High efficiency, high color purity red micro-light-emitting diodes

Yuanpeng Wu; Yixin Xiao; Maddaka Reddeppa; Yakshita Malhotra; Yifu Guo; Jianyang Xiao; Jiangnan Liu; Danhao Wang; Kai Sun; Zetian Mi

doi:10.1038/s41377-026-02227-3

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High efficiency, high color purity red micro-light-emitting diodes

Original Articles

- High efficiency, high color purity red micro-light-emitting diodes
- High efficiency, high color purity red micro-light-emitting diodes
- Light: Science & Applications 2026年15卷第5期页码：1532-1540
- Affiliations：
  
  1.Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
  2.Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA
- Author bio：
  
  Yuanpeng Wu (ypwu@umich.edu)
  Zetian Mi (ztmi@umich.edu)
- Funds：
- DOI：10.1038/s41377-026-02227-3
  中图分类号：
- 收稿：2025-05-26，
  
  修回：2026-01-23，
  
  录用：2026-02-04，
  
  网络首发：2026-02-28，
  
  纸质出版：2026-05-31
- Accepted：
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Yuanpeng Wu, Yixin Xiao, Maddaka Reddeppa, 等. High efficiency, high color purity red micro-light-emitting diodes[J]. Light: Science & Applications, 2026,15(5):1532-1540.

Wu, Y. P. et al. High efficiency, high color purity red micro-light-emitting diodes. Light: Science & Applications, 15, 1532-1540 (2026).
Yuanpeng Wu, Yixin Xiao, Maddaka Reddeppa, 等. High efficiency, high color purity red micro-light-emitting diodes[J]. Light: Science & Applications, 2026,15(5):1532-1540. DOI： 10.1038/s41377-026-02227-3.

Wu, Y. P. et al. High efficiency, high color purity red micro-light-emitting diodes. Light: Science & Applications, 15, 1532-1540 (2026). DOI： 10.1038/s41377-026-02227-3.

摘要

Abstract

InGaN-based micro-light-emitting diodes (micro-LEDs) are emerging to revolutionize the display and lighting technologies

particularly for their excellent robustness

high brightness

high efficiency and small pixel size. Despite the success of blue LEDs

long-wavelength emission

particularly the red emission

has been a challenge for InGaN-based micro-LEDs. Overcoming the low quantum efficiency

color instability

and broad emission in the red wavelength regime are among the most urgent and critical problems that inhibit the commercial implementation of micro-LED technology. In this work

we utilize a nanowire photonic crystal (PhC) structure to reform the radiation behavior of red-emitting InGaN micro-LEDs. Through detailed optimization on the PhC design and device fabrication

we demonstrate red-emitting micro-LEDs with a peak wavelength at 617 nm and a full-width-at-half-maximum (FWHM) of 5 nm

which is about one order of magnitude narrower than previous reported values and is paramount for achieving high color purity. The chromaticity property is highly stable with varying injection currents due to the coupling of emission to photonic band edge mode. A high external quantum efficiency of over 10% was measured from micro-LEDs with a size of 1 µm

. This work provides a vital strategy for high-performance red-emitting micro-LEDs and a potential pathway for full-color micro-LED technology by using all Ⅲ-nitride semiconductors.

关键词

Keywords

references

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