InP quantum dot 1.55 μ m tunnel injection laser. IEEE J. Quantum Electron. 50 , 7–14 (2014)..

Wang, J. S., Lin, H. H. & Sung, L. W. Room-temperature 2.2- μ m InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy. IEEE J. Quantum Electron. 34 , 1959–1962 (1998)..

Mitsuhara, M. et al. 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power. IEEE Photonics Technol. Lett. 11 , 33–35 (1999)..

Kuang, G. K. et al. 2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy. Appl. Phys. Lett. 77 , 1091–1092 (2000)..

Serries, D. et al. Improved performance of 2-μm GaInAs strained quantum-well lasers on InP by increasing carrier confinement. IEEE Photonics Technol. Lett. 13 , 412–414 (2001)..

Rotter, T. J., Stintz, A. & Malloy, K. J. InP based quantum dash lasers with 2µm wavelength. IEE Proc. -Optoelectron. 150 , 318–321 (2003)..

Sato, T. et al. Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1 μ m by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 87 , 211903 (2005)..

Sato, T. et al. 2.1- μ m-wavelength InGaAs multiple-quantum-well distributed feedback lasers grown by MOVPE using Sb surfactant. IEEE J. Sel. Top. Quantum Electron. 13 , 1079–1083 (2007)..

Sato, T. et al. 2.33- μ m-wavelength distributed feedback lasers with InAs–In 0.53 Ga 0.47 As multiple-quantum wells on InP substrates. IEEE Photonics Technol. Lett. 20 , 1045–1047 (2008)..

Sato, T. et al. Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantu m well structures on InP substrates. IEEE J. Sel. Top. Quantum Electron. 14 , 992–997 (2008)..

Zeller, W. et al. Singlemode emission at 2µm wavelength with InP based quantum dash DFB lasers. Electron. Lett. 44 , 354–356 (2008)..

Sato, T., Mitsuhara, M. & Kondo, Y. InAs quantum-well distributed feedback lasers emitting at 2.3 μm for gas sensing applications. NTT Tech. Rev. 7 , 9–15 (2009)..

Cao, Y. Y. et al. Improved performance of 2.2- μ m InAs/InGaAs QW lasers on InP by using triangular wells. IEEE Photonics Technol. Lett. 26 , 571–574 (2014)..

Papatryfonos, K. et al. Quantum dash based lasers for gas sensing. In Proc. 26th International Conference on Indium Phosphide and Related Materials (IPRM) . 1–2 (Montpellier, France, IEEE, 2014).

Gu, Y. et al. Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4µm. J. Cryst. Growth 425 , 376–380 (2015)..

Luo, S. et al. High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epit axy. Opt. Express 23 , 8383–8388 (2015)..

Ji, W. Y. et al. InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant. Appl. Opt. 56 , H10–H14 (2017)..

Papatryfonos, K. et al. Laterally coupled distributed feedback lasers emitting at 2 μ m with quantum dash active region and high-duty-cycle etched semiconductor gratings. J. Appl. Phys. 121 , 053101 (2017)..

Chu, R. J. et al. Low-threshold 2µm InAs/InP quantum dash lasers enabled by punctuated growth. Opt. Express 32 , 1334–1341 (2024)..

Abdollahinia, A. et al. Temperature stability of static and dynamic properties of 1.55 μm quantum dot lasers. Opt. Express 26 , 6056–6066 (2018)..

Park, J. S. et al. High operating temperature ( > 200 ℃) InAs/GaAs quantum-dot laser with co-doping technique. J. Phys. D Appl. Phys. 58 , 185101 (2025)..

Shang, C. et al. High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters. Optica 8 , 749–754 (2021)..

Jones, L. et al. Smart Align—a new tool for robust non-rigid registration of scanning microscope data. Adv. Struct. Chem. Imaging 1 , 8 (2015)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据